Abstract: A positive electrode active material for lithium ion batteries, the positive electrode active material being represented by a composition shown in the following formula (1): LiaNibCOcMndMeOf??(1) in which formula (1), 1.0?a?1.05, 0.8?b?0.9, b+c+d+e=1, 1.8?f?2.2, 0.0025?e/(b+c+d+e)?0.016, and M is at least one selected from Zr, Ta and W; wherein WDX mapping analysis of positive electrode active material particles in a field of view of 50 ?m×50 ?m by FE-EPMA indicates that an oxide of the M adheres to surfaces of the positive electrode active material particles, and the oxide of the M is not present as independent particles that do not adhere to the surfaces of the positive electrode active material particles.

Abstract: Provided is a jig for supporting a plate-shaped workpiece made of a sintered compact when subjecting the workpiece to a steam treatment. The jig is provided with a bottom plate configured to support a plurality of workpieces in a stacked manner, and a guide rod erected on one surface of the bottom plate to position the stacked workpieces. An opening configured to allow supplied steam to pass through downward is formed in a vicinity of a portion of the bottom plate on which the workpiece is to be supported.

Abstract: A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder.

Abstract: A cathode active material for lithium-ion battery is provided, which provides good battery characteristics such as cycle characteristics. The cathode active material for lithium-ion battery is expressed by the composition formula: LixNi1-yMyO?, wherein M is one or more selected from Ti, Cr, Mn, Fe, Co, Cu, Al, Sn, Mg and Zr; 0.9?x?1.2; 0<y?0.5; and 2.0???2.2, wherein the crystallite size obtained by analyzing the XRD pattern is 870 ? or more and the unit lattice volume is 101.70 ?3 or less.

Abstract: A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84?x?0.98, 0<y?0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Abstract: A defect inspection device according to one aspect of the present invention includes a light source, a detector that receives light from an illuminated region of a sample, a stage that changes a relative position between light from the light source and the sample in order to sequentially inspect a plurality of unit inspection regions, a comparator that compares a detection signal output from the detector with a threshold according to scanning in the stage, a mask position setting unit that sets a common position of the plurality of unit inspection regions as a mask position in order to mask the common position when the plurality of unit inspection regions are sequentially inspected, and a defect detection unit that detects a defect based on a comparison result in the comparison unit in another region than the mask position.

Abstract: A melted and cast Cu—Ga alloy sputtering target containing 22 at % or more and 29 at % or less of Ga, and remainder being Cu and unavoidable impurities, wherein the Cu—Ga alloy sputtering target has an eutectoid structure configured from a mixed phase of a ? phase, which is an intermetallic compound layer of Cu and Ga, and a ? phase, and satisfies a relational expression of D?7×C?150 when a diameter of the ? phase is D ?m and a Ga concentration is C at %. A sputtering target having a cast structure is advantageous in that gas components such as oxygen can be reduced in comparison to a sintered compact target. Thus, it is possible to reduce oxygen and obtain a target with a favorable cast structure, in which the segregated phase is dispersed, by continuously solidifying the sputtering target having the foregoing cast structure under a solidifying condition of a constant cooling rate.

Abstract: A cathode active material for lithium-ion battery is provided, which provides good battery characteristics such as cycle characteristics. The cathode active material for lithium-ion battery is expressed by the composition formula: LixNi1-yMyO?, wherein M is one or more selected from Ti, Cr, Mn, Fe, Co, Cu, Al, Sn, Mg and Zr; 0.9?x?1.2; 0<y?0.5; and 2.0???2.2, wherein the crystallite size obtained by analyzing the XRD pattern is 870 ? or more and the unit lattice volume is 101.70 ?3 or less.

Abstract: The purpose of the invention is to provide a sputtering target formed from a Cu—Ga alloy having a Ga composition of 29 at % or more. [Problem] Since a Cu—Ga alloy becomes a brittle ? phase-single phase structure when the Ga composition becomes 29 at % or more, it cannot be subject to processes such as rolling and forging. Accordingly, the crystal grain size of the cast structure must be small and uniform so that the cast structure can be used as is. [Solution] It is possible to produce a melted and cast Cu—Ga alloy sputtering target containing 29 to 42.6 at % of Ga, and remainder being Cu and unavoidable impurities by continuously solidifying the Cu—Ga alloy sputtering target under solidifying conditions of a constant cooling rate or higher, wherein an average crystal grain size of a sputter front face is 3 mm or less, and a cross section structure of the target is a columnar structure that has grown in a direction from the sputter front face toward a center plane which is parallel to a sputter face.

