Abstract: Provided is a compound represented by the following general formula (I) or (II) or a pharmaceutically acceptable salt thereof, wherein A is a C6-C10 aryl group or a heteroaryl group, wherein at least one hydrogen atom of the aryl group or the heteroaryl group is optionally replaced with a substituent selected from a predetermined group, R is a hydrogen atom or a C1-C6 alkyl group, R1 is a hydrogen atom or a halogen atom, and Y is a hydrogen atom, a fluorine atom or a hydroxy group.

Abstract: Provided is an alkali-free glass substrate having a high strain point and excellent bubble count, and a method for manufacturing the alkali-free glass substrate. The method includes: a batch preparing process of preparing a raw material batch so as to obtain alkali-free glass containing, in mass %, 50 to 80% of SiO2, 15 to 30% of Al2O3, 0 to 4.5% of B2O3, 0 to 10% of MgO, 0 to 15% of CaO, 0 to 10% of SrO, 0 to 15% of BaO, 0 to 5% of ZnO, 0 to 5% of ZrO2, 0 to 5% of TiO2, 0 to 15% of P2O5 and 0 to 0.5% of SnO2 as a glass composition; a melting process of melting the prepared raw material batch; a fining process of fining the molten glass; and a forming process of forming the fined glass into a sheet shape. The raw material batch is melted such that a bubble enlarging temperature of the obtained glass is lower than a maximum temperature of the fining process.

Abstract: A manufacturing method for a glass article includes a supply step of supplying a glass raw material onto a surface of a molten glass accommodated in a melting chamber of a glass melting furnace from a supply unit mounted to a front wall of the melting chamber, and a melting step of melting the supplied glass raw material through heating with an electrode immersed in the molten glass in the melting chamber. The method also includes an outflow step of causing the molten glass to flow outside the melting chamber from an outflow port provided at a rear wall of the melting chamber, wherein 60% to 95% of an area of the surface of the molten glass in the melting chamber is covered with the glass raw material supplied in the supply step.

Abstract: A manufacturing method for a glass article includes a supply step of supplying a glass raw material onto a surface of a molten glass accommodated in a melting chamber of a glass melting furnace from a supply unit mounted to a front wall of the melting chamber, and a melting step of melting the supplied glass raw material through heating with an electrode immersed in the molten glass in the melting chamber. The method also includes an outflow step of causing the molten glass to flow outside the melting chamber from an outflow port provided at a rear wall of the melting chamber, wherein 60% to 95% of an area of the surface of the molten glass in the melting chamber is covered with the glass raw material supplied in the supply step.

Abstract: Provided is a manufacturing method for a glass article, including: a glass melting step of continuously melting glass raw materials (Gr) in a glass melting furnace (1) by heating (electric heating) through application of a current with an electrode (11) to generate a molten glass (Gm); and a forming step of forming the molten glass (Gm) into a sheet glass by a down-draw method. The glass melting step includes adjusting a water vapor amount in an atmosphere in the glass melting furnace (1) to 15 g/Nm3 or less.

Abstract: A message monitoring system includes a first electronic control unit and a second electronic control unit connected to the first electronic control unit via a communication network. In the first electronic control unit, a first message is generated; a first feature value representing a feature of the first message is calculated; a second message storing the first feature value is generated; and the first message is transmitted whereas the second message is transmitted periodically. In the second electronic control unit, the first message and the second message are received from the first electronic control unit; a second feature value representing a feature of the received first message is calculated; and a comparison is performed between (i) the first feature value stored in the received second message and (ii) the calculated second feature value; and whether the first message is normal is determined based on a result of the comparison.

Abstract: Provided is an alkali-free glass substrate having a high strain point and excellent bubble count, and a method for manufacturing the alkali-free glass substrate. The method includes: a batch preparing process of preparing a raw material batch so as to obtain alkali-free glass containing, in mass %, 50 to 80% of SiO2, 15 to 30% of Al2O3, 0 to 4.5% of B2O3, 0 to 10% of MgO, 0 to 15% of CaO, 0 to 10% of SrO, 0 to 15% of BaO, 0 to 5% of ZnO, 0 to 5% of ZrO2, 0 to 5% of TiO2, 0 to 15% of P2O5 and 0 to 0.5% of SnO2 as a glass composition; a melting process of melting the prepared raw material batch; a fining process of fining the molten glass; and a forming process of forming the fined glass into a sheet shape. The raw material batch is melted such that a bubble enlarging temperature of the obtained glass is lower than a maximum temperature of the fining process.

Abstract: Provided is a method for aiding diagnosis of a neurodegenerative disease in a subject with a light physical burden. The method for aiding diagnosis of the neurodegenerative disease, comprising: a first assessment step of assessing a risk of the neurodegenerative disease based on an amount of homocysteine acid in a biological sample obtained from the subject; a second assessment step of assessing a risk of the neurodegenerative disease based on an amount of an inflammatory factor, a pituitary gland secretion, or an autonomic nerve secretion in the biological sample obtained from the subject or based on a measured value obtained from a brain image of the subject; and a step of determining whether the subject has the neurodegenerative disease based on the results of the first assessment and the second assessment.

