Patents by Inventor Tomohiro Yoshida

Tomohiro Yoshida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11022224
    Abstract: A valve device includes a valve body that defines flow paths, a diaphragm provided so as to be capable of opening and closing the flow paths, an operation member provided so as to be capable of moving in opening and closing directions that open and close the flow paths by operating the diaphragm, a main actuator that applies a driving force corresponding to an operating pressure applied in the opening direction or the closing direction of the opening and closing directions with respect to the operation member, a switching mechanism capable of selectively switching a position of the operation member that regulates a degree of opening of the flow paths between a first open position and a second open position in accordance with a magnitude of the operating pressure, and regulating mechanisms capable of independently regulating the first open position and the second open position.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: June 1, 2021
    Assignee: FUJIKIN INCORPORATED
    Inventors: Toshihide Yoshida, Tomohiro Nakata, Tsutomu Shinohara, Toshiyuki Inada, Takashi Funakoshi, Hidenobu Sato, Tomoko Yuhara
  • Publication number: 20210108371
    Abstract: A method for producing a paper, which includes applying at least one of ionizing radiation and plasma to at least one of a paper base and a compound (A) selected from: a compound having a carbon-carbon unsaturated bond and containing no fluorine atom in a molecular structure, and a compound containing no fluorine atom in a molecular structure in which radicals are generated by irradiation of an electron beam to the compound, to introduce a layer formed from the compound (A) on a surface of the paper base.
    Type: Application
    Filed: December 23, 2020
    Publication date: April 15, 2021
    Applicants: OSAKA UNIVERSITY, DAIKIN INDUSTRIES, LTD.
    Inventors: Akihiro OSHIMA, Yoshikage OHMUKAI, Yuko SHIOTANI, Kazuyuki SATOU, Michio MATSUDA, Tomohiro YOSHIDA, Ikuo YAMAMOTO
  • Patent number: 10969019
    Abstract: Provided is a fluid control device that achieves high sealing performance at full closure, and can suppress damage to a valve body or a valve seat surface even without mechanical accuracy improvements. The fluid control device includes: a fluid control valve provided in a flow path through which fluid flows: and a control mechanism that controls the fluid control valve. The fluid control valve includes: a valve seat surface; a valve body that contacts and separates from the valve seat surface; and an actuator that drives the valve body. Further, the control mechanism includes a speed adjustment part that when the valve body is brought close to the valve seat surface in order to fully close the fluid control valve, and the valve seat surface and the valve body reach a predetermined distance apart, reduces the moving speed of the valve body more than before reaching the predetermined distance.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: April 6, 2021
    Assignee: HORIBA STEC, Co., Ltd.
    Inventors: Tadahiro Yasuda, Thomas Hoke, Ryan Owens, Maximilian Gundlach, Patrick Lowery, John Dick, Tomohiro Yoshida
  • Patent number: 10876322
    Abstract: The locking device includes a key having a cylindrical shaft in which a guide groove is formed in the axial direction, and a cylinder lock which includes an outer cylinder, an inner cylinder, a locking bar and a tumbler, the inner cylinder has an inner cylinder main body rotatably accommodated in the outer cylinder, a rod fixed to the inner cylinder main body, and a key insertion slot, the locking bar is interposed between the inner cylinder main body and the outer cylinder and prevents the rotation of the inner cylinder by engaging and disengagingly locking the inner cylinder main body and the outer cylinder, and the tumbler has a guide convex portion engageably and detachably engaged with the key groove, and an inner concave portion rotatably received in the inner cylinder and dropping the locking bar.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: December 29, 2020
    Assignee: Travel Sentry SaRL
    Inventor: Tomohiro Yoshida
  • Patent number: 10781222
    Abstract: A surface-treating agent including at least one perfluoro(poly)ether group containing silane compound of the formula (1): wherein each of symbols is as defined herein, wherein a number average molecular weight of the perfluoro(poly)ether group containing silane compound is 3000 or more and 6000 or less, and wherein 80 mol % or more of the perfluoro(poly)ether group containing silane compound contained in the surface-treating agent is a compound wherein g is 2 or more.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: September 22, 2020
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Kenichi Katsukawa, Hisashi Mitsuhashi, Tomohiro Yoshida, Masatoshi Nose, Takashi Namikawa
  • Patent number: 10703932
    Abstract: A surface-treating agent including at least one perfluoro(poly)ether group containing silane compound of the formula (1): wherein Rf, PFPE, Z, Q, R1, R2, X, Y, e, f, g, h and n are as defined herein. Also disclosed is a process for preparing the compound of formula (1).
