Patents by Inventor Tom K. Cho

Tom K. Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7425716
    Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: September 16, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Alexandros T. Demos, Khaled A. Elsheref, Yuri Trachuk, Tom K. Cho, Girish A. Dixit, Hichem M'Saad, Derek Witty
  • Patent number: 7354501
    Abstract: The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: April 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Tom K. Cho, Rolf Guenther, Steve H. Kim, Mehrdad Moshfegh, Shigeru Takehiro, Thomas Kring, Tetsuya Ishikawa
  • Patent number: 7279049
    Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.
    Type: Grant
    Filed: February 5, 2004
    Date of Patent: October 9, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Andrzej Kaszuba, Sophia M. Velastegui, Visweswaren Sivaramakrishnan, Pyongwon Yim, Mario David Silvetti, Tom K. Cho, Indrajit Lahiri, Surinder S. Bedi
  • Patent number: 7141138
    Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
    Type: Grant
    Filed: July 28, 2003
    Date of Patent: November 28, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
  • Patent number: 7074298
    Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: July 11, 2006
    Assignee: Applied Materials
    Inventors: Sudhir Gondhalekar, Tom K. Cho, Rolf Guenther, Shigeru Takehiro, Masayoshi Nohira, Tetsuya Ishikawa, Ndanka O. Mukuti
  • Publication number: 20040231798
    Abstract: A replaceable gas nozzle is insertable in a gas distributor ring of a substrate processing chamber and that can be shielded within the chamber. The replaceable gas nozzle has a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber. The ceramic body includes a first external thread to mate with the gas distributor ring, and a second external thread to receive a heat shield. The channel has an inlet to receive the gas from the gas distributor ring and a pinhole outlet to release the gas into the chamber. A heat shield can be used to shield the nozzle extending into the chamber. The heat shield has a hollow member configured to be coupled with the nozzle that has an internal dimension sufficiently large to be disposed around at least a portion of the nozzle. The hollow member also has an extension which projects distally of the outlet of the nozzle and a heat shield opening for the process gas to flow therethrough from the nozzle outlet.
    Type: Application
    Filed: April 16, 2004
    Publication date: November 25, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
  • Publication number: 20040126952
    Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
    Type: Application
    Filed: July 28, 2003
    Publication date: July 1, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
  • Publication number: 20030213562
    Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. This allows higher source power plasma to be generated and facilitates gapfill for extremely small geometries. The dome design improves the uniformity of the plasma distribution over the substrate to be processed. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Sudhir Gondhalekar, Tom K. Cho, Rolf Guenther, Shigeru Takehiro, Masayoshi Nohira, Tetsuya Ishikawa, Ndanka O. Mukuti
  • Publication number: 20030213434
    Abstract: The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Sudhir Gondhalekar, Tom K. Cho, Rolf Guenther, Steve H. Kim, Mehrdad Moshfegh, Shigeru Takehiro, Thomas Kring, Tetsuya Ishikawa
  • Patent number: 6450117
    Abstract: A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: September 17, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Laxman Murugesh, Padmanaban Krishnaraj, Michael Cox, Canfeng Lai, Narendra Dubey, Tom K. Cho, Sudhir Ram Gondhalekar, Lily L. Pang