Patents by Inventor Tomofumi Takano

Tomofumi Takano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10692714
    Abstract: A method for cleaning a semiconductor wafer by using a chemical tank containing an SC-2 solution including, a plurality of the chemical tanks are used, and among SC-2 solutions contained in the plurality of chemical tanks, an HCl concentration in an SC-2 solution contained in a chemical tank to be finally used is lowered to the lowest to clean the semiconductor wafer. The method for cleaning a semiconductor wafer thus provided can improve the particle level in SC-2 cleaning for a semiconductor wafer without degrading the metal impurity level on the semiconductor wafer surface.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: June 23, 2020
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Susumu Sarashina, Tomofumi Takano
  • Publication number: 20190066999
    Abstract: A method for cleaning a semiconductor wafer by using a chemical tank containing an SC-2 solution including, a plurality of the chemical tanks are used, and among SC-2 solutions contained in the plurality of chemical tanks, an HCl concentration in an SC-2 solution contained in a chemical tank to be finally used is lowered to the lowest to clean the semiconductor wafer. The method for cleaning a semiconductor wafer thus provided can improve the particle level in SC-2 cleaning for a semiconductor wafer without degrading the metal impurity level on the semiconductor wafer surface.
    Type: Application
    Filed: February 22, 2017
    Publication date: February 28, 2019
    Applicant: Shin-Etsu Handotai Co., Ltd.
    Inventors: Susumu SARASHINA, Tomofumi TAKANO
  • Patent number: 9905411
    Abstract: Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface side, a chamfered surface on the back surface side, and an end face at a peripheral end, including: mirror-polishing of each portion of the chamfered surface on the front surface side, the chamfered surface on the back surface side, the end face, and an outermost peripheral-portion on the front or back surface adjacent to the chamfered surface; wherein the end face mirror-polishing and mirror-polishing of the outermost peripheral-portion on the front or back surface are performed in one step, after step of mirror-polishing the chamfered surface on the front surface side and step of mirror-polishing the chamfered surface on the back surface side; roll-off amount of the outermost peripheral-portion on the front or back surface is adjusted by one step-performed mirror-polishing of the end face and outermost peripheral-portion.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: February 27, 2018
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Yuki Miyazawa, Takahiro Kida, Tomofumi Takano
  • Publication number: 20170301533
    Abstract: Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface side, a chamfered surface on the back surface side, and an end face at a peripheral end, including: mirror-polishing of each portion of the chamfered surface on the front surface side, the chamfered surface on the back surface side, the end face, and an outermost peripheral-portion on the front or back surface adjacent to the chamfered surface; wherein the end face mirror-polishing and mirror-polishing of the outermost peripheral-portion on the front or back surface are performed in one step, after step of mirror-polishing the chamfered surface on the front surface side and step of mirror-polishing the chamfered surface on the back surface side; roll-off amount of the outermost peripheral-portion on the front or back surface is adjusted by one step-performed mirror-polishing of the end face and outermost peripheral-portion.
    Type: Application
    Filed: August 19, 2015
    Publication date: October 19, 2017
    Applicant: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Yuki MIYAZAWA, Takahiro KIDA, Tomofumi TAKANO
  • Publication number: 20080125016
    Abstract: The present invention is a method for producing a polishing agent in which silica particles are dispersed in an aqueous solution, comprising at least a step of removing metal compound ions from a prepared silica sol by ion exchange (B); a step of purifying further the ion-exchanged silica sol (D); a step of adding alkali metal hydroxide to the purified silica sol (F); and a step of adding an acid to the silica sol to which the alkali metal hydroxide is added (G). There is provided a method for producing a polishing agent which can extremely effectively suppress metal contamination when a silicon wafer or the like is polished can be produced.
    Type: Application
    Filed: November 25, 2005
    Publication date: May 29, 2008
    Applicant: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Mikio Nakamura, Takahiro Kida, Tomofumi Takano, Toshihiko Imai, Masaaki Ohshima