Patents by Inventor Tongshang Su

Tongshang Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210066353
    Abstract: An array substrate and a display device are provided in embodiments of the present disclosure. The array substrate includes a base substrate, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source-drain electrode electrically conductive layer, a passivation layer, and a first light shielding layer. The first light shielding layer is disposed on a side of the passivation layer facing away from the interlayer insulating layer. An orthographic projection of the first light shielding layer on the base substrate at least partially overlaps with an orthographic projection of the active layer on the base substrate, and the first light shielding layer is formed by a photoresist material.
    Type: Application
    Filed: July 14, 2020
    Publication date: March 4, 2021
    Inventors: Tongshang Su, Dongfang Wang, Jun Liu, Qinghe Wang, Jun Wang, Ning Liu, Guangyao Li
  • Publication number: 20210057459
    Abstract: A capacitor, an array substrate and a method for manufacturing the same, and a display panel are provided. The capacitor includes a main body including a first pole plate and a second pole plate disposed opposite to each other, and the capacitor further includes at least one auxiliary body. Any one of the at least one auxiliary body includes a third pole plate and a fourth pole plate disposed opposite to each other, and neither the third pole plate nor the fourth pole plate extends in a plane where the first pole plate is located or a plane where the second pole plate is located. The main body is connected in parallel with the at least one auxiliary body. The array substrate includes a transistor and the capacitor provided by the present disclosure, and the transistor is electrically connected to the capacitor.
    Type: Application
    Filed: May 28, 2020
    Publication date: February 25, 2021
    Inventors: Tongshang SU, Dongfang WANG, Qinghe WANG
  • Patent number: 10930726
    Abstract: Provided are a display substrate and a preparation method thereof, a display panel, and a display device. The display substrate includes a substrate and a plurality of pixel units on the substrate. The pixel unit comprises a plurality of functional layers that are sequentially arranged in a direction away from the substrate. At least one of the plurality of functional layers, which is close to the substrate, constitutes a vertical thin film transistor (VTFT). At least one of the plurality of functional layers, which is away from the substrate, constitutes an organic light-emitting transistor (OLET). An orthographic projection region of the OLET on the substrate and an orthographic projection region of the VTFT on the substrate at least partially overlap.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: February 23, 2021
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Qinghe Wang, Liangchen Yan, Dongfang Wang, Tongshang Su, Jun Wang, Guangyao Li, Yang Zhang, Xuechao Sun
  • Publication number: 20210018377
    Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
    Type: Application
    Filed: May 17, 2019
    Publication date: January 21, 2021
    Inventors: Qinghe Wang, Dongfang Wang, Bin Zhou, Ce Zhao, Tongshang Su, Leilei Cheng, Yang Zhang, Guangyao Li
  • Publication number: 20210012692
    Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.
    Type: Application
    Filed: June 11, 2020
    Publication date: January 14, 2021
    Inventors: Jun Wang, Dongfang Wang, Liangchen Yan, Guangyao Li, Haitao Wang, Qinghe Wang, Yingbin Hu, Yang Zhang, Tongshang Su
  • Patent number: 10873661
    Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: December 22, 2020
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qinghe Wang, Dongfang Wang, Tongshang Su, Leilei Cheng, Wei Song, Yang Zhang, Ning Liu, Haitao Wang, Jun Wang, Guangyao Li
  • Patent number: 10818706
    Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: October 27, 2020
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tongshang Su, Guangcai Yuan, Dongfang Wang, Ce Zhao, Bin Zhou, Jun Liu, Jifeng Shao, Qinghe Wang, Yang Zhang
  • Patent number: 10818878
    Abstract: Disclosed are a manufacturing method of a flexible panel, a flexible panel and a display device. The manufacturing method of a flexible panel includes: forming a deformable material layer on a base substrate, the deformable material layer includes a shape memory material; forming a flexible panel body at a side of the deformable material layer away from the base substrate; driving the deformable material layer to allow the flexible panel body to be at least partially stripped; and stripping the base substrate.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: October 27, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dongfang Wang, Tongshang Su
  • Patent number: 10811627
