Patents by Inventor Tomoyuki Sasaki
Tomoyuki Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230354621Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.Type: ApplicationFiled: June 29, 2023Publication date: November 2, 2023Applicant: TDK CORPORATIONInventors: Zhenyao TANG, Tomoyuki SASAKI
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Product-sum operation device, neuromorphic device, and method for using product-sum operation device
Patent number: 11797829Abstract: The product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of product operation elements, and an alternative element that, when any of the plurality of product operation elements has malfunctioned, is used instead of the malfunctioning product operation element. Each of the plurality of product operation elements and the alternative element is a resistance change element. The sum operator includes an output detector which detects a sum of outputs from the plurality of product operation elements when the alternative element is not used.Type: GrantFiled: December 12, 2018Date of Patent: October 24, 2023Assignee: TDK CORPORATIONInventors: Tatsuo Shibata, Tomoyuki Sasaki -
Patent number: 11793088Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.Type: GrantFiled: November 1, 2022Date of Patent: October 17, 2023Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Yohei Shiokawa
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Patent number: 11778925Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.Type: GrantFiled: February 9, 2021Date of Patent: October 3, 2023Assignee: TDK CORPORATIONInventors: Zhenyao Tang, Yohei Shiokawa, Tomoyuki Sasaki
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Patent number: 11776604Abstract: A magnetic recording array includes a plurality of units. Each unit has a first magnetoresistance effect element, second magnetoresistance effect element, and writing transistor. Each of the first magnetoresistance effect element and the second magnetoresistance effect element has a wiring and a laminate which is laminated on the wiring. The writing transistor is connected to each of the wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element. The wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element are electrically connected in series at the time of writing, and a writing current flows through each of the wirings. A direction of a writing current flowing in the wiring of the first magnetoresistance effect element and a direction of a writing current flowing in the wiring of the second magnetoresistance effect element are opposite to each other.Type: GrantFiled: March 5, 2020Date of Patent: October 3, 2023Assignee: TDK CORPORATIONInventor: Tomoyuki Sasaki
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Publication number: 20230309415Abstract: A magneto resistive element includes a laminate including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer and an insulating layer configured to cover at least a part of a side surface of the laminate and including an insulator. The first ferromagnetic layer has a first non-nitride region and a first nitride region that is closer to the insulating layer than the first non-nitride region and contains nitrogen.Type: ApplicationFiled: March 23, 2022Publication date: September 28, 2023Applicant: TDK CorporationInventors: Katsuyuki NAKADA, Tomoyuki SASAKI
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Patent number: 11770978Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.Type: GrantFiled: November 25, 2020Date of Patent: September 26, 2023Assignee: TDK CORPORATIONInventors: Yugo Ishitani, Tomoyuki Sasaki, Yohei Shiokawa
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Patent number: 11763841Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.Type: GrantFiled: August 26, 2021Date of Patent: September 19, 2023Assignee: TDK CORPORATIONInventor: Tomoyuki Sasaki
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Patent number: 11751488Abstract: A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.Type: GrantFiled: January 24, 2020Date of Patent: September 5, 2023Assignee: TDK CORPORATIONInventors: Kosuke Hamanaka, Tomoyuki Sasaki, Yohei Shiokawa
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Patent number: 11730001Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.Type: GrantFiled: June 8, 2022Date of Patent: August 15, 2023Assignee: TDK CORPORATIONInventors: Zhenyao Tang, Tomoyuki Sasaki
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Publication number: 20230247916Abstract: A magnetic element according to the present embodiment includes a wiring layer, and a first ferromagnetic layer in contact with the wiring layer, in which the wiring layer includes a crystalline first layer, and an amorphous second layer which is between the first ferromagnetic layer and the first layer.Type: ApplicationFiled: July 30, 2021Publication date: August 3, 2023Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yohei SHIOKAWA
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Publication number: 20230225222Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0<x?4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.Type: ApplicationFiled: December 13, 2022Publication date: July 13, 2023Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Katsuyuki NAKADA, Tatsuo SHIBATA
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Publication number: 20230210017Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.Type: ApplicationFiled: February 10, 2023Publication date: June 29, 2023Applicant: TDK CorporationInventor: Tomoyuki SASAKI
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Publication number: 20230200259Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.Type: ApplicationFiled: February 24, 2023Publication date: June 22, 2023Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yohei SHIOKAWA
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Publication number: 20230189663Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element, a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.Type: ApplicationFiled: January 31, 2023Publication date: June 15, 2023Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Yohei SHIOKAWA, Atsushi TSUMITA
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Patent number: 11676751Abstract: A magnetic device is equipped with a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and an insulator which covers at least a part of side surfaces of the stacked body, in which the insulator has a space outside the side surface of the stacked body.Type: GrantFiled: March 1, 2021Date of Patent: June 13, 2023Assignee: TDK CORPORATIONInventors: Zhenyao Tang, Yohei Shiokawa, Tomoyuki Sasaki
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Patent number: 11665976Abstract: A reservoir element of the first aspect of the present disclosure includes: a spin conduction layer containing a non-magnetic conductor; ferromagnetic layers positioned in a first direction with respect to the spin conduction layer and spaced apart from each other in a plan view from the first direction; and via wirings electrically connected to spin conduction layer on a surface opposite to a surface with the ferromagnetic layers.Type: GrantFiled: September 10, 2019Date of Patent: May 30, 2023Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Tatsuo Shibata
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Patent number: 11641784Abstract: A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.Type: GrantFiled: October 22, 2020Date of Patent: May 2, 2023Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Yohei Shiokawa
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Patent number: 11637237Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.Type: GrantFiled: April 7, 2022Date of Patent: April 25, 2023Assignee: TDK CORPORATIONInventor: Tomoyuki Sasaki
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Patent number: 11637236Abstract: A spin-orbit torque magnetoresistance effect element according to the present embodiment includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part positioned between the first conductive part and the second conductive part when viewed from the first direction, facing a second surface of the spin-orbit torque wiring on a side opposite to a first surface which faces the element part, and including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, inType: GrantFiled: February 1, 2019Date of Patent: April 25, 2023Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Atsushi Tsumita, Yohei Shiokawa