Abstract: A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO2— containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond).

Abstract: A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, C1˜5 alkyl group, C1˜5 halogenated alkyl group; Vx01 is divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yx01 is single bond or divalent linking group; Rx1 is substituent having nitrogen atom).

Abstract: Provided is a method for producing an oxymethylene copolymer continuously and with high polymerization yield, whereby it becomes possible to improve heat stability and the formaldehyde generation amount while keeping MD resistance and folding endurance. Provided is a method for producing an oxymethylene copolymer, which comprises the steps of: carrying out a copolymerization reaction of a monomer raw material comprising trioxane and 1,3-dioxolane in an amount of 7.0 to 22 mass % relative to the amount of trioxane in the presence of boron trifluoride in an amount of 0.03 to 0.10 mmol relative to 1 mol of trioxane and sterically hindered phenol in an amount of 0.006 to 2.0 mass % relative to the amount of trioxane; and adding a polymerization terminator to a reaction system at the point of time at which the polymerization yield of the copolymer becomes 92% or more to terminate the polymerization.

Abstract: A resist composition including a polymeric compound having a structural unit derived from an acrylate ester containing a lactone-containing cyclic group having a group represented by general formula (a0-r-1) on the side chain and optionally having the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent: in formula (a0-r-1), Ra3 and Ra4 each independently represents a hydrogen atom or a non-aromatic hydrocarbon group optionally having a substituent, provided that Ra3 and Ra4 are optionally mutually bonded to form a ring with the carbon atom bonded to Ra3 and the nitrogen atom bonded to Ra4; and * represents a valence bond.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A method for the continuous production, at high polymerization yield, of an oxymethylene copolymer having improved thermal stability and formaldehyde emission, while maintaining toughness and rigidity, is provided. Provided is a production method for oxymethylene copolymer, including: a step of carrying out a copolymerization reaction of trioxane and 1,3-dioxolane in an amount of 0.9-2.4 mass % with respect to the trioxane, in the presence of 0.001-0.007 mol % of boron trifluoride and 0.006-2.0 mass % of a sterically hindered phenol with respect to the trioxane; and a step of adding a polymerization terminator to the reaction system at the point in time that the polymerization yield of the copolymerization reaction has reached 92% or above, to terminate polymerization.

Abstract: Disclosed is a monomer containing an N-acylcarbamoyl group and a lactone skeleton. The monomer is exemplified by Formula (1): where Ra is selected typically from hydrogen and C1-C6 alkyl; R1 is, independently in each occurrence, selected typically from halogen and optionally halogenated C1-C6 alkyl; “A” is selected from C1-C6 alkylene, oxygen, sulfur, and non-bond; m represents an integer of 0 to 8; X represents, independently in each occurrence, specific N-acylcarbamoyl; n represents an integer of 1 to 9; and Y represents a C1-C6 divalent organic group.

Abstract: A resist composition including a polymeric compound having a structural unit derived from an acrylate ester containing a lactone-containing cyclic group having a group represented by general formula (a0-r-1) on the side chain and optionally having the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent: in formula (a0-r-1), Ra3 and Ra4 each independently represents a hydrogen atom or a non-aromatic hydrocarbon group optionally having a substituent, provided that Ra3 and Ra4 are optionally mutually bonded to form a ring with the carbon atom bonded to Ra3 and the nitrogen atom bonded to Ra4; and * represents a valence bond.

Abstract: A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract: A resist composition includes a high-molecular weight compound having a constituent unit (a0) represented by a general formula (a0-1), an acid generator component (B) which generates an acid upon exposure, and a photodegradable base (D1) which is decomposed upon exposure to lose acid diffusion controlling properties, and a mixing ratio of the component (D1) to the component (B) is 0.5 or more in terms of a molar ratio represented by (D1)/(B). In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, an optionally substituted chain alkyl group, or an optionally substituted chain alkenyl group.

Abstract: A resist composition including a base material component whose solubility in a developing solution changes by the action of an acid and an acid generator component which generates an acid upon exposure. The acid generator component includes an acid generator that includes a compound containing nitrogen atoms having proton acceptor properties and sites capable of generating an acid upon exposure in the same molecule, the number of the sites being larger than the number of the nitrogen atoms.

Abstract: A polymeric compound including a structural unit (a0) represented by general formula (a0-1) shown below and a polycyclic group-containing structural unit (a2m) other than the structural unit (a0), the structural unit (a2m) containing a lactone-containing polycyclic group, a —SO2-containing polycyclic group or a carbonate-containing polycyclic group, and a resist composition including the same: wherein R0 represents a hydrocarbon group of 1 to 6 carbon atoms which may have a substituent, or a hydrogen atom; Ya0 represents a single bond or a divalent linking group; L represents an ester bond; and Ra0 represents a polycyclic group having a bridged ring polycyclic skeleton or a condensed ring polycyclic skeleton, which has in its skeleton —C(?O)O— or —SO2—, and at least one of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group.

Abstract: A method of producing a polymeric compound, including: copolymerizing a monomer containing an —SO2— containing cyclic group with a monomer containing an acid decomposable group which exhibits increased polarity by the action of acid, thereby obtaining the polymeric compound, provided that the polymeric compound comprises no structural unit derived from a monomer that generates acid upon exposure, wherein the copolymerizing is conducted in the presence of 0.001 to 1.0 mol % of a basic compound, based on the monomer containing an —SO2— containing cyclic group.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure and a fluorine-containing polymeric compound (C?) which generates acid upon exposure, the base component (A) having a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and the fluorine-containing polymeric compound (C?) having a structural unit (c0) which generates acid upon exposure and a structural unit (c1) represented by formula (c1) (wherein R2 represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton, Q0 represents a single bond or a divalent linking group, and R0 represents an organic group which may have a fluorine atom).

Abstract: A solid-state imaging device includes: a pixel part having a photoelectric conversion part photoelectrically converting incident light to obtain signal charge; and a peripheral circuit part formed on a periphery of the pixel part on a semiconductor substrate. The pixel part having a vertical transistor that reads out the signal charge from the photoelectric conversion part and a planar transistor that processes the signal charge read out by the vertical transistor. The vertical transistor has a groove part formed on the semiconductor substrate; a gate insulator film formed on an inner surface of the groove part; a conducting layer formed on a surface of the gate insulator film on the semiconductor substrate within and around the groove part; a filling layer filling an interior of the groove part via the gate insulator film and the conducting layer; and an electrode layer connected to the conducting layer on the filling layer.

Abstract: A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In the formula (a5-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of Ra and Rb independently represents a hydrocarbon group which may have a substituent, and Ra and Rb may be mutually bonded to form a ring.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms).

Abstract: A resist composition including a base component (A) that exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1)) containing an acid decomposable group that exhibits increased polarity under action of acid, and the amount of the structural unit (a0) is less than 50 mol %, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; R1 represents a divalent linking group; R2 represents a —SO2— containing cyclic group; and v represents 0 or 1.