Patents by Inventor Tomohiro Oda
Tomohiro Oda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240110262Abstract: There is provided an Al wiring material which can achieve sufficient bond reliability of bonded parts in a high-temperature environment at the time when a semiconductor device operates. The Al wiring material containing one or more of Pd and Pt so as to satisfy 3?x1a?90 or 10?x1b?250, and 3?(x1a+x1b)?300, where x1a and x1b are respectively a content of Pd [mass ppm] and a content of Pt [mass ppm], with the balance comprising Al, and an average crystal grain diameter on a cross-section perpendicular to a longitudinal direction of the Al wiring material is 3 to 35 ?m.Type: ApplicationFiled: January 31, 2022Publication date: April 4, 2024Inventors: Tomohiro UNO, Yuya SUTO, Tetsuya OYAMADA, Daizo ODA, Yuto KURIHARA, Motoki ETO
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Publication number: 20240105668Abstract: There is provided a novel Al wiring material that achieves both of a suppression of chip damage and a thermal shock resistance. In aspect 1, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2?H1h/H1s where H1h is a Vickers hardness of the Al core material (Hv) and H1s is a Vickers hardness of the Al coating layer (Hv). In aspect 2, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2?H2h/H2s where H2s is a Vickers hardness of the Al core material (Hv) and H2h is a Vickers hardness of the Al coating layer (Hv).Type: ApplicationFiled: January 31, 2022Publication date: March 28, 2024Inventors: Yuto KURIHARA, Daizo ODA, Motoki ETO, Ryo OISHI, Tetsuya OYAMADA, Tomohiro UNO
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Publication number: 20240066047Abstract: The present disclosure provides a compound having a STING agonistic activity, which may be expected to be useful as an agent for the prophylaxis or treatment of STING-related diseases. The present disclosure relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.Type: ApplicationFiled: May 1, 2023Publication date: February 29, 2024Inventors: MASATO YOSHIKAWA, MORIHISA SAITOH, TAISUKE KATO, YAYOI NAKAYAMA, TOMOHIRO SEKI, YASUO NAKAGAWA, YUSUKE TOMINARI, MASAKI SETO, YUSUKE SASAKI, MASANORI OKANIWA, TSUNEO ODA, AKITO SHIBUYA, KOSUKE HIDAKA, ZENYU SHIOKAWA, SHUMPEI MURATA, ATSUTOSHI OKABE, YOSHIHISA NAKADA, MICHIYO MOCHIZUKI, BRIAN SCOTT FREEZE, TAISUKE TAWARAISHI, YASUFUMI WADA, PAUL D. GREENSPAN
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Publication number: 20240071978Abstract: To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, in which, as a result of measuring a crystal orientation on a cross section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a <100> crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.Type: ApplicationFiled: January 31, 2022Publication date: February 29, 2024Inventors: Yuya SUTO, Tomohiro UNO, Tetsuya OYAMADA, Daizo ODA, Motoki ETO, Yuto KURIHARA
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Patent number: 11880138Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.Type: GrantFiled: February 1, 2021Date of Patent: January 23, 2024Assignee: JSR CORPORATIONInventors: Shin-ya Nakafuji, Hiroki Nakatsu, Tomoaki Taniguchi, Tomohiro Oda
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Patent number: 11705331Abstract: A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.Type: GrantFiled: January 14, 2021Date of Patent: July 18, 2023Assignee: JSR CORPORATIONInventors: Hiroyuki Komatsu, Tomohiro Oda, Hitoshi Osaki, Masafumi Hori, Takehiko Naruoka
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Patent number: 11460767Abstract: A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.Type: GrantFiled: January 4, 2019Date of Patent: October 4, 2022Assignee: JSR CORPORATIONInventors: Hiroyuki Komatsu, Tomohiro Oda, Hitoshi Osaki, Masafumi Hori, Takehiko Naruoka
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Patent number: 11370872Abstract: A composition for pattern formation includes a first polymer, a second polymer and a solvent. The first polymer includes: a first block including a first structural unit derived from a substituted or unsubstituted styrene; and a second block including a second structural unit other than the first structural unit. The second polymer includes: the first structural unit; and a group bonding to at least one end of a main chain thereof and including a polar group. The polar group is preferably a hydroxy group or a carboxyl group. A number average molecular weight of the second polymer is preferably no greater than 6,000. A mass ratio of the second polymer to the first polymer is preferably no less than 0.15 and no greater than 0.4. The solvent preferably comprises a compound comprising a hydroxyl group and an alkyl ester group.Type: GrantFiled: January 4, 2019Date of Patent: June 28, 2022Assignee: JSR CorporationInventors: Masafumi Hori, Hiroyuki Komatsu, Tomohiro Oda, Hitoshi Osaki, Takehiko Naruoka
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Patent number: 11335559Abstract: A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle ? (°) of water on the sidewall of the pattern satisfies inequality (1).Type: GrantFiled: July 28, 2020Date of Patent: May 17, 2022Assignee: JSR CORPORATIONInventors: Hiroyuki Komatsu, Tomohiro Oda, Masafumi Hori, Takehiko Naruoka, Tomoki Nagai
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Patent number: 11211246Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.Type: GrantFiled: February 28, 2019Date of Patent: December 28, 2021Assignee: JSR CORPORATIONInventors: Hiroyuki Komatsu, Tomohiro Oda, Hitoshi Osaki, Masafumi Hori, Takehiko Naruoka
