Abstract: A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100° ° C. or higher, and the following Equation (1) is met: ?hEBL?1.0×10?3 (cm2/Vs) . . . (1), where ?hEBL denotes hole mobility of the first interfacial layer.

Abstract: The present disclosure discloses a photoelectric conversion element in which dark current is reduced, wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode and including quantum dots, which include nanoparticles and a protective ligand, wherein the nanoparticles contain at least two elements selected from the group consisting of group 11 elements, group 12 elements, group 13 elements, group 14 elements, group 15 elements, and group 16 elements, and the protective ligand includes a cationic ligand and an anionic ligand, and the cationic ligand and the anionic ligand both have a molecular weight of 250 or less.

Abstract: An organic EL device includes at least an anode, a first light-emitting layer, an intermediate layer, a second light-emitting layer, and a cathode in this order. The intermediate layer is adjacent to the first light-emitting layer and the second light-emitting layer. The first light-emitting layer and the second light-emitting layer can trap electrons. A material constituting the intermediate layer is a hydrocarbon that has a HOMO level equal to or lower than the HOMO level of a host of the first light-emitting layer and that has a high S1 level.

Abstract: Provided is an organic compound represented by the following general formula [1], the compound having an absorption peak in a long wavelength region: where Ar1 and Ar2 each represent an aryl group having 6 or more and 18 or less carbon atoms or the like, R1 and R2 each represent an alkyl group or the like, R3 represents a hydrogen atom or the like, Y1 to Y3 are each independently selected from a methine group and a nitrogen atom, R4 represents a substituent represented by the general formula [1-1] or the like, and R5 represents a hydrogen atom or a substituent.

Abstract: A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3): E2>E1??(1) E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element E2 [eV]: band gap of the first organic compound E3<E4?0.2??(2) E4?0.4<E5<E4??(3) E3 [eV]: electron affinity of material used for the first interfacial layer E4 [eV]: electron affinity of the quantum dots E5 [eV]: electron affinity of the first organic compound.

Abstract: A radiation detector comprising: a pixel array in which pixels each having a radiation detection element configured to convert radiation into charges and an amplification transistor configured to amplify a signal from the radiation detection element and output the amplified signal are arrayed in a matrix shape; and signal wiring provided for each pixel column, wherein a pixel isolation structure formed to surround the radiation detection element in a plan view is provided, and the amplification transistor is arranged inside a region defined by the pixel isolation structure in a plan view.

Abstract: A radiation detector comprising: a pixel array in which pixels each having a radiation detection element configured to convert radiation into charges and an amplification transistor configured to amplify a signal from the radiation detection element and output the amplified signal are arrayed in a matrix shape; and signal wiring provided for each pixel column, wherein the signal wiring does not overlap an active layer, in which the amplification transistor is arranged, in a plan view.

Abstract: A photoelectric conversion element including a first electrode, a photoelectric conversion layer, and a second electrode, in this order, wherein the photoelectric conversion layer contains a quantum dot and an organic compound, satisfies formula (1), a predetermined carrier mobility, and a predetermined energy level, and reduces a residual image, E2>E1 formula (1). E1 (eV) is the energy at a short-wavelength edge in a wavelength region of light detected by the photoelectric conversion element. E2 (eV) is the band gap of the organic compound.

Abstract: A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100° C. or higher, and the following Equation (1) is met: ?hEBL?1.0×10?3 (cm2/Vs) . . . (1), where ?hEBL denotes hole mobility of the first interfacial layer.

Abstract: Provided is a photoelectric conversion element including an anode, a photoelectric conversion layer that contains a first organic semiconductor, a second organic semiconductor, and a third organic semiconductor, and a cathode. As each of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor, a low-molecular weight organic semiconductor is used. The first organic semiconductor, the second organic semiconductor, and the third organic semiconductor have mass ratios that satisfy the following relationship: the first organic semiconductor?the second organic semiconductor?the third organic semiconductor. Further, when a total amount of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor is 100 mass %, a content of the second organic semiconductor is 6 mass % or more, and a content of the third organic semiconductor is 3 mass % or more.

Abstract: An organic photoelectric conversion element includes an electron-collecting electrode, a hole-collecting electrode, and a photoelectric conversion portion which is disposed between the electron-collecting electrode and the hole-collecting electrode. The photoelectric conversion portion includes a first organic compound layer. A second organic compound layer is disposed between the hole-collecting electrode and the photoelectric conversion portion. The first organic compound layer contains a first compound having at least a fullerene skeleton and a second compound having a fluoranthene skeleton.

