Abstract: A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8.

Abstract: A bacterium belonging to the genus Escherichia which has an ability to produce L-lysine or L-threonine and which is modified so that a malic enzyme does not function normally in a cell, and a method for producing L-lysine or L-threonine, comprising culturing the bacterium in a medium to produce and cause accumulation of L-lysine or L-threonine, and collecting the L-lysine or L-threonine from the medium.

Abstract: There is disclosed a method for producing an L-amino acid, for example L-threonine, L-lysine, L-histidine, L-phenylalanine, L-arginine, L-tryptophan or L-glutamic acid, using a bacterium of the Enterobacteriaceae family, wherein the bacterium has been modified to enhance an activity of L-arabinose permease.

Abstract: A material having a negative or low thermal expansion coefficient and composed substantially of a single crystal system is provided. The material is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x)(QO4)3 (where R stands for at least one tetravalent metal element selected from Zr and Hf; M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra; Q stands for at least one hexavalent metal element selected from W and Mo; and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In; 0<x<1) and composed substantially of a single crystal system.

Abstract: It is a principal object of the present invention to provide low thermal expansion materials able to answer to the needs of various uses. The present invention relates to low thermal expansion materials constituted substantially from a crystalline body represented by a compositional formula RM(QO4)3, wherein R represents at least one selected from Zr and Hf, M represents at least one selected from Mg, Ca, Sr, Ba and Ra, and Q represents at least one selected from W and Mo.

Abstract: The present invention provides a material capable of demonstrating a higher ion conductivity. The present invention relates to a solid electrolyte substantially comprising a crystal body represented by a chemical formula (RM) (QO4)3 (here, R is at least one species of Zr and Hf, M is at least one species of Mg, Ca, Sr, Ba, and Ra, and Q is at least one species of W and Mo).

Abstract: A material having a negative or low thermal expansion coefficient and composed substantially of a single crystal system is provided. The material is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x)(QO4)3 (where R stands for at least one tetravalent metal element selected from Zr and Hf; M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra; Q stands for at least one hexavalent metal element selected from W and Mo; and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In; 0<x<1) and composed substantially of a single crystal system.

Abstract: It is a principal object of the present invention to provide low thermal expansion materials able to answer to the needs of various uses. The present invention relates to low thermal expansion materials constituted substantially from a crystalline body represented by a compositional formula RM(QO4)3, wherein R represents at least one selected from Zr and Hf, M represents at least one selected from Mg, Ca, Sr, Ba and Ra, and Q represents at least one selected from W and Mo.

Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

Abstract: Using as a negative thermal expansion material a double oxide containing at least partly a compound represented by the chemical formula: RQ,O, (wherein R is Zr, Hf or a tetravalent metallic element represented by a mixture system of these, and Q is a hexavalent metallic element selected from W and Mo), and using as a positive thermal expansion material a material containing at least partly a compound represented by the chemical formula: MQX, (wherein M is Mg, Ca, Sr, Ba, Ra or a divalent metallic element represented by a mixture system of any of these, Q is a hexavalent metallic element selected from W and Mo, and X is an element selected from O and S), these are mixed preferably in a weight ratio of 1:1 and are synthesized to obtain a material whose coefficient of thermal expansion is substantially zero over a wide temperature range, i.e., a zero thermal expansion material. Using this zero thermal expansion material, high-precision and high-performance practical component parts can be obtained.

Abstract: Using as a negative thermal expansion material a double oxide containing at least partly a compound represented by the chemical formula: RQ2O8 (wherein R is Zr, Hf or a tetravalent metallic element represented by a mixture system of these, and Q is a hexavalent metallic element selected from W and Mo), and using as a positive thermal expansion material a material containing at least partly a compound represented by the chemical formula: MQX4 (wherein M is Mg, Ca, Sr, Ba, Ra or a divalent metallic element represented by a mixture system of any of these, Q is a hexavalent metallic element selected from W and Mo, and X is an element selected from O and S), these are mixed preferably in a weight ratio of 1:1 and are synthesized to obtain a material whose coefficient of thermal expansion is substantially zero over a wide temperature range, i.e., a zero thermal expansion material. Using this zero thermal expansion material, high-precision and high-performance practical component parts can be obtained.

