Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: The objective of the present invention is to provide a charged particle detector and a charged particle beam device with which it is possible to acquire a high luminous output while rapidly eliminating charged particles that are incident to a scintillator. In order to achieve said objective the present invention proposes: a charged particle detector provided with a light-emitting unit including a laminated structure obtained by laminating a GaInN-containing layer and a GaN layer, and provided with a conductive layer that is in contact with the GaInN-containing layer on the charged particle incidence surface side of the laminated structure; and a charged particle beam device.

Abstract: The disclosure provides a charged particle detector including a scintillator that emits light with stable intensity and obtains high light emission intensity regardless of an energy of an incident electron. The disclosure provides the charged particle detector including: a first light-emitting part (21) in which a layer containing Ga1-x-yAlxInyN (where 0?x<1, 0?y<1) and a layer containing GaN are alternately laminated; a second light-emitting part (23) in which the layer containing Ga1-x-yAlxInyN (where 0?x<1, 0?y<1) and the layer containing GaN are alternately laminated; and a non-light-emitting part (22) that is interposed between the first light-emitting part (21) and the second light-emitting part (23) (see FIG. 2).

Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

Abstract: The disclosure provides a charged particle detector including a scintillator that emits light with stable intensity and obtains high light emission intensity regardless of an energy of an incident electron. The disclosure provides the charged particle detector including: a first light-emitting part (21) in which a layer containing Ga1-x-yAlxInyN (where 0?x<1, 0?y<1) and a layer containing GaN are alternately laminated; a second light-emitting part (23) in which the layer containing Ga1-x-yAlxInyN (where 0?x<1, 0?y<1) and the layer containing GaN are alternately laminated; and a non-light-emitting part (22) that is interposed between the first light-emitting part (21) and the second light-emitting part (23) (see FIG. 2).

Abstract: The objective of the present invention is to provide a charged particle detector and a charged particle beam device with which it is possible to acquire a high luminous output while rapidly eliminating charged particles that are incident to a scintillator. In order to achieve said objective the present invention proposes: a charged particle detector provided with a light-emitting unit including a laminated structure obtained by laminating a GaInN-containing layer and a GaN layer, and provided with a conductive layer that is in contact with the GaInN-containing layer on the charged particle incidence surface side of the laminated structure; and a charged particle beam device.

Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

Abstract: Disclosed are an npn-type bipolar transistor as a nitride semiconductor device having good characteristics, and a method of manufacturing the same. A so-called pn epitaxial substrate has a structure wherein an n-type collector layer and a p-type base layer of a three-layer structure are provided over a substrate. The three-layer structure includes first (lower layer side), second, and third (upper layer side) p-type base layers which differ in thickness and p-type impurity concentration. In a partial region inside the second p-type base layer located as an intermediate layer in the p-type base layer of the three-layer structure, an n-type emitter region is formed by ion implantation.

Abstract: To provide a nitride semiconductor diode that includes conductive layers formed with a two-dimensional electron gas and achieves low on-state resistance characteristics, a high withstand voltage, and low reverse leakage current characteristics, each of the AlGaN layers and the GaN layers in a nitride semiconductor diode including conductive layers of a two-dimensional electron gas that are formed when the AlGaN layers and the GaN layers are alternately stacked has a double-layer structure formed with an undoped layer (upper layer) and an n-type layer (lower layer).

Abstract: Disclosed are an npn-type bipolar transistor as a nitride semiconductor device having good characteristics, and a method of manufacturing the same. A so-called pn epitaxial substrate has a structure wherein an n-type collector layer and a p-type base layer of a three-layer structure are provided over a substrate. The three-layer structure includes first (lower layer side), second, and third (upper layer side) p-type base layers which differ in thickness and p-type impurity concentration. In a partial region inside the second p-type base layer located as an intermediate layer in the p-type base layer of the three-layer structure, an n-type emitter region is formed by ion implantation.

Abstract: A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n?-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n?-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.

Abstract: Disclosed is a high performance nitride semiconductor having a reverse leak current characteristic with two-dimensional electron gas as a conductive layer. A desired impurity is diffused into or a nitride semiconductor to which a desired impurity is added is re-grown on the bottom surface and the side face portion of a recessed portion formed by dry etching using chlorine gas on the upper surface of a nitride semiconductor stacked film to increase resistance of the side face portion of the nitride semiconductor stacked film contacting an anode electrode, reducing the reverse leak current.

Abstract: A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n?-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n?-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.

Abstract: In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.

Abstract: In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.

Abstract: In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

Abstract: A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order.

Abstract: A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X?Y to the first p-type clad layer doped with a p-type impurity containing at least an AlXGa1-XN (0<X?0.2) layer, while a p-type ohmic electrode is formed at least over the second p-type clad layer in contact therewith.

Abstract: A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru—InP layer on a Ru—InP substrate or an Fe—InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order.