    Type: Grant
    Filed: December 25, 2014
    Date of Patent: July 7, 2020
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Kenichi Katsukawa, Hisashi Mitsuhashi, Kensuke Mohara, Tomohiro Yoshida, Masatoshi Nose, Takashi Namikawa
  • Patent number: 10705546
    Abstract: In order to provide a flow rate control apparatus capable of reducing noise while reducing delay, the flow rate control apparatus includes: a fluid resistor provided in a flow path; a downstream valve provided downstream of the fluid resistor; and a downstream pressure sensor provided between the fluid resistor and the downstream valve. The apparatus calculates a resistor flow rate through the fluid resistor; the time change amount of the downstream pressure; on the basis of the resistor flow rate, the difference between the resistor flow rate and the time change amount of the downstream side pressure, and a weighting factor, calculates a weighted average to estimate a valve flow rate through the downstream valve; and, on the basis of the deviation between a set flow rate and the valve flow rate, controls the downstream side valve, in which the weighting factor is configured to be changeable.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: July 7, 2020
    Assignee: HORIBA STEC, Co., Ltd.
    Inventors: Tsai Wei Tseng, Tomohiro Yoshida, Kentaro Nagai
  • Publication number: 20200188813
    Abstract: An ion exchanger includes a case and a cartridge. The case has an opening open upward. The cartridge is detachably attached to the case through the opening and includes a circumferential wall, a top wall, a lower opening, and a porous body. The cartridge accommodates an ion exchange resin. The porous body closes the lower opening of the cartridge and allows coolant to pass through while not allowing the ion exchange resin to pass through. A discharge hole that allows air inside the cartridge to be discharged out of the cartridge is formed in at least one of the top wall of the cartridge or a portion of the circumferential wall of the cartridge that is opposed to the inner circumferential surface of the case body.
    Type: Application
    Filed: December 2, 2019
    Publication date: June 18, 2020
    Applicant: TOYOTA BOSHOKU KABUSHIKI KAISHA
    Inventors: Shingo YABE, Tomohiro YOSHIDA
  • Patent number: 10665464
    Abstract: A process of forming a field effect transistor is disclosed. The process includes steps of depositing a first silicon nitride (SiN) film on a semiconductor layer by a low pressure chemical vapor deposition (LPCVD) technique; depositing a second SiN film on the first SiN film by plasma assisted chemical vapor deposition (p-CVD) technique; preparing a photoresist mask on the second SiN film, the photoresist mask having an opening in a position corresponding to the gate electrode; dry-etching the second SiN film and the first SiN film continuously in a portion of the opening in the photoresist mask to form an opening in the first SiN film and an opening in the second SiN film, the openings in the first and second SiN films exposing the semiconductor layer; and filling at least the opening in the first SiN film by the gate electrode. A feature of the process is that the opening in the first SiN film has an inclined side against the semiconductor layer and gradually widens from the semiconductor layer.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: May 26, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Tomohiro Yoshida
  • Publication number: 20200142923
    Abstract: An inspection support system for a construction machine including a camera 416 and a display (monitor) 414 and acquiring image data of the construction machine provided in an inspection report includes a guidance display section 432 that displays a guidance image on the display 414, the guidance image showing a composition of a photographing object photographed as the image data, a photographing section 450 that acquires a photographic subject image photographed by the camera 416 as image data, and a transmitting section that transmits the image data acquired to a management server 300 that manages the inspection report.
