Patents by Inventor Tomoko Sekiguchi

Tomoko Sekiguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10387733
    Abstract: A processing apparatus includes a distance image acquirer, a moving-object detector, and a danger-level determining unit. The distance image acquirer acquires a distance image containing distance information of each pixel. The moving-object detector detects a moving object from the distance image. The danger-level determining unit determines a danger level of the moving object by use of the distance image, and outputs the danger level to a controller that controls a controlled unit in accordance with the danger level.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: August 20, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Soichiro Yokota, Tomoko Ishigaki, Hiroyoshi Sekiguchi, Kenichiroh Saisho
  • Patent number: 9830524
    Abstract: In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: November 28, 2017
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Tomoko Sekiguchi, Takeyoshi Ohashi, Junichi Tanaka, Zhaohui Cheng, Ruriko Tsuneta, Hiroki Kawada, Seiko Hitomi
  • Patent number: 9305744
    Abstract: The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: April 5, 2016
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takeyoshi Ohashi, Junichi Tanaka, Tomoko Sekiguchi, Hiroki Kawada
  • Publication number: 20150036914
    Abstract: In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).
    Type: Application
    Filed: May 24, 2012
    Publication date: February 5, 2015
    Inventors: Tomoko Sekiguchi, Takeyoshi Ohashi, Junichi Tanaka, Zhaohui Cheng, Ruriko Tsuneta, Hiroki Kawada, Seiko Hitomi
  • Publication number: 20140246585
    Abstract: The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).
    Type: Application
    Filed: September 27, 2012
    Publication date: September 4, 2014
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Takeyoshi Ohashi, Junichi Tanaka, Tomoko Sekiguchi, Hiroki Kawada
  • Patent number: 8790948
    Abstract: In the existent method for manufacturing a solar cell, manufacture of a solar cell having a quantum well having a crystalline well layer and capable of controlling the thickness of the well layer was difficult. A quantum well having an amorphous well layer, comprising a barrier layer and an amorphous well layer is formed and then the quantum well having the amorphous well layer is annealed thereby crystallizing the amorphous well layer to form a quantum well having a crystalline well layer. By applying energy density applied to the amorphous well layer at an energy density of 1.26 J/mm2 or more and 28.8 J/mm2 or less, the crystalline well layer can be formed and the lamination structure of the quantum well can be maintained simultaneously.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: July 29, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Keiji Watanabe, Toshiyuki Mine, Akio Shima, Tomoko Sekiguchi, Ryuta Tsuchiya
  • Publication number: 20130083193
    Abstract: According to one embodiment, an electronic apparatus includes: an imaging module configured to take an image; a display configured to display information; a detector configured to detect an electrical device from the image taken by the imaging module, wherein the electrical device is configured to consume power; and a display controller configured to control the display to display first information indicative of power consumption of the electrical device and second information, the second information dependent on a type of the electrical device, for evaluating an operation influencing the power consumption of the electrical device.
    Type: Application
    Filed: August 3, 2012
    Publication date: April 4, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takehiko OKUYAMA, Masashige YOGO, Tomoko SEKIGUCHI
  • Publication number: 20120149143
    Abstract: In the existent method for manufacturing a solar cell, manufacture of a solar cell having a quantum well having a crystalline well layer and capable of controlling the thickness of the well layer was difficult. A quantum well having an amorphous well layer, comprising a barrier layer and an amorphous well layer is formed and then the quantum well having the amorphous well layer is annealed thereby crystallizing the amorphous well layer to form a quantum well having a crystalline well layer. By applying energy density applied to the amorphous well layer at an energy density of 1.26 J/mm2 or more and 28.8 J/mm2 or less, the crystalline well layer can be formed and the lamination structure of the quantum well can be maintained simultaneously.
    Type: Application
    Filed: November 23, 2011
    Publication date: June 14, 2012
    Applicant: Hitachi, Ltd.
    Inventors: Keiji WATANABE, Toshiyuki MINE, Akio SHIMA, Tomoko SEKIGUCHI, Ryuta TSUCHIYA
  • Publication number: 20090230510
    Abstract: A rutile phase can be formed even in the case of a thin film by adding nickel or cobalt to titanium dioxide in the range of 0.5 to 10 atm %, and the use of this element-added titanium dioxide film in a capacitor dielectric film results in an increase in capacitance per unit area of a DRAM memory cell and enables a high-integration DRAM to be realized at low cost.
    Type: Application
    Filed: March 9, 2009
    Publication date: September 17, 2009
    Applicant: Elpida Memory, Inc.
    Inventors: Hiroshi Miki, Tomoko Sekiguchi, Naomi Inada, Mitsuhiro Horikawa
  • Publication number: 20080157157
    Abstract: A DRAM capacitor uses ruthenium or ruthenium oxide as an upper electrode and hafnium dioxide or zirconium oxide as an insulation layer. The DRAM capacitor is intended to suppress diffusion of ruthenium, etc. into hafnium dioxide. Tantalum pentoxide or niobium oxide having a higher permittivity than that of the insulation layer is inserted as a cap insulation layer to the boundary between the upper electrode of ruthenium or ruthenium oxide and the insulation layer of hafnium dioxide or zirconium oxide to thereby suppress diffusion of ruthenium, etc. into hafnium dioxide, etc.
    Type: Application
    Filed: November 15, 2007
    Publication date: July 3, 2008
    Inventors: Osamu TONOMURA, Hiroshi MIKI, Tomoko SEKIGUCHI, Kenichi TAKEDA
  • Patent number: 7364965
    Abstract: A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film oxidized by oxygen in the atmosphere grows to at least 1.5 nm on the surface of a lower electrode of the capacitor. Further, in forming the dielectric film, the dioxide film further grows in the case of using an oxidative raw material. This brings forth a reduction in capacitance, and an increase of a leakage current is caused. Therefore, after a dielectric film having a reduction property has been formed, the reduction property is promoted by a heat treatment to thereby reduce a dioxide film and realize making the dioxide film on the lower electrode surface thinner.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: April 29, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Osamu Tonomura, Hiroshi Miki, Yuichi Matsui, Tomoko Sekiguchi, Kikuo Watanabe
  • Patent number: 7247890
    Abstract: Disclosed is herein a semiconductor device having a DRAM with less scattering of threshold voltage of MISFET in a memory cell and having good charge retainability of a capacitor, and a manufacturing method of the semiconductor device. An anti-oxidation film is formed to the side wall of a gate electrode before light oxidation thereby suppressing the oxidation of the side wall for the gate electrode and decreasing scattering of the thickness of the film formed to the sidewall in an asymmetric diffusion region structure in which the impurity concentration of an n-type semiconductor region and a p-type semiconductor region on the side of the data line is made relatively higher than the impurity concentration in the n-type semiconductor region and p-type semiconductor region on the side of the capacitor, respectively.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: July 24, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Tomoko Sekiguchi, Shinichiro Kimura, Renichi Yamada, Kikuo Watanabe, Hiroshi Miki, Kenichi Takeda
  • Publication number: 20050142742
    Abstract: A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film oxidized by oxygen in the atmosphere grows to at least 1.5 nm on the surface of a lower electrode of the capacitor. Further, in forming the dielectric film, the dioxide film further grows in the case of using an oxidative raw material. This brings forth a reduction in capacitance, and an increase of a leakage current is caused. Therefore, after a dielectric film having a reduction property has been formed, the reduction property is promoted by a heat treatment to thereby reduce a dioxide film and realize making the dioxide film on the lower electrode surface thinner.
    Type: Application
    Filed: November 12, 2004
    Publication date: June 30, 2005
    Inventors: Osamu Tonomura, Hiroshi Miki, Yuichi Matsui, Tomoko Sekiguchi, Kikuo Watanabe
  • Publication number: 20050098813
    Abstract: Disclosed is herein a semiconductor device having a DRAM with less scattering of threshold voltage of MISFET in a memory cell and having good charge retainability of a capacitor, and a manufacturing method of the semiconductor device. An anti-oxidation film is formed to the side wall of a gate electrode before light oxidation thereby suppressing the oxidation of the side wall for the gate electrode and decreasing scattering of the thickness of the film formed to the sidewall in an asymmetric diffusion region structure in which the impurity concentration of an n-type semiconductor region and a p-type semiconductor region on the side of the data line is made relatively higher than the impurity concentration in the n-type semiconductor region and p-type semiconductor region on the side of the capacitor, respectively.
    Type: Application
    Filed: September 1, 2004
    Publication date: May 12, 2005
    Inventors: Tomoko Sekiguchi, Shinichiro Kimura, Renichi Yamada, Kikuo Watanabe, Hiroshi Miki, Kenichi Takeda
  • Patent number: 6150657
    Abstract: An energy filter has a plurality of deflection means and is constructed by using the plural deflection means so that an average track of an electron beam is symmetric and the normal line to a symmetric plane is inclined against an incident direction of the electron beam.
    Type: Grant
    Filed: August 25, 1998
    Date of Patent: November 21, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Koji Kimoto, Yoshifumi Taniguchi, Shunroku Taya, Shigeto Isakozawa, Takashi Aoyama, Masakazu Saito, Tomoko Sekiguchi