Abstract: An electronic apparatus according to the present invention includes at least one memory and at least one processor which function as: a detection unit configured to detect a line-of-sight position of a user within a display region; and a display control unit configured to control such that a first indicator is displayed on a basis of the line-of-sight position detected by the detection unit and an item is displayed at a position that does not overlap a range indicated by the first indicator when a predetermined condition is satisfied and is within a predetermined range from the range in response to the predetermined condition being satisfied.

Abstract: In the present invention, a contact layer formed of a material having an electron concentration of less than 1×1022 cm?3 is directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·?B due to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

Abstract: In the present invention, a contact layer formed of a material having an electron concentration of less than 1×1022 cm?3 is directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·?B due to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm?3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.

Abstract: Provided are a novel method and a novel structure for bringing a Ge or SiGe compound and a metal into ohmic contact with each other. A semiconductor device is provided with a portion composed of only i) Ge or SiGe compound, ii) a metal, and iii) an insulator or a semiconductor arranged between the material i) and the metal ii). In the semiconductor device, A) the material i) and the metal ii) have Schottky junction in the case where the holes of the material i) are majority carriers, and/or B) the material i) and the metal ii) are in an ohmic contact when the electrons of the material i) are majority carriers.

Abstract: A method for purifying an electronic item material, which comprises dissolving an electronic item material or its intermediate product in an organic solvent and having the solution contacted with activated clay at a temperature of 65° C. to 200° C.

Abstract: A method for purifying an electronic item material, which comprises dissolving an electronic item material or its intermediate product in an organic solvent and having the solution contacted with activated clay at a temperature of 65° C. to 200° C.