Patents by Inventor Tomonori Tanoue

Tomonori Tanoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060012425
    Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.
    Type: Application
    Filed: September 21, 2005
    Publication date: January 19, 2006
    Inventors: Masami Ohnishi, Hidetoshi Matsumoto, Tomonori Tanoue, Osamu Kagaya, Kenji Sekine
  • Patent number: 6984871
    Abstract: A semiconductor device with high structural reliability and low parasitic capacitance is provided. In one example, the semiconductor device has a surface. The semiconductor device comprises a semiconductor region, wherein an emitter region, a base region, and a collector region are laminated from a side near a substrate of the semiconductor region; an insulating protection layer disposed on the surface; and a wiring layer disposed on the surface, the insulating protection layer forming a via hole from the side of the substrate of the semiconductor region, the via hole being formed to allow the wiring layer to make a contact to an electrode of the emitter region from a side of the substrate where the emitter region, the base region, and the collector region are laminated and where the semiconductor region is isolated.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: January 10, 2006
    Assignee: Renesas Technology Corporation
    Inventors: Tomonori Tanoue, Kazuhiro Mochizuki, Hiroji Yamada
  • Patent number: 6958656
    Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
    Type: Grant
    Filed: June 29, 2004
    Date of Patent: October 25, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
  • Patent number: 6949974
    Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.
    Type: Grant
    Filed: December 29, 2004
    Date of Patent: September 27, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Masami Ohnishi, Hidetoshi Matsumoto, Tomonori Tanoue, Osamu Kagaya, Kenji Sekine
  • Patent number: 6943387
    Abstract: In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.
    Type: Grant
    Filed: April 9, 2003
    Date of Patent: September 13, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Isao Ohbu, Tomonori Tanoue, Chushiro Kusano, Yasunari Umemoto, Atsushi Kurokawa, Kazuhiro Mochizuki, Masami Ohnishi, Hidetoshi Matsumoto
  • Patent number: 6943624
    Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.
    Type: Grant
    Filed: June 5, 2002
    Date of Patent: September 13, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Masami Ohnishi, Hidetoshi Matsumoto, Tomonori Tanoue, Osamu Kagaya, Kenji Sekine
  • Publication number: 20050110573
    Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.
    Type: Application
    Filed: December 29, 2004
    Publication date: May 26, 2005
    Inventors: Masami Ohnishi, Hidetoshi Matsumoto, Tomonori Tanoue, Osamu Kagaya, Kenji Sekine
  • Publication number: 20050088236
    Abstract: A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.
    Type: Application
    Filed: October 29, 2004
    Publication date: April 28, 2005
    Inventors: Hidetoshi Matsumoto, Tomonori Tanoue, Satoshi Tanaka, Kiichi Yamashita
  • Patent number: 6881639
    Abstract: The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.
    Type: Grant
    Filed: February 26, 2003
    Date of Patent: April 19, 2005
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiro Mochizuki, Kiyoshi Ouchi, Tomonori Tanoue
  • Publication number: 20050046474
    Abstract: An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC-DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC-DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.
    Type: Application
    Filed: August 20, 2004
    Publication date: March 3, 2005
    Inventors: Hidetoshi Matsumoto, Tomonori Tanoue, Masami Ohnishi
  • Publication number: 20050040497
    Abstract: The technical subject of the invention is to inhibit disconnection of electrodes caused by a step and bursting caused by residual air. That is, an object of the present invention is to provide a semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. According to the invention, a hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. Accordingly, the present invention uses a novel wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate.
    Type: Application
    Filed: June 29, 2004
    Publication date: February 24, 2005
    Inventors: Chisaki Takubo, Hiroji Yamada, Kazuhiro Mochizuki, Kenichi Tanaka, Tomonori Tanoue, Hiroyuki Uchiyama
  • Patent number: 6853243
    Abstract: To provide a high frequency amplifying apparatus for reducing a phase change caused in switching to a different output level, a variable phase shifter is provided at at least one location of respective paths rearward from a branching circuit for switching a path on a high output side having an amplifier using a first semiconductor device at an output stage and a path on a low output side having an amplifier using a second semiconductor device with a smaller output than the first semiconductor device on an output stage in accordance with a desired output level. After branching and a phase length of the variable phase shifter is set to a pre-determined value such that passing phase lengths of the respective paths become substantially the same by passing either of the paths.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: February 8, 2005
    Assignee: Renesas Technology Corporation
    Inventors: Kenji Sekine, Tomonori Tanoue, Osamu Kagaya
  • Publication number: 20040232990
    Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
    Type: Application
    Filed: June 29, 2004
    Publication date: November 25, 2004
    Applicant: Renesas Technology Corp.
    Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
  • Patent number: 6822517
    Abstract: A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.
    Type: Grant
    Filed: January 9, 2004
    Date of Patent: November 23, 2004
    Assignee: Renesas Technology Corp.
    Inventors: Hidetoshi Matsumoto, Tomonori Tanoue, Satoshi Tanaka, Kiichi Yamashita
  • Patent number: 6816017
    Abstract: A power amplifier module is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation. Increase in base current from idling current of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-RET. By also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-RET, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-RET.
    Type: Grant
    Filed: August 20, 2001
    Date of Patent: November 9, 2004
    Assignee: Renesas Technology Corp.
    Inventors: Kiichi Yamashita, Tomonori Tanoue, Isao Ohbu, Kenji Sekine
  • Publication number: 20040212034
    Abstract: The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.
    Type: Application
    Filed: March 1, 2004
    Publication date: October 28, 2004
    Inventors: Kazuhiro Mochizuki, Isao Ohbu, Tomonori Tanoue, Chisaki Takubo, Kenichi Tanaka
  • Publication number: 20040212438
    Abstract: A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding pad 106 having a capacitance component to a ground and stitch structure inductances 108, 109 composed of a bonding wire 105 provided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.
    Type: Application
    Filed: April 23, 2004
    Publication date: October 28, 2004
    Inventors: Masami Ohnishi, Tomonori Tanoue, Hidetoshi Matsumoto
  • Patent number: 6775525
    Abstract: A radio communication apparatus including at the transmitter-side output stage a high-frequency power amplifier module that has incorporated therein a single-stage amplifier using one multi-finger type heterojunction bipolar transistor (HBT) or a multi-stage amplifier using a plurality of HBTs sequentially connected in cascade, and at the output end an antenna connected to the high-frequency power amplifier module, wherein first capacitors and first resistors are inserted in series between the input terminal of the high-frequency power amplifier module and the control fingers of the HBT, and second resistors are inserted between the control terminal of the high-frequency power amplifier module and the control fingers of the HBT and connected to the nodes of the first resistors and the first capacitors.
    Type: Grant
    Filed: October 26, 2000
    Date of Patent: August 10, 2004
    Assignee: Renesas Technology Corporation
    Inventors: Tomonori Tanoue, Kiichi Yamashita
  • Patent number: 6771128
    Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
    Type: Grant
    Filed: October 20, 2000
    Date of Patent: August 3, 2004
    Assignee: Renesas Technology Corp.
    Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
  • Publication number: 20040145417
    Abstract: A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.
    Type: Application
    Filed: January 9, 2004
    Publication date: July 29, 2004
    Inventors: Hidetoshi Matsumoto, Tomonori Tanoue, Satoshi Tanaka, Kiichi Yamashita