    Abstract: Disclosed are a pixel defining layer and a manufacturing method thereof, and a display panel, in the field of display technologies. An auxiliary electrode pattern is on a side of a substrate and configured to be electrically connected to a cathode in a display panel; and a first sub-defining layer is on a side of the auxiliary electrode pattern away from the substrate. A pixel defining layer has a plurality of openings, and the plurality of openings all pass through the auxiliary electrode pattern and the first sub-defining layer. The opening is configured to accommodate a material of a light emitting layer. An orthographic projection of the auxiliary electrode pattern on the substrate is within an orthographic projection of the first sub-defining layer on the substrate.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: October 20, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dongfang Wang, Tongshang Su, Bin Zhou
  • Patent number: 10741787
    Abstract: A display back plate, a fabricating method for the same, and a display device are provided. The display back plate includes a substrate, a transparent heat conduction layer disposed on the substrate, and an array structure layer disposed on the heat conduction layer. The array structure layer includes a light shielding layer, a first thin film transistor, and a second thin film transistor, where the light shielding layer is disposed between the transparent heat conduction layer and the first thin film transistor.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: August 11, 2020
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tongshang Su, Dongfang Wang, Qinghe Wang, Ce Zhao, Bin Zhou, Liangchen Yan
  • Publication number: 20200251596
    Abstract: The disclosure relates to a thin film transistor. The thin film transistor may include a substrate, an active layer on the substrate, a gate on the active layer, and a source and a drain. The active layer may include a first conducting region, a second conducting region, and a channel region between the first conducting region and the second conducting region. An orthographic projection of the source and an orthographic projection of the drain on the substrate may cover at least an orthographic projection of a first conducting region and an orthographic projection of a second conducting region on the substrate.
    Type: Application
    Filed: August 7, 2019
    Publication date: August 6, 2020
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tongshang Su, Dongfang Wang, Jun Liu, Guangyao Li, Wei Li, Qinghe Wang, Chao Wang, Tao Sun
  • Patent number: 10727451
    Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: July 28, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dongfang Wang, Tongshang Su, Leilei Cheng
  • Publication number: 20200225582
    Abstract: The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.
    Type: Application
    Filed: April 25, 2018
    Publication date: July 16, 2020
    Inventors: Wei LI, Tongshang SU, Guangyao LI, Yingbin HU, Rui MA, Jifeng SHAO, Yang ZHANG, Jianye ZHANG
  • Patent number: 10707286
    Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: July 7, 2020
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qinghe Wang, Dongfang Wang, Tongshang Su, Rui Peng, Leilei Cheng, Yang Zhang, Jun Wang, Guangyao Li, Liangchen Yan, Guangcai Yuan
  • Publication number: 20200199740
    Abstract: A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.
    Type: Application
    Filed: August 1, 2019
    Publication date: June 25, 2020
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tongshang SU, Dongfang WANG, Leilei CHENG, Jun LIU, Ning LIU, Qinghe WANG, Liangchen YAN
  • Patent number: 10644043
    Abstract: Embodiments of this disclosure provide a thin film of poly-silicon and a method for fabricating the same, and a thin film transistor and a method for fabricating the same, where a metal layer, a buffer layer, and an amorphous-silicon layer are formed on an underlying substrate successively, and metal atoms of the metal layer can be diffused to come into contact with the amorphous-silicon layer, so that the amorphous-silicon can be converted into a poly-silicon layer under the catalysis of the metal ions.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: May 5, 2020
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Jun Liu, Tongshang Su
  • Patent number: 10615051
    Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: April 7, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Tongshang Su, Dongfang Wang, Jun Liu, Leilei Cheng, Wei Li, Qinghe Wang, Yang Zhang, Guangcai Yuan
  • Patent number: 10615196
    Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: April 7, 2020
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Jun Liu, Yongchao Huang, Tongshang Su, Leilei Cheng, Jun Wang, Ning Liu
  • Publication number: 20200106879
    Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.
    Type: Application
    Filed: April 18, 2019
    Publication date: April 2, 2020
    Inventors: Qinghe Wang, Dongfang Wang, Tongshang Su, Leilei Cheng, Wei Song, Yang Zhang, Ning Liu, Haitao Wang, Jun Wang, Guangyao Li
  • Publication number: 20200099013
    Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.
    Type: Application
    Filed: May 30, 2019
    Publication date: March 26, 2020
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dongfang WANG, Tongshang SU, Leilei CHENG