Abstract: A method for manufacturing an alkali-free glass substrate capable of manufacturing an alkali-free glass substrate having a higher strain point by decreasing the ?-OH value of the glass is provided. The method for manufacturing an alkali-free glass substrate is a method for continuously manufacturing a SiO2—Al2O3—RO (RO is one or more of MgO, CaO, BaO, SrO, and ZnO) based alkali-free glass substrate, which includes a step of preparing a raw material batch containing a tin compound and substantially not containing an arsenic compound or an antimony compound, a step of electric melting the prepared raw material batch in a melting furnace capable of conducting electric heating by a molybdenum electrode, and a step of forming the molten glass into a plate shape by a downdraw method.

Abstract: A battery holding structure includes a battery tray for storing a battery therein. A battery holding rack is configured to store the battery tray with the battery stored therein and to allow the battery tray to be pulled out along widthwise directions of the vehicle. A ground wire has one end connected to a negative terminal of the battery and another end connected to a grounding member on a vehicle frame. A movement prevention member fixes the other end of the ground wire to the battery tray and prevents the battery tray from being pulled out to one side along the widthwise directions of the vehicle with the ground wire which is connected to the grounding member.

Abstract: Systems and methods for computer-aided or virtual drafting and design are described. Such systems and methods provide a virtual drafting space with the capability of providing multiple layers, magnifications, and scale sensitivity such that a draftsperson can navigate through the virtual drafting space through simple touch commands on a multi-touch interactive screen or through other inputs. As the draftsperson changes the magnification environment of the drawing, the systems and methods provide a set of drafting instruments calibrated for use with the particular environment chosen and scale within that environment, including a stencil capable of being locked to correlate to its scale in the virtual environment regardless of magnification level.

Abstract: A glass tube cleaning and cutting device includes a glass tube cutting device configured to cut an end portion of a glass tube while the glass tube cutting device rotates the glass tube having a predetermined length about a tube axis of the glass tube and conveys the glass tube in a direction orthogonal to the tube axis, at least one blower configured to blow air into an opening located on a first end portion side of the glass tube, and at least one cutting blade provided at a position opposite to the at least one blower interposing the glass tube therebetween, the at least one cutting blade being configured to impose thermal shock and scratches on an outer circumference surface of a second end portion side of the glass tube to cut the second end portion side of the glass tube.

Abstract: In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.

Abstract: A glass tube cleaning and cutting device and a method for same configured to cut a continuous glass tube at a predetermined length by intermittently contacting a cutting blade with the outer circumference surface of the continuously travelling continuous glass tube formed by tube pulling while blowing air to impose scratches and thermal shock on the outer circumference surface of the continuous glass tube so as to obtain a plurality of cut-off glass tubes, the glass tube cleaning and cutting device includes: a blower provided on a more downstream side of the travelling continuous glass tube than the cutting blade, the blower being configured to blow opposing air opposed to air into a tip end opening of the continuous glass tube.

Abstract: Provided is a brain function-improving composition which can inhibit binding of homocysteic acid to a receptor (NMDA receptor) and, at the same time, decrease the binding ability of homocysteic acid per se to the receptor to thereby improve reduction in the brain function caused by the toxicity of homocysteic acid. The brain function-improving composition comprises 0.3-0.5 part by weight of a cinnamic acid derivative compound and 0.5-0.7 part by weight of a calcium hydride powder. Also, the brain function-improving composition is characterized by further comprising 0.4-0.6 part by weight of a green tea powder, 0.4-0.6 part by weight of a cocoa powder, 0.25-0.35 part by weight of a hydroxysilica powder, and 0.9-1.1 parts by weight of a dry Angelica shikokiana Makino powder.

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

Abstract: When the priority class is set to a mobile terminal that has moved from cell to cell and even if an HLR is in a congestion state, a communication service is provided to the mobile terminal on a priority basis. A location registration signal, which is transmitted from a mobile terminal (2) that has moved from another area, and which is to be transmitted to an HLR (30), is received, and the apparatus corresponding to the movement source area is identified based upon the content of the location registration signal. Priority class information indicating whether the transmission process to the HLR is a priority process or a non-priority process is acquired from the identified another mobile communication control apparatus (200), and whether or not the location registration signal should be transmitted to the HLR (30) is determined based upon the acquired priority class information.

Abstract: A battery holding structure includes a battery tray for storing a battery therein. A battery holding rack is configured to store the battery tray with the battery stored therein and to allow the battery tray to be pulled out along widthwise directions of the vehicle. A ground wire has one end connected to a negative terminal of the battery and another end connected to a grounding member on a vehicle frame. A movement prevention member fixes the other end of the ground wire to the battery tray and prevents the battery tray from being pulled out to one side along the widthwise directions of the vehicle with the ground wire which is connected to the grounding member.

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.