Patents by Inventor Tomoji Kawai

Tomoji Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100233384
    Abstract: A solution containing polymer-bound metal nanoparticles is deposited onto a substrate, at least the surface of which is insulating, to form a pattern, the substrate is dried, and then the pattern is subjected to plasma exposure.
    Type: Application
    Filed: March 20, 2007
    Publication date: September 16, 2010
    Applicants: JAPAN SCIENCE AND TECHONOLOGY AGENCY, OSAKA UNIVERSITY
    Inventors: Kaoru Ojima, Akihiko Takagi, Fumihiko Yamada, Takuya Matsumoto, Tomoji Kawai
  • Publication number: 20100051927
    Abstract: An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2?CHCOO—(CH2)2—CN ??(1) and/or a monomer represented by the formula (2): CH2?C(CH3)COO—(CH2)2—CN ??(2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.
    Type: Application
    Filed: August 31, 2009
    Publication date: March 4, 2010
    Inventors: Masateru TANIGUCHI, Tomoji Kawai, Hideyuki Kawaguchi, Ikuo Fukui
  • Patent number: 7557392
    Abstract: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.
    Type: Grant
    Filed: August 9, 2005
    Date of Patent: July 7, 2009
    Assignees: Osaka University, Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomoji Kawai, Masateru Taniguchi, Ikuo Fukui
  • Publication number: 20090145209
    Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.
    Type: Application
    Filed: December 30, 2008
    Publication date: June 11, 2009
    Inventors: Takuya MATSUMOTO, Tomoji Kawai
  • Patent number: 7507613
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: March 24, 2009
    Assignees: Osaka University, Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui
  • Patent number: 7487667
    Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.
    Type: Grant
    Filed: December 26, 2006
    Date of Patent: February 10, 2009
    Assignee: Japan Science and Technology Agency
    Inventors: Takuya Matsumoto, Tomoji Kawai
  • Patent number: 7468282
    Abstract: A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer and the magnetization of the ferromagnetic n-type semiconductor layer. In this pin junction element, an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: December 23, 2008
    Assignee: Japan Science and Technology Agency
    Inventors: Hidekazu Tanaka, Tomoji Kawai
  • Publication number: 20080308791
    Abstract: In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.
    Type: Application
    Filed: March 25, 2008
    Publication date: December 18, 2008
    Inventors: Masateru Taniguchi, Tomoji Kawai, Hideyuki Kawaguchi, Ikuo Fukui
  • Publication number: 20080215252
    Abstract: In a preferred embodiment, an exploring needle of a probe 2 is located at the position of each base of a nucleic acid 6, and a tunneling current value is set to a given value measure. When a bias voltage applied to a substrate is changed step by step from ?6 V to 4 V, according to the height of an observed image of each base, the electronic state distribution pattern of each base is obtained. The thus obtained electronic state distribution pattern of each base in the nucleic acid as a measurement object is checked against those in a database to find a base species having the highest degree of similarity to each base by pattern matching to identify each base species to determine the base sequence of the nucleic acid.
    Type: Application
    Filed: July 21, 2006
    Publication date: September 4, 2008
    Inventors: Tomoji Kawai, Hiroyuki Tanaka
  • Publication number: 20080085567
    Abstract: A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer and the magnetization of the ferromagnetic n-type semiconductor layer. In this pin junction element, an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.
    Type: Application
    Filed: November 6, 2007
    Publication date: April 10, 2008
    Inventors: Hidekazu Tanaka, Tomoji Kawai
  • Publication number: 20080050659
    Abstract: It is intended to provide a method of patterning a self-organizing material whereby a self-organizing material having a self-organization ability such as a nucleic acid can be aligned and immobilized in a desired manner on a substrate by using the imprint process, a patterned substrate of a self-organizing material and a method of producing the same, and a photomask. An immobilization layer containing a binder capable of binding to a self-organizing material is formed on a substrate. Then this immobilization layer is patterned by transferring an uneven pattern formed in a mold thereto by the imprint process. The self-organizing material is supplied onto the face having the uneven pattern of the immobilization layer transferred thereto. Thus, the self-organizing material is immobilized following the uneven pattern of the immobilization layer owing to the self-organization ability of the material per se and the binding ability of the binder contained in the immobilization layer.
