Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.

Abstract: A resist composition including a resin component having more than 30 mol % of a structural unit represented by formula (a0-1), and an acid generator represented by formula (b1) in which R01 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Va01 represents an alkylene group; Ra01 represents an acid dissociable group; Rb01 represents an cyclic hydrocarbon group; Lb01 represents —O—C(?O)— or —C(?O)—O—; Yb01 represents a divalent linking group or a single bond; Vb01 represents a fluorinated alkylene group; Rb02 represents a fluorine atom or a hydrogen atom; provided that the total number of fluorine atoms contained in Vb01 and Rb02 is 2 or 3; and Mm+ represents an m-valent organic cation.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A liquid ejecting apparatus includes a liquid container and a control unit. The liquid container has an upper limit mark. The upper limit mark is arranged so that in a first case where an entire amount of liquid stored in a refilling container is injected into a storage portion when a notification unit notifies of a first state, a liquid level of the liquid in the storage portion is located between an inlet port and the upper limit mark, and in a second case where the entire amount of liquid stored in the refilling container is injected into the storage portion when the notification unit notifies of a second state, the liquid level overlaps with the upper limit mark.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including: a base component which exhibits changed solubility in a developing solution under action of acid and a fluorine additive component which exhibits decomposability to an alkali developing solution, the fluorine additive component including a fluorine resist component having a structural unit derived from a compound represented by general formula (f1-1) in which W represents a polymerizable group-containing group; Rf1 and Rf2 each independently represents a hydrogen atom or an electron-withdrawing group; and Rf3 represents a hydrocarbon group

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A resist composition including a resin component having more than 30 mol % of a structural unit represented by formula (a0-1), and an acid generator represented by formula (b1) in which R01 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Va01 represents an alkylene group; Ra01 represents an acid dissociable group; Rb01 represents an cyclic hydrocarbon group; Lb01 represents —O—C(?O)— or —C(?O)—O—; Yb01 represents a divalent linking group or a single bond; Vb01 represents a fluorinated alkylene group; Rb02 represents a fluorine atom or a hydrogen atom; provided that the total number of fluorine atoms contained in Vb01 and Rb02 is 2 or 3; and Mm+ represents an m-valent organic cation.