Abstract: Using as a negative thermal expansion material a double oxide containing at least partly a compound represented by the chemical formula: RQ2O8 (wherein R is Zr, Hf or a tetravalent metallic element represented by a mixture system of these, and Q is a hexavalent metallic element selected from W and Mo), and using as a positive thermal expansion material a material containing at least partly a compound represented by the chemical formula: MQX4 (wherein M is Mg, Ca, Sr, Ba, Ra or a divalent metallic element represented by a mixture system of any of these, Q is a hexavalent metallic element selected from W and Mo, and X is an element selected from O and S), these are mixed preferably in a weight ratio of 1:1 and are synthesized to obtain a material whose coefficient of thermal expansion is substantially zero over a wide temperature range, i.e., a zero thermal expansion material. Using this zero thermal expansion material, high-precision and high-performance practical component parts can be obtained.

Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component), water (D component), and optionally an ammonium salt (E1 component), and its hydrogen ion concentration (pH) is 4-8. Thus, in the manufacturing process of a semiconductor device such as a copper interconnecting process, removing efficiency of resist residue and other etching residue after etching or ashing improves, and corrosion resistance of copper and insulating film also improves.

Abstract: A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8.

Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether.

Abstract: In a method for producing a target substance by utilizing a microorganism, which comprises culturing the microorganism in a medium to produce and accumulate the target substance in the medium and collecting the target substance from the culture, there is used, as the microorganism, a mutant strain or recombinant strain of a microorganism in which maltose assimilation is controlled by an interaction between IIAGlc protein of glucose PTS and a protein involved in non-PTS uptake of maltose, and the interaction between the IIAGlc protein and the protein involved in non-PTS uptake of maltose is reduced or eliminated in the mutant strain or recombinant strain.

Abstract: Using as a negative thermal expansion material a double oxide containing at least partly a compound represented by the chemical formula: RQ2O8 (wherein R is Zr, Hf or a tetravalent metallic element represented by a mixture system of these, and Q is a hexavalent metallic element selected from W and Mo), and using as a positive thermal expansion material a material containing at least partly a compound represented by the chemical formula: MQX4 (wherein M is Mg, Ca, Sr, Ba, Ra or a divalent metallic element represented by a mixture system of any of these, Q is a hexavalent metallic element selected from W and Mo, and X is an element selected from O and S), these are mixed preferably in a weight ratio of 1:1 and are synthesized to obtain a material whose coefficient of thermal expansion is substantially zero over a wide temperature range, i.e., a zero thermal expansion material. Using this zero thermal expansion material, high-precision and high-performance practical component parts can be obtained.

Abstract: An air outlet has a plurality of vertical vortex generating structures 21 in a triangular shape arranged so as to be oriented at an angle &thgr; with respect to diffused air.

Abstract: An air outlet has a plurality of vertical vortex generating structures 21 in a triangular shape arranged so as to be oriented at an angle .theta. with respect to diffused air.

Abstract: An electrophotographic photoreceptor has a layered-type structure comprising an electrically conductive support having thereon a charge generating layer comprising a charge generating organic material and an electron transportable carrier transport layer comprising an electron transport organic material and a binder, and the electron transport material under a mutual molecular aggregation state of the electron transport material which results in a new adsorption component at 20 nm or more longer wavelength side than the maximum monomoleclar absorption wavelength of the electron transport material is incorporated in the electron transportable carrier transport layer and the weight ratio of the electron transport material to the binder of the electron transportable carrier transport layer ranges from 25/100 to 200/100.According to the foregoing, it is possible to provide an electrophotographic photoreceptor which has a small residual electric potential and can assure an image contrast.