    Type: Application
    Filed: September 29, 2005
    Publication date: February 28, 2008
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Toshihito Ohtake, Ken-ichiro Nakamatsu, Shinji Matsui, Hitoshi Tabata, Tomoji Kawai
  • Publication number: 20080020214
    Abstract: A method for immobilizing a self-organizing material or fine particles on a substrate, and a substrate whereupon the self-organizing material or the fine particles are immobilized. More specifically, the method for immobilizing the fine particles including a nucleic acid (for instance, DNA or RNA) or a metal oxide on the substrate, and the substrate whereupon the nucleic acid (for example, DNA or RNA) or the metal oxide is immobilized.
    Type: Application
    Filed: June 26, 2007
    Publication date: January 24, 2008
    Inventors: Tomoji Kawai, Hitoshi Tabata, Yoichi Otsuka, Fumihiko Yamada, Takuya Matsumoto
  • Patent number: 7309903
    Abstract: A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer (11) and the magnetization of the ferromagnetic n-type semiconductor layer (12). In this pin junction element (10), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: December 18, 2007
    Assignee: Japan Science and Technology Agency
    Inventors: Hidekazu Tanaka, Tomoji Kawai
  • Publication number: 20070281412
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Application
    Filed: August 1, 2007
    Publication date: December 6, 2007
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui
  • Patent number: 7265380
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: September 4, 2007
    Assignees: Osaka University, Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui
  • Patent number: 7250602
    Abstract: A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, means for feeding back a vibration amplitude value of the cantilever, thereby self-exciting and vibrating the cantilever at a predetermined frequency, means for applying a bias to the sample or the probe, and means for measuring a frequency shift caused by a charge-transfer force which acts between the cantilever and the sample.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: July 31, 2007
    Assignee: Osaka University
    Inventors: Takuya Matsumoto, Yasuhisa Naitoh, Tomoji Kawai
  • Publication number: 20070169881
    Abstract: A method for manufacturing a microelectrode includes one of allocating organic molecules or forming an organic molecular layer on a first substrate, applying a release agent onto a desired pattern formed on a second substrate, attaching an electrode material to the release agent, and bonding a surface of the second substrate to which the electrode material is attached and a surface of the first substrate on which the organic molecules are allocated or the organic molecular layer is formed to transfer the electrode material to the first substrate.
    Type: Application
    Filed: March 28, 2007
    Publication date: July 26, 2007
    Inventors: Takuya MATSUMOTO, Sinji Matsui, Kenichiro Nakamatsu, Kaoru Ojima, Tomoji Kawai
  • Publication number: 20070113630
    Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.
    Type: Application
    Filed: December 26, 2006
    Publication date: May 24, 2007
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Takuya Matsumoto, Tomoji Kawai
  • Publication number: 20070065826
    Abstract: A cationic dye compound having novel uses, the cationic dye compound being capable of conveniently and rapidly detecting a nucleic acid double strand, and a detection method using the cationic dye compound are provided. This invention relates to a cationic dye compound for detecting a nucleic acid double strand, comprising: a cation group and a chromophore coupled to said cation group, wherein said chromophore has a heteropolycyclic structure containing a nitrogen atom and said cationic dye compound is capable of helically binding onto said nucleic acid double strand.
    Type: Application
    Filed: September 6, 2004
    Publication date: March 22, 2007
    Applicant: EBARA CORPORATION
    Inventors: Chikako Takatoh, Kazuyoshi Takeda, Hirokazu Sato, Takayuki Saito, Takuya Matsumoto, Tomoji Kawai
  • Publication number: 20070007568
    Abstract: The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.
    Type: Application
    Filed: September 14, 2006
    Publication date: January 11, 2007
    Inventors: Hidekazu Tanaka, Tomoji Kawai, Teruo Kanki, Young-Geun Park