Abstract: Disclosed is an Fe-based electroplated steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of 5.0 g/m2 or more, in which in an intensity profile measured by glow discharge optical emission spectrometry, a peak of emission intensity at wavelengths indicating Si is detected within a range from a surface of the Fe-based electroplating layer to more than 0.2 ?m in a thickness direction and not more than a thickness of the Fe-based electroplating layer, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m in the thickness direction from the surface of the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: A semiconductor device includes semiconductor elements arranged in a first direction, an arm connection portion disposed between the semiconductor elements in the first direction, first and second power supply terminals disposed on the same side in the first direction, first and second substrates interposing the semiconductor elements therebetween, and a sealing body. The second substrate includes an insulating base member, a front-face metal body and a back-face metal body. The front-face metal body includes a second power supply wiring and a second relay wiring. The second power supply wiring includes a base portion on which the second element is arranged, and a pair of extending portions extending from the base portion in the first direction. The second relay wiring is disposed between the extending portions in a second direction, so that the second relay wiring and the base portion satisfy a relationship of L1<L2<L3.

Abstract: A semiconductor device includes a semiconductor element having main electrodes on opposite faces opposite in a predetermined direction, a substrate, and a sealing body containing resin. The substrate has an insulating base member, a front-face metal body on a front face of the insulating base member and a back-face metal body on a back face of the insulating base member, the front-face metal body being connected to at least one of the main electrodes of the semiconductor element. The insulating base member and the sealing body satisfy a relationship of Tgs?Tgi and a relationship of ?i??s, in which Tgi is a glass transition point of the insulating base member, ?i is a linear expansion coefficient of the insulating base member, Tgs is a glass transition point of the sealing body, and as is a linear expansion coefficient of the sealing body.

Abstract: A semiconductor device is to be arranged adjacent to a cooler in a predetermined direction. The semiconductor device includes a semiconductor element having main electrodes on opposite faces thereof, first and second substrates interposing the semiconductor element therebetween, and a conductive spacer interposed between the second substrate and the semiconductor element. Each of the first and second substrates includes an insulating base member, a front-face metal body connected to a corresponding main electrode, and a back-face metal body. A thickness of a part of the semiconductor device on the first substrate side from the semiconductor element is referred to as T1, and a thickness of a part of the semiconductor device on the second substrate side from the semiconductor element is referred to as T2. A relationship of T1?T2 is satisfied.

Abstract: In a semiconductor device, a plurality of semiconductor elements includes a first element and a second element arranged in a first direction perpendicular to a plate thickness direction. The first element and the second element each have a rectangular shape having four corner portions and four side portions. The first element and the second element have structures common to each other, in which pads are offset to a periphery of a first corner portion between a first side portion and a second side portion. The first element is disposed so that the first side portion faces signal terminals in a second direction, and the second side portion faces the second element in the first direction. The second element is disposed so that the second side portion faces the signal terminals in the second direction and the first side portion faces the first element in the first direction.

Abstract: A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.

Abstract: A power module comprises an element and an insulated circuit board having a laminated portion. The laminated portion includes a first metal layer, a bonding layer interposed between an element and the first metal layer, a second metal layer, and a resin layer interposed between the first metal layer and the second metal layer. The insulated circuit board has a pair of laminated portions provided so as to sandwich the element. The laminated portions are configured so that ultrasonic pulses emitted from an outside of the second metal layer toward the element have the following relationship of detection time periods. A time period in which the ultrasonic pulse travels two roundtrips in the second metal layer is longer than a time period in which the ultrasonic pulse travels one roundtrip in a range from the second metal layer to the element.

Abstract: A semiconductor device incudes: a semiconductor chip that includes an active area and an outer peripheral area surrounding the active area; a metal member that includes one face including a mounting portion on which the semiconductor chip is mounted and a peripheral member surrounding the mounting portion; a joining member that connects the semiconductor chip and the metal member; and a sealing resin body. The metal member includes, as the peripheral portion, an adhesive portion that surrounds the mounting portion and adheres to the sealing resin body, and a non-adhesive portion that is placed between the mounting portion and the adhesive portion. An entire width is placed in an area overlapping the semiconductor chip in a projection view in a thickness direction of the semiconductor chip.

Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract: In a semiconductor device, a semiconductor element has a front electrode and a back electrode. The back electrode is connected to a wiring member through a bonding member. Wire pieces are disposed in the bonding member, and bonded to a bonding surface of the wiring member to protrude toward the semiconductor element. The bonding member has, in a plan view, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region. At least four wire pieces are disposed in the outer peripheral region at positions corresponding to at least four respective corners of the semiconductor element. At least one wire piece is disposed to extend toward the element center in the plan view.

Abstract: A semiconductor device incudes: a semiconductor chip that includes an active area and an outer peripheral area surrounding the active area; a metal member that includes one face including a mounting portion on which the semiconductor chip is mounted and a peripheral member surrounding the mounting portion; a joining member that connects the semiconductor chip and the metal member; and a sealing resin body. The metal member includes, as the peripheral portion, an adhesive portion that surrounds the mounting portion and adheres to the sealing resin body, and a non-adhesive portion that is placed between the mounting portion and the adhesive portion. An entire width is placed in an area overlapping the semiconductor chip in a projection view in a thickness direction of the semiconductor chip.

Abstract: The present disclosure describes a semiconductor device including: a semiconductor chip having an electrode; a conductive member including a metal base and having a mounting portion and a peripheral portion surrounding the mounting portion; a solder that is provided between the electrode and the mounting portion; and a sealing resin body that integrally seals the semiconductor chip, at least the face opposed to the electrode in the conductive member, and the solder.

Abstract: The present disclosure describes a semiconductor device including: a semiconductor chip having an electrode; a conductive member including a metal base and having a mounting portion and a peripheral portion surrounding the mounting portion; a solder that is provided between the electrode and the mounting portion; and a sealing resin body that integrally seals the semiconductor chip, at least the face opposed to the electrode in the conductive member, and the solder.

Abstract: A semiconductor device includes an assembly configured such that a plurality of semiconductor modules is connected by a component. Each of the plurality of semiconductor modules includes a semiconductor element including a front-surface electrode fixing a front-surface electrode plate and a back-surface electrode fixing a back-surface electrode plate, wherein the component is either of a first component and a second component. The first component being configured to connect adjacent semiconductor modules to each other such that a front-surface electrode plate of one of the adjacent semiconductor modules is connected to a back-surface electrode plate of the other one of the adjacent semiconductor modules. The second component is configured to connect adjacent semiconductor modules such that respective front-surface electrode plates are connected and respective back-surface electrode plates are connected. The semiconductor modules are connected by the first component or the second component.

Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract: A semiconductor device includes: a semiconductor element; a heat sink including a first surface and a second surface, the semiconductor element being joined to the first surface, the second surface being a surface on an opposite side of the first surface; and a package that is in contact with the semiconductor element and the first surface of the heat sink, the package including a recess portion in an outer face, wherein the heat sink includes a thick portion, and a thin portion having a thickness that is smaller than that of the thick portion, and the thin portion is located on a line connecting an outer face of the semiconductor element and the recess portion in a shortest distance.

Abstract: A semiconductor device includes: a sealing body that seals a first semiconductor element and a second semiconductor element; first heat-radiating members exposed at a front surface of the sealing body; second heat-radiating members exposed at a back surface of the sealing body; first signal terminals electrically connected to the first semiconductor element, and projecting from a top surface of the sealing body in a first direction; and second signal terminals electrically connected to the second semiconductor elements, and projecting from the top surface of the sealing body in the first direction. The top surface of the sealing body includes a first inclined surface, a second inclined surface, and a boundary line or a boundary range located therebetween. The boundary line or the boundary range includes at least part of a minimum creepage path between the first signal terminals and the second signal terminals.

Abstract: The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

Abstract: A semiconductor device of a double-side cooling structure having a bus bar electrically connected, and coolers independently arranged on both sides of the semiconductor device for cooling is provided. The semiconductor device includes: a semiconductor chip including an element, and has a first main surface and a second main surface; a sealing resin body having a first surface and a second surface and also having a side surface; a first heatsink arranged facing the first main surface and electrically connected to the first main electrode; and a second heatsink arranged facing the second main surface and electrically connected to the second main electrode. The first heatsink is exposed only to the first surface. The second heatsink is exposed only to the second surface. An exposed surface of a heatsink to be electrically connected to the bus bar has a heat dissipation region, and an electrical connection region.

Abstract: Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly