Patents by Inventor Tomohiro KAMIYANAGI

Tomohiro KAMIYANAGI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical detection element and solid-state image pickup device
    Patent number: 9923006
    Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: March 20, 2018
    Assignees: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Takashi Watanabe, Tomohiro Kamiyanagi, Kunihiko Tsuchiya, Tomoaki Takeuchi
  • OPTICAL DETECTION ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE
    Publication number: 20170133419
    Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.
    Type: Application
    Filed: January 23, 2017
    Publication date: May 11, 2017
    Applicants: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Takashi WATANABE, Tomohiro KAMIYANAGI, Kunihiko TSUCHIYA, Tomoaki TAKEUCHI