Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, means for feeding back a vibration amplitude value of the cantilever, thereby self-exciting and vibrating the cantilever at a predetermined frequency, means for applying a bias to the sample or the probe, and means for measuring a frequency shift caused by a charge-transfer force which acts between the cantilever and the sample.

Abstract: A method for manufacturing a microelectrode includes one of allocating organic molecules or forming an organic molecular layer on a first substrate, applying a release agent onto a desired pattern formed on a second substrate, attaching an electrode material to the release agent, and bonding a surface of the second substrate to which the electrode material is attached and a surface of the first substrate on which the organic molecules are allocated or the organic molecular layer is formed to transfer the electrode material to the first substrate.

Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.

Abstract: A cationic dye compound having novel uses, the cationic dye compound being capable of conveniently and rapidly detecting a nucleic acid double strand, and a detection method using the cationic dye compound are provided. This invention relates to a cationic dye compound for detecting a nucleic acid double strand, comprising: a cation group and a chromophore coupled to said cation group, wherein said chromophore has a heteropolycyclic structure containing a nitrogen atom and said cationic dye compound is capable of helically binding onto said nucleic acid double strand.

Abstract: The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: A probe device including a cantilever. A probe is attached to the cantilever and is allocated to be opposed to a surface of a sample attached thereto. An apparatus is provided with the probe device, which is capable of carrying out measurement of the sample while switching at a predetermined period two operating modes, a tapping mode for measuring a surface structure of the sample while vibrating the cantilever and a point contact mode for measuring an electrical characteristic of the sample while bringing the probe into contact with the sample.

Abstract: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

Abstract: The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.

Abstract: A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer (11) and the magnetization of the ferromagnetic n-type semiconductor layer (12). In this pin junction element (10), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.

Abstract: A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, means for feeding back a vibration amplitude value of the cantilever, thereby self-exciting and vibrating the cantilever at a predetermined frequency, means for applying a bias to the sample or the probe, and means for measuring a frequency shift caused by a charge-transfer force which acts between the cantilever and the sample.

Abstract: A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, and means for carrying out measurement of the sample while switching at a predetermined period two operating modes, a tapping mode for measuring a surface structure of the sample while vibrating the cantilever and a point contact mode for measuring an electrical characteristic of the sample while bringing the probe into contact with the sample.

Abstract: The present invention provides a method for preparing a novel low-resistance p-type SrTiO3 capable of opening the way for oxide electronics in combination with an already developed low-resistance n-type SrTiO3. The method is characterized in that an acceptor and a donor are co-doped into a perovskite-type transition-metal oxide SrTiO3 during crystal growth.

Abstract: The present invention provides a method for preparing a novel low-resistance p-type SrTiO3 capable of opening the way for oxide electronics in combination with an already developed low-resistance n-type SrTiO3. The method is characterized in that an acceptor and a donor are co-doped into a perovskite-type transition-metal oxide SrTiO3 during crystal growth.

Abstract: A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

Abstract: A thin film having a good orientation and crystallinity. A method of producing the thin film on a substrate, wherein materials of a thin film are deposited and/or crystallized on a substrate. When a laser ablation method is adopted, the temperature of the glass substrate is set in the range between 200.degree. C. and 700.degree. C., and the pressure of O.sub.2 gas in a film forming chamber is set in the range between 7.times.10.sup.-5 Torr and 1.times.10.sup.-2 Torr. A laser beam irradiates a ZnO target. The target radiates materials of a thin film, such as neutral ions, molecules and ions, and the radiated materials are deposited and/or crystallized on the glass substrate to turn into a ZnO thin film.

Abstract: There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Abstract: An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.