    Type: Application
    Filed: September 29, 2017
    Publication date: May 7, 2020
    Inventors: Takami KUSAKI, Tomohiro YOSHIDA, Masutaka KUMASAKA, Kazuo FUJISHIMA, Satoshi INOSE
  • Patent number: 10625795
    Abstract: It is contemplated to arrange a plurality of operational levers without inviting complications of the arrangements or enlargement of the vehicle body, intensively for better operability between the driver's seat and one of the right and left rear fenders. In a riding work vehicle, a plurality of operational levers 25, 26 are disposed adjacent on the right and left sides between a driver's seat and one of right and left rear fenders 7. Of the plurality of operational levers 25, 26, an inner operational lever 25 disposed on the side of the driver's seat is displaceable in a front-rear direction of a vehicle body.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: April 21, 2020
    Assignee: Kubota Corporation
    Inventors: Tomohiro Yoshida, Ayaka Nakabayashi, Daisuke Tomimatsu, Koji Masumoto, Koji Kajino, Isamu Morimoto, Kyosuke Tanaka, Yoshiaki Niimoto, Hiroo Fujimoto, Masatoshi Watanabe, Shinji Kato, Yutaka Inubushi, Tatsuyuki Kashimoto
  • Patent number: 10553688
    Abstract: A transistor type of field effect transistor (FET) having a field plate is disclosed. The FET provides an active region and two inactive regions sandwiching the active region therebetween, where the electrodes are provided in the active region. The FET further includes fingers and buses of the drain and the source. The fingers overlap with the electrodes of the drain and the source; while the busses are provided in respective inactive regions. The field plate includes a field plate finger and a field plate interconnection. The field plate finger extends parallel to the gate electrode in a side facing the drain electrode. The field plate interconnection connects the field plate finger with the source interconnection in the inactive region opposite to the inactive region where the drain bus exists.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: February 4, 2020
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Chihoko Mizue, Tomohiro Yoshida
  • Publication number: 20200033896
    Abstract: In order to provide a flow rate control apparatus capable of reducing noise while reducing delay, the flow rate control apparatus includes: a fluid resistor provided in a flow path; a downstream valve provided downstream of the fluid resistor; and a downstream pressure sensor provided between the fluid resistor and the downstream valve. The apparatus calculates a resistor flow rate through the fluid resistor; the time change amount of the downstream pressure; on the basis of the resistor flow rate, the difference between the resistor flow rate and the time change amount of the downstream side pressure, and a weighting factor, calculates a weighted average to estimate a valve flow rate through the downstream valve; and, on the basis of the deviation between a set flow rate and the valve flow rate, controls the downstream side valve, in which the weighting factor is configured to be changeable.
    Type: Application
    Filed: July 24, 2019
    Publication date: January 30, 2020
    Inventors: Tsai Wei Tseng, Tomohiro Yoshida, Kentaro Nagai
  • Patent number: 10529574
    Abstract: A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an opening corresponding to the gate electrode on the insulating film; forming a recess in the insulating film using the photoresist as an etching mask, the recess leaving a rest portion in the insulating film; exposing the photoresist in oxygen plasma; baking the photoresist to make an edge of the opening thereof dull; etching the rest portion of the insulating film using the dulled photoresist as an etching mask; and forming the gate electrode so as to be in contact with the semiconductor layer through the opening in the insulating film.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: January 7, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Tomohiro Yoshida, Hiroyuki Ichikawa
  • Publication number: 20190301200
    Abstract: The locking device includes a key having a cylindrical shaft in which a guide groove is formed in the axial direction, and a cylinder lock which includes an outer cylinder, an inner cylinder, a locking bar and a tumbler, the inner cylinder has an inner cylinder main body rotatably accommodated in the outer cylinder, a rod fixed to the inner cylinder main body, and a key insertion slot, the locking bar is interposed between the inner cylinder main body and the outer cylinder and prevents the rotation of the inner cylinder by engaging and disengagingly locking the inner cylinder main body and the outer cylinder, and the tumbler has a guide convex portion engageably and detachably engaged with the key groove, and an inner concave portion rotatably received in the inner cylinder and dropping the locking bar.
