Abstract: To provide a plasma processing device, a plasma processing method and a method of manufacturing electronic devices capable of performing high-speed processing as well as using the plasma stably. In an inductively-coupled plasma torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. A discharge suppression gas is introduced into a space between the inductively-coupled plasma torch unit and the substrate inside the chamber through a discharge suppression gas supply hole, thereby generating long plasma stably.

Abstract: To provide a plasma processing device and a plasma processing method capable of generating plasma stably and efficiently and processing the entire desired treated region of a substrate efficiently for a short period of time.

Abstract: In an inductively coupled plasma torch unit, two coils, a first ceramic block, and a second ceramic block are arranged, and an annular chamber is provided. Plasma generated in the chamber is ejected toward a substrate through an opening in the chamber. The chamber and the substrate are caused to relatively move having an orientation perpendicular to a longitudinal direction of the opening, thereby processing the substrate. A shield cylinder is disposed around the coil inside a rotating cylindrical ceramic tube, thereby making it possible to achieve compatibility of ignitibility and shielding properties.

Abstract: The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil.

Abstract: In an inductively coupled plasma torch unit, two coils, a first ceramic block, and a second ceramic block are arranged, and an annular chamber is provided. Plasma generated in the chamber is ejected toward a substrate through an opening in the chamber. The chamber and the substrate are caused to relatively move having an orientation perpendicular to a longitudinal direction of the opening, thereby processing the substrate. A shield cylinder is disposed around the coil inside a rotating cylindrical ceramic tube, thereby making it possible to achieve compatibility of ignitibility and shielding properties.

Abstract: A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame.

Abstract: Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

Abstract: A plasma processing apparatus has a long chamber having an opening portion, a gas supply apparatus that supplies gas into the chamber, a spiral coil having a long shape in parallel with the longitudinal direction of the chamber, a high-frequency electric power supply connected to the spiral coil, a base material mounting table which is disposed opposite to the opening portion and holds a base material and a moving mechanism which is disposed in parallel with the longitudinal direction of the chamber and the longitudinal direction of the opening portion, and enables the chamber and the base material mounting table to relatively move perpendicularly with respect to the longitudinal direction of the opening portion.

Abstract: In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged, parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing.

Abstract: A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame.

Abstract: A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes a process chamber; a process gas supply unit that supplies process gas to the process chamber; a decompressing mechanism that decompresses the process chamber; a plasma excitation device that generates plasma in the process chamber; a stage in the chamber, on which the transport carrier is loaded; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and that has a window section through which the substrate is partly exposed to plasma; a correction member that presses the frame onto the stage and corrects warpage of the frame; and a movement device that moves the correction member. The correction member is provided separately from the cover to be covered by the cover.

Abstract: In a semiconductor manufacturing method for performing thermal treatment of a substrate with plasma while moving the substrate on which devices are formed relatively to a plasma generating apparatus which generates the plasma by allowing electromagnetic fields to act on a plasma gas, a second surface of the substrate is irradiated with the plasma of the plasma generating apparatus in a state where the second surface of the substrate which is the opposite side of a first surface of the substrate on which the devices are formed faces the plasma generating apparatus.

Abstract: In a semiconductor manufacturing method for performing thermal treatment of a substrate with plasma while moving the substrate on which devices are formed relatively to a plasma generating apparatus which generates the plasma by allowing electromagnetic fields to act on a plasma gas, a second surface of the substrate is irradiated with the plasma of the plasma generating apparatus in a state where the second surface of the substrate which is the opposite side of a first surface of the substrate on which the devices are formed faces the plasma generating apparatus.

Abstract: To provide a plasma processing device and a plasma processing method capable of generating plasma stably and efficiently and processing the entire desired treated region of a substrate efficiently for a short period of time.

Abstract: Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.

Abstract: In A plasma processing device and method is capable of efficiently generating long thermal plasma with good uniformity as well as suppressing electrostatic discharge damage, a substrate on which a thin film is formed is arranged so as to face an inductively-coupled plasma torch unit. Coils are arranged in the vicinity of a first ceramic block and a second ceramic block of the torch unit. A shielding plate in the torch unit effectively shields high-frequency electromagnetic fields generated by the coils to drastically reduce the high-frequency electromagnetic fields in the vicinity of the substrate. Therefore, electrostatic discharge damage hardly occurs.

Abstract: To provide a plasma processing device and a plasma processing method capable of performing high-speed processing. In an inductively-coupled plasma torch unit, a coil, a lid and a first ceramic block are bonded together, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. The first ceramic block is cooled efficiently by allowing a refrigerant to flow in a refrigerant flow path.

Abstract: To provide a plasma processing device, a plasma processing method and a method of manufacturing electronic devices capable of performing high-speed processing as well as using the plasma stably. In an inductively-coupled plasma torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. A discharge suppression gas is introduced into a space between the inductively-coupled plasma torch unit and the substrate inside the chamber through a discharge suppression gas supply hole, thereby generating long plasma stably.

Abstract: The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil.

Abstract: The present invention provides a stable gel composition for mycosis treatment, with increased absorption and permeation of (2R,3R)-2-(2,4-difluorophenyl)-3-(4-methylenepiperidin -1-yl)-1-(1H-1,2,4-triazol-1-yl)-butan-2-ol into a target site (skin and nail). The gel composition for mycosis treatment, comprises (2R,3R)-2-(2,4-difluorophenyl)-3-(4-methylenepiperidin-1-yl) -1-(1H-1,2,4-triazol-1-yl)-butan-2-ol or an acid addition salt thereof, a lower alcohol, a polyhydric alcohol and a gel-forming polymer. The gel composition of the present invention increases permeation of the above compound into a target site and into the nail. The gel composition of the present invention allows the drug to be directly and rapidly absorbed and permeated into a target site in a constant manner, for mycosis treatment, particularly onychomycosis treatment.