Abstract: A semiconductor device is provided. The device includes a semiconductor layer which forms a part of first and second surfaces respectively, a wiring structure arranged on the second surface, and a pad. An opening portion for exposing the pad is provided in the first surface. The pad is arranged between the first surface and a wiring layer closest to the second surface among wiring layers arranged in the wiring structure, and has a third surface which partially exposed by the opening portion. An insulating portion forming a part of the second surface is embedded in the semiconductor layer. An outer edge of the insulating portion is arranged so as to surround an outer edge of the pad. A wall surface of the opening portion is formed by the semiconductor layer and the insulating portion, or formed by the insulating portion.

Abstract: There is provided a novel sophorolipid derivative having high water solubility and surface activity. A plurality of sophorolipid derivatives having a novel structure is isolated and purified from a cultured product of sophorolipid producing microorganism (Starmerella bombicola, etc.) (wherein, R1 to R3 are each independently hydrogen, a fatty acid ester having 2 to 22 carbon atoms, or the above SL group, provided that at least one of R1 to R3 is the SL group in which R are the same or different and each represent hydrogen or an acetyl group and Rn is a linear or branched alkyl or alkenyl group having 13 to 21 carbon atoms).

Abstract: A microorganism of the present invention is Dirkmeia churashimaensis (NITE BP-03054), Papiliotrema flavescens (NITE BP-03051), Papiliotrema flavescens (NITE BP-03052), or Apiotrichum porosum (NITE BP-03053).

Abstract: A microorganism of the present invention is Dirkmeia churashimaensis (NITE BP-03054), Papiliotrema flavescens (NITE BP-03051), Papiliotrema flavescens (NITE BP-03052), or Apiotrichum porosum (NITE BP-03053).

Abstract: Provided is a monoacylated MEL. A microorganism of the genus Pseudozyma produces monoacylated MEL-B.

Abstract: There is provided a novel ionic composite material that can be molded into various shapes using lignin sulfonic acid as one of raw materials thereof, and having flexibility and elasticity, to significantly improve the strength and toughness and impart complete biodegradability thereto. It was found that a combination of ?-polylysine (?-PL) which is a cationic polymer that is produced by microorganisms and lignin sulfonic acid exhibits excellent strength and toughness. In addition, ?-PL used in this technology is a biodegradable polymer that is completely degraded by microorganisms and the like in the environment. Since lignin sulfonic acid is also a biodegradable polymer, it is thought that a complex in which ?-PL and lignin sulfonic acid are mixed in this technology will exhibit complete biodegradability, and more applications thereof can be expected when utilizing the strength, durability, and biodegradability thereof in addition to the improved strength and toughness.

Abstract: Provided is a means for increasing mannosylerythritol lipid (MEL) production efficiency. The present invention is a mannosylerythritol-lipid-producing microorganism transformed with an expression vector having a gene that encodes a lipase under the control of E5Pgap promoter or E5Ptef promoter.

Abstract: Provided is a means for efficiently producing a monoacyl MEL. This means comprises culturing a monoacyl-MEL-producing microorganism in the presence of a surfactant.

Abstract: The purpose of the present invention is to provide a PHA, in particular PHBV, having a molecular weight exceeding 3,610,000 and/or a method for producing such a PHA while controlling the molecular weight thereof. Provided is a copolymer of random copolymerization of 3-hydroxybutanoic acid and 3-hydroxyvaleric acid, having a weight-average molecular weight exceeding 3,610,000.

Abstract: An enzyme having the following characteristics (a) and (b): (a) the enzyme has an activity of reversible dehydrogenation of D-amino acids; (b) the enzyme is a hexamer of polypeptides having an amino acid sequence having 80% or greater identity to the amino acid sequence of SEQ ID NO: 2.

Abstract: An enzyme has an activity of reversible dehydrogenation of D-amino acid and is a hexamer of polypeptides having an amino acid sequence that has 80% or more identity with the amino acid sequence of SEQ ID NO: 2. The amino acid sequence of the polypeptide can include one or more amino acid substitutions for one or more amino acid residues of SEQ ID NO: 2.

Abstract: An enzyme having the following characteristics (a) and (b): (a) the enzyme has an activity of reversible dehydrogenation of D-amino acids; (b) the enzyme is a hexamer of polypeptides having an amino acid sequence having 80% or greater identity to the amino acid sequence of SEQ ID NO: 2.

Abstract: There is provided a novel ionic composite material that can be molded into various shapes using lignin sulfonic acid as one of raw materials thereof, and having flexibility and elasticity, to significantly improve the strength and toughness and impart complete biodegradability thereto. It was found that a combination of ?-polylysine (?-PL) which is a cationic polymer that is produced by microorganisms and lignin sulfonic acid exhibits excellent strength and toughness. In addition, ?-PL used in this technology is a biodegradable polymer that is completely degraded by microorganisms and the like in the environment. Since lignin sulfonic acid is also a biodegradable polymer, it is thought that a complex in which ?-PL and lignin sulfonic acid are mixed in this technology will exhibit complete biodegradability, and more applications thereof can be expected when utilizing the strength, durability, and biodegradability thereof in addition to the improved strength and toughness.

Abstract: An enzyme having the following characteristics of (a) and (b): (a) the enzyme has an activity of reversible dehydrogenation of D-amino acid; and (b) the enzyme is a hexamer of polypeptides having an amino acid sequence that has 80% or more identity with an amino acid sequence of SEQ ID NO: 2.

Abstract: To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

Abstract: To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

Abstract: To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

Abstract: To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

Abstract: To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

Abstract: To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in apart exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.