Abstract: A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder.

Abstract: A defect inspection device according to one aspect of the present invention includes a light source, a detector that receives light from an illuminated region of a sample, a stage that changes a relative position between light from the light source and the sample in order to sequentially inspect a plurality of unit inspection regions, a comparator that compares a detection signal output from the detector with a threshold according to scanning in the stage, a mask position setting unit that sets a common position of the plurality of unit inspection regions as a mask position in order to mask the common position when the plurality of unit inspection regions are sequentially inspected, and a defect detection unit that detects a defect based on a comparison result in the comparison unit in another region than the mask position.

Abstract: A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84?x?0.98, 0<y?0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Abstract: The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure.

Abstract: A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn1?xGaxSe2?y (provided that x and y respectively represent atomic ratios), a composition range of 0<x?0.5, 0?y?0.04, and a relative density of 90% or higher. Specifically, a CIGS quaternary alloy sputtering target of high density and low oxygen concentration, and a CIGS quaternary alloy sputtering target comprising the intended bulk resistance.

Abstract: A defect inspection apparatus according to an aspect of the present invention includes a laser source generating light beam, an objective lens focusing the light beam emitted from the laser source to form a light spot on a surface of a sample W, a prism dividing the light beam reflected from the sample into two light beams, two light receiving elements receiving the light beams divided by the prism to output output signals based on the beam amount of the received beams, and a real defect determination part determining a candidate detect as a real defect when output signals from the two light receiving elements are detected substantially at the same time.

Abstract: A defect inspection apparatus according to an aspect of the present invention includes a laser source generating light beam, an objective lens focusing the light beam emitted from the laser source to form a light spot on a surface of a sample W, a prism dividing the light beam reflected from the sample into two light beams, two light receiving elements receiving the light beams divided by the prism to output output signals based on the beam amount of the received beams, and a real defect determination part determining a candidate detect as a real defect when output signals from the two light receiving elements are detected substantially at the same time.

Abstract: Raw materials are portioned in a plurality of molds, which are continuously moved and transferred to a heating area by a conveyer. The heating area is divided into a plurality of sub-areas, each of which has power source means and power feeding means. The raw materials are heated and molded by applying high frequency to the molds from the power feeding means. Even if the heating apparatus is large, it is possible to restrain or prevent concentration of high-frequency energy since the heating area is divided into sub-areas.

Abstract: A vortex flow blower used as an air source to be incorporated into general industrial machines. The vortex flow blower is characterized in that the shape of the blade in its impeller is three dimensionally formed such that at least the inner portion of the blade can be adapted to the three dimensional internal flow. According to the present invention, the aerodynamic performance can be significantly improved and the size of a vortex flow blower can be reduced. Furthermore, an impeller having three dimensionally shaped blades is manufactured by independently manufacturing the shroud and the blades and coupling them, so that the impeller of a complicated shape can be readily manufactured. Furthermore, since the blade can be made of a thin and light material, the secondary moment of inertia of the impeller can be reduced.

Abstract: A vortex flow blower used as an air source to be incorporated into general industrial machines. The vortex flow blower is characterized in that the shape of the blade in its impeller is three dimensionally formed such that at least the inner portion of the blade can be adapted to the three dimensional internal flow. According to the present invention, the aerodynamic performance can be significantly improved and the size of a vortex flow blower can be reduced. Furthermore, an impeller having three dimensionally shaped blades is manufactured by independently manufacturing the shroud and the blades and coupling them, so that the impeller of a complicated shape can be readily manufactured. Furthermore, since the blade can be made of a thin and light material, the secondary moment of inertia of the impeller can be reduced.

Abstract: A vortex flow blower used as an air source to be incorporated into general industrial machines. The vortex flow blower is characterized in that the shape of the blade in its impeller is three dimensionally formed such that at least the inner portion of the blade can be adapted to the three dimensional internal flow. According to the present invention, the aerodynamic performance can be significantly improved and the size of a vortex flow blower can be reduced. Furthermore, an impeller having three dimensionally shaped blades is manufactured by independently manufacturing the shroud and the blades and coupling them, so that the impeller of a complicated shape can be readily manufactured. Furthermore, since the blade can be made of a thin and light material, the secondary moment of inertia of the impeller can be reduced.