Abstract: A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Abstract: An organic EL device includes at least an anode, a first light-emitting layer, an intermediate layer, a second light-emitting layer, and a cathode in this order. The intermediate layer is adjacent to the first light-emitting layer and the second light-emitting layer. The first light-emitting layer and the second light-emitting layer can trap electrons. A material constituting the intermediate layer is a hydrocarbon that has a HOMO level equal to or lower than the HOMO level of a host of the first light-emitting layer and that has a high S1 level.

Abstract: The present disclosure provides an organic compound expressed by the following General Formula 1: In General Formula 1, a partial structure Z1 represents a condensed polycyclic group that may include a nitrogen atom in a skeleton, and that includes at least one of a five-membered ring and a six-membered ring. The partial structure Z1 may include, as a substituent, a carbonyl group, a dicyanovinylidene group, a halogen atom, a cyano group, an alkyl group, an alkoxy group, an aromatic heterocyclic group, or an aryl group. R1 and R2 represent an alkyl group, aryl group, an aromatic heterocyclic group, a halogen group, or a cyano group. Ar1 represents an arylene group or a divalent aromatic heterocyclic group, and Ar2 and Ar3 represent an aryl group or an aromatic heterocyclic group. n represents an integer of 1 to 4.

Abstract: The present invention provides an organic compound represented by general formula [1] described in claims. In general formula [1], Ar1 and Ar2 are each independently selected from an aryl group and a heteroaryl group. In general formula [1], R1 to R3 are each a hydrogen atom or a substituent. R4 is an electron-withdrawing substituent. X1 is oxygen or sulfur. Y1 to Y3 are each independently selected from a carbon atom and a nitrogen atom.

Abstract: Provided is an organic light emitting device having high emission efficiency and a long continuous driving lifetime. The organic light emitting device includes: an anode; a cathode; and an emitting layer placed between the anode and the cathode, in which: the emitting layer contains an emitting material that emits fluorescence; and in an emission wavelength region of the emitting material, an absorption peak of an absorption spectrum in a minimum excited triplet state of a material having a smallest minimum excited triplet energy out of constituent materials in the emitting layer is absent.

Abstract: One embodiment of this invention has a first electrode, a first light emitting layer, and a second electrode, in which the first light emitting layer has a first host material and a first dopant material, a lowest triplet excitation energy of the first host material is higher than a lowest triplet excitation energy of the first dopant material, and, when a weight of the first light emitting layer is set to 100 wt %, a concentration of the first dopant material is 0.3 wt % or less.

Abstract: Provided is a photoelectric conversion element including an anode, a photoelectric conversion layer that contains a first organic semiconductor, a second organic semiconductor, and a third organic semiconductor, and a cathode. As each of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor, a low-molecular weight organic semiconductor is used. The first organic semiconductor, the second organic semiconductor, and the third organic semiconductor have mass ratios that satisfy the following relationship: the first organic semiconductor?the second organic semiconductor?the third organic semiconductor. Further, when a total amount of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor is 100 mass %, a content of the second organic semiconductor is 6 mass % or more, and a content of the third organic semiconductor is 3 mass % or more.

Abstract: A genome editing kit includes a viral envelope, a Cas9 protein, a surfactant, and at least one positively charged substance selected from the group consisting of protamine sulfate, polyarginine, polylysine, polyethyleneimine, and hexadimethrine bromide. A genome editing composition includes a viral envelope, a Cas9 protein, a guide RNA, and a positively charged substance. A genome editing method and a method for producing a genome-edited cell or organism include the step of bringing a viral envelope, a Cas9 protein, a guide RNA, and a positively charged substance into contact with a cell or organism. The genome editing kit etc. are capable of editing genomes of cells (e.g., immune cells (strain)) that are conventionally difficult to transfect.

Abstract: The present disclosure provides a photoelectric conversion element including a lower electrode, a photoelectric conversion layer, and an upper electrode in this order; a voltage is applied between the lower electrode and the upper electrode; the photoelectric conversion layer contains a first organic compound and a second organic compound; the first organic compound has a lower oxidation potential than the second organic compound, and ?E represented by the following formula (A) satisfies the following formula (B); where ?E=oxidation potential of first organic compound?reduction potential of second organic compound (A) ?E?1.79[V]??(B).