    Type: Application
    Filed: April 28, 2017
    Publication date: October 3, 2019
    Applicant: Travel Sentry SaRL
    Inventor: Tomohiro YOSHIDA
  • Publication number: 20190244823
    Abstract: A process of forming a field effect transistor is disclosed. The process includes steps of depositing a first silicon nitride (SiN) film on a semiconductor layer by a low pressure chemical vapor deposition (LPCVD) technique; depositing a second SiN film on the first SiN film by plasma assisted chemical vapor deposition (p-CVD) technique; preparing a photoresist mask on the second SiN film, the photoresist mask having an opening in a position corresponding to the gate electrode; dry-etching the second SiN film and the first SiN film continuously in a portion of the opening in the photoresist mask to form an opening in the first SiN film and an opening in the second SiN film, the openings in the first and second SiN films exposing the semiconductor layer; and filling at least the opening in the first SiN film by the gate electrode. A feature of the process is that the opening in the first SiN film has an inclined side against the semiconductor layer and gradually widens from the semiconductor layer.
    Type: Application
    Filed: February 4, 2019
    Publication date: August 8, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Tomohiro Yoshida
  • Publication number: 20190196517
    Abstract: A calibration data generation apparatus includes a flow rate sensor that measures the flow rate of a fluid flowing through a fluid control valve; a differential pressure control mechanism; a temperature control mechanism; and a control unit that when the fluid passing has sound velocity, uses the temperature control mechanism to change the temperature from a reference temperature to comparative temperature. In addition, the control unit includes a valve opening control part that controls the fluid control valve so that at the comparative temperature, an output value outputted from one of the position sensor and the flow rate sensor becomes equal to the reference output value of the one; and a calibration data generation part that generates the calibration data on the basis of a calibration data generation output value outputted from the other one of the position sensor and the flow rate sensor.
    Type: Application
    Filed: December 26, 2018
    Publication date: June 27, 2019
    Inventors: Thomas Hoke, Patrick Lowery, Bill White, John Dick, Tadahiro Yasuda, Tomohiro Yoshida
  • Publication number: 20190181232
    Abstract: A transistor type of field effect transistor (FET) having a field plate is disclosed. The FET provides an active region and two inactive region sandwiching the active region therebetween, where the electrodes are provided in the active region. The FET further includes fingers and buses of the drain and the source. The fingers overlap with the electrodes of the drain and the source; while the busses are provided in respective inactive regions. The field plate includes a field plate finger and a field plate interconnection. The field plate finger extends parallel to the gate electrode in a side facing the drain electrode. The field plate interconnection connects the field plate finger with the source interconnection in one of the inactive regions opposite to the inactive region where the drain bus exists.
    Type: Application
    Filed: December 7, 2018
    Publication date: June 13, 2019
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Chihoko MIZUE, Tomohiro YOSHIDA
  • Publication number: 20190165130
    Abstract: A process of forming a nitride semiconductor device is disclosed. The process includes s steps of: (a) forming insulating films on a semiconductor stack, where the insulating films include a first silicon nitride (SiN) film, a silicon oxide (SiO2) film, and a second SiN film; (b) forming an opening in the insulating films; (c) widening the opening in the SiO2 film; (d) forming a recess in the semiconductor stack using the insulating films as a mask; (e) growing a doped region selectively within the recess simultaneously depositing the nitride semiconductor material constituting the doped region on the second SiN film; and (f) removing the nitride semiconductor material deposited on the second SiN film by removing the SiO2 film and the second SiN film.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 30, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Tomohiro YOSHIDA
  • Publication number: 20190088483
    Abstract: A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an opening corresponding to the gate electrode on the insulating film; forming a recess in the insulating film using the photoresist as an etching mask, the recess leaving a rest portion in the insulating film; exposing the photoresist in oxygen plasma; baking the photoresist to make an edge of the opening thereof dull; etching the rest portion of the insulating film using the dulled photoresist as an etching mask; and forming the gate electrode so as to be in contact with the semiconductor layer through the opening in the insulating film.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 21, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Tomohiro YOSHIDA, Hiroyuki ICHIKAWA