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Publication number: 20210166935Abstract: A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.Type: ApplicationFiled: January 14, 2021Publication date: June 3, 2021Applicant: JSR CORPORATIONInventors: Hiroyuki KOMATSU, Tomohiro ODA, Hitoshi OSAKI, Masafumi HORI, Takehiko NARUOKA
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Publication number: 20210157235Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.Type: ApplicationFiled: February 1, 2021Publication date: May 27, 2021Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Hiroki NAKATSU, Tomoaki TANIGUCHI, Tomohiro ODA
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Patent number: 10950438Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including a metal. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the metal. It is preferred that the base material further includes a second region comprising substantially only a non-metal, and the method further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film. The metal is preferably a constituent of a metal substance, an alloy, an oxide, an electrically conductive nitride or a silicide.Type: GrantFiled: February 28, 2019Date of Patent: March 16, 2021Assignee: JSR CORPORATIONInventors: Hiroyuki Komatsu, Tomohiro Oda, Hitoshi Osaki, Masafumi Hori, Takehiko Naruoka
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Patent number: 10911466Abstract: A network protection device includes a packet capture unit which captures a network packet through an intelligent switch which performs connection in a communication network or across communication networks; a network analyzer which detects a threat in the network packet; a threat remover which removes the threat in the network packet; and a switch operator which changes from a first communication path, which connects a sender node to a receiver node without the threat remover, to a second communication path, which is different from the first communication path and connects the sender node to the receiver node through the threat remover when the threat is detected in the threat detector.Type: GrantFiled: November 28, 2018Date of Patent: February 2, 2021Assignee: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICAInventors: Naoki Ochi, Takuji Hiramoto, Tomohiro Oda, Tatsumi Oba
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Publication number: 20200357633Abstract: A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle ? (°) of water on the sidewall of the pattern satisfies inequality (1).Type: ApplicationFiled: July 28, 2020Publication date: November 12, 2020Applicant: JSR CORPORATIONInventors: Hiroyuki KOMATSU, Tomohiro ODA, Masafumi HORI, Takehiko NARUOKA, Tomoki NAGAI
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Patent number: 10768610Abstract: An integration server manages production in a manufacturing line that includes a first stage and a second stage carried out after the first stage. The integration server includes a communicator that acquires a first production log and a second production log. The first production log includes a first production count of processing objects in the first stage. The second production log includes the number of processing objects in the second stage. The integration server also includes an irregularity detector that detects the presence of irregularity in the first production log and the second production log on the basis of the first production count and the number of the processing objects in the second stage.Type: GrantFiled: October 23, 2018Date of Patent: September 8, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICAInventors: Yuji Unagami, Takuji Hiramoto, Tatsumi Oba, Tomohiro Oda, Naoki Ochi
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Patent number: 10691019Abstract: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.Type: GrantFiled: April 5, 2019Date of Patent: June 23, 2020Assignee: JSR CORPORATIONInventors: Hiroyuki Komatsu, Takehiko Naruoka, Masafumi Hori, Hitoshi Osaki, Tomohiro Oda
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Publication number: 20190235386Abstract: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.Type: ApplicationFiled: April 5, 2019Publication date: August 1, 2019Applicant: JSR CorporationInventors: Hiroyuki Komatsu, Takehiko Naruoka, Masafumi Hori, Hitoshi Osaki, Tomohiro Oda
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Publication number: 20190233561Abstract: A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.Type: ApplicationFiled: January 4, 2019Publication date: August 1, 2019Applicant: JSR CORPORATIONInventors: Hiroyuki KOMATSU, Tomohiro Oda, Hitoshi Osaki, Masafumi Hori, Takehiko Naruoka
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Publication number: 20190198316Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including a metal. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the metal. It is preferred that the base material further includes a second region comprising substantially only a non-metal, and the method further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film. The metal is preferably a constituent of a metal substance, an alloy, an oxide, an electrically conductive nitride or a silicide.Type: ApplicationFiled: February 28, 2019Publication date: June 27, 2019Applicant: JSR CORPORATIONInventors: Hiroyuki KOMATSU, Tomohiro ODA, Hitoshi OSAKI, Masafumi HORI, Takehiko NARUOKA