Patents by Inventor Toru HISAMATSU
Toru HISAMATSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955337Abstract: A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.Type: GrantFiled: July 12, 2019Date of Patent: April 9, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Toru Hisamatsu, Takayuki Katsunuma, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda
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Patent number: 11823903Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.Type: GrantFiled: December 22, 2021Date of Patent: November 21, 2023Assignee: Tokyo Electron LimitedInventors: Yoshihide Kihara, Toru Hisamatsu, Tomoyuki Oishi
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Publication number: 20230122980Abstract: An apparatus for processing a substate includes: a chamber having a gas inlet and a gas outlet; a substrate support disposed in the chamber; a plasma generator; and a controller programmed to: (a) place a substrate on the substrate support, the substrate having a pattern, (b) supply a first reactive species into the chamber to adsorb the first reactive species onto the pattern of the substrate, (c) partially purge the first reactive species from the chamber to adjust an amount of a residual first reactive species in the chamber, (d) supply a second reactive species into the chamber, and (e) expose the substrate to a plasma generated from the residual first reactive species and the second reactive species by the plasma generator to form a film on the pattern of the substrate.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Applicant: Tokyo Electron LimitedInventors: Kae KUMAGAI, Toru HISAMATSU, Masanobu HONDA
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Patent number: 11594422Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.Type: GrantFiled: August 23, 2021Date of Patent: February 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Takayuki Hoshi, Masanobu Honda, Masahiro Tabata, Toru Hisamatsu
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Publication number: 20230035391Abstract: A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which as underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing as anisotropic deposition to selectively form a deposition layer on a top portion of the mask.Type: ApplicationFiled: October 7, 2022Publication date: February 2, 2023Applicant: Tokyo Electron LimitedInventors: Toru HISAMATSU, Masanobu HONDA, Yoshihide KIHARA
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Publication number: 20230018151Abstract: An apparatus for processing a substrate for processing a substrate includes: one or more processing chambers, a plasma generator, and a controller. The controller causes (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region through the patterned region using plasma generated from a processing gas. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer. In (b2), the precursor layer is modified by plasma generated from the second gas.Type: ApplicationFiled: September 19, 2022Publication date: January 19, 2023Applicant: Tokyo Electron LimitedInventors: Shinya Ishikawa, Toru Hisamatsu
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Patent number: 11557485Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.Type: GrantFiled: June 24, 2021Date of Patent: January 17, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Toru Hisamatsu, Kensuke Taniguchi, Yoshinari Hatazaki
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Publication number: 20230010069Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: ApplicationFiled: August 18, 2022Publication date: January 12, 2023Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Patent number: 11545355Abstract: A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).Type: GrantFiled: November 13, 2020Date of Patent: January 3, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kae Kumagai, Toru Hisamatsu, Masanobu Honda
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Publication number: 20220411928Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.Type: ApplicationFiled: August 31, 2022Publication date: December 29, 2022Applicant: Tokyo Electro LimitedInventors: Michiko NAKAYA, Toru Hisamatsu, Shinya Ishikawa, Sho Kumakura, Masanobu Honda, Yoshihide Kihara
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Publication number: 20220375724Abstract: A plasma processing method includes: (a) mounting a substrate including a first mask layer, which is a removal target, formed on a first layer with a metal-containing layer that is included therein to be partially exposed, on a stage disposed inside a processing container of the plasma processing apparatus; (b) supplying a process gas containing one or more of fluorocarbon gas and hydrofluorocarbon gas into the processing container; (c) supplying a first radio-frequency power that forms a plasma from the process gas into the processing container; (d) supplying a second radio-frequency power having a frequency lower than a frequency of the first radio-frequency power to the stage after a predetermined time is elapsed from stop of the first radio-frequency power; and (e) repeating (c) and (d).Type: ApplicationFiled: May 20, 2022Publication date: November 24, 2022Applicant: Tokyo Electron LimitedInventors: Manabu OIE, Takanori BANSE, Toru HISAMATSU
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Patent number: 11495469Abstract: A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.Type: GrantFiled: December 1, 2020Date of Patent: November 8, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Toru Hisamatsu, Masanobu Honda, Yoshihide Kihara
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Patent number: 11488836Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: GrantFiled: August 21, 2020Date of Patent: November 1, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Patent number: 11469111Abstract: A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.Type: GrantFiled: September 30, 2020Date of Patent: October 11, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Shinya Ishikawa, Toru Hisamatsu
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Patent number: 11459655Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.Type: GrantFiled: July 26, 2019Date of Patent: October 4, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Michiko Nakaya, Toru Hisamatsu, Shinya Ishikawa, Sho Kumakura, Masanobu Honda, Yoshihide Kihara
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Publication number: 20220122802Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.Type: ApplicationFiled: December 29, 2021Publication date: April 21, 2022Applicant: TOKYO ELECTRON LIMITEDInventors: Daisuke NISHIDE, Toru HISAMATSU, Shinya ISHIKAWA
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Publication number: 20220122840Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.Type: ApplicationFiled: December 22, 2021Publication date: April 21, 2022Applicant: Tokyo Electron LimitedInventors: Yoshihide KIHARA, Toru HISAMATSU, Tomoyuki OISHI
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Publication number: 20220115235Abstract: A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.Type: ApplicationFiled: July 12, 2019Publication date: April 14, 2022Applicant: TOKYO ELECTRON LIMITEDInventors: Toru HISAMATSU, Takayuki KATSUNUMA, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA
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Publication number: 20220093406Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.Type: ApplicationFiled: December 2, 2021Publication date: March 24, 2022Applicant: Tokyo Electron LimitedInventors: Yuki IIJIMA, Toru HISAMATSU, Kae KUMAGAI
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Patent number: 11264236Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.Type: GrantFiled: December 13, 2019Date of Patent: March 1, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Toru Hisamatsu, Takayuki Katsunuma, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda