Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

Abstract: There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113, hydrogen is supplied to the side of the other electrode 112, and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.

Abstract: A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.

Abstract: A layered body having a single crystal layer including a group III nitride having a composition AlxGayInzN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9?X?1.0, 0.0?Y?0.1, 0.0?Z?0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×1020 cm?3 or more and 5×1021 cm?3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.

Abstract: A composite wavelength conversion powder and a resin composition containing a composite wavelength conversion powder which have high utilization efficiency of light and high utilization efficiency of a constituent material, and are able to make highly efficient light emission and high reliability compatible are provided. The composite wavelength conversion powder is formed by dispersing phosphor particles having a refractive index of 1.6 or more in matrix particles containing fine magnesium fluoride particles or fine calcium fluoride particles.

Abstract: A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.

Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

Abstract: A method for forming an n-type contact electrode, which includes an n-type nitride semiconductor such as AlxInyGazN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0<x?1.0, 0?y?0.1, and 0?z<1.0), includes: a step in which a first electrode metal layer including at least one metal selected from titanium, vanadium, and tantalum is formed on a layer of the aforementioned n-type semiconductor and then heat-treated at a temperature between 800° C. and 1200° C.; and a step in which a second electrode metal layer is formed on top of the first electrode metal layer and then heat-treated at a temperature between 700° C. and 1000° C. The second electrode metal layer contains a layer comprising a metal, such as aluminum, that has a work function between 4.0 and 4.8 eV and a resistivity between 1.5×10?6 ?·cm and 4.0×10?6 ?·cm.

Abstract: Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method.

Abstract: A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.

Abstract: A method for forming an n-type contact electrode comprising an n-type nitride semiconductor such as AlxInyGazN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0<x?1.0, 0?y?0.1, and 0?z<1.0) includes: a step in which a first electrode metal layer including at least one metal selected from titanium, vanadium, and tantalum is formed on a layer of the aforementioned n-type semiconductor and then heat-treated at a temperature between 800° C. and 1200° C.; and a step in which a second electrode metal layer is formed on top of the first electrode metal layer and then heat-treated at a temperature between 700° C. and 1000° C. The second electrode metal layer contains a layer comprising a metal, such as aluminum, that has a work function between 4.0 and 4.8 eV and a resistivity between 1.5×10?6 ?·cm and 4.0×10?6 ?·cm.

Abstract: Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method.

Abstract: This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlXGaYInZN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X?0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm?3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

Abstract: A production method of a layered body having a single crystal layer including a group III nitride having a composition AlXGaYInZN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9?X?1.0, 0.0?Y?0.1, 0.0?Z?0.1, and X+Y+Z=1.

Abstract: The present invention provides a transparent inorganic oxide dispersion which makes it possible to improve the refractive index and mechanical characteristics and to maintain transparency by modifying the surface of inorganic oxide particles with a surface modifier having one or more reactive functional groups; and an inorganic oxide particle-containing resin composition in which the transparent inorganic oxide dispersion and a resin are compositely integrated by the polymerization reaction, a composition for sealing a light emitting element, a light emitting element, and a method for producing an inorganic oxide particle-containing resin composition; and a hard coat film which has high transparency and makes it possible to improve a refractive index and tenacity, an optical functional film, an optical lens and an optical component.

Abstract: A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Abstract: This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X?0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm?3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

Abstract: A composite ceramic powder, which is excellent in uniform distribution at a nanometer level, composition controllability, and generation of oxygen ions or electron conductivity, a process of producing the composite ceramic powder, and a solid-oxide fuel cell, are provided. The composite ceramic powder includes oxide expressed by A1-xBxC1-yDyO3 (where A represents one or two elements selected from the group consisting of La and Sm; B represents one or two or more elements selected from the group consisting of Sr, Ca, and Ba; C represents one or two elements selected from the group consisting of Co and Mn; D represents one or two elements selected from the group consisting of Fe and Ni; and x and y satisfy 0.1?x?0.5 and 0?y?0.3) or nickel oxide and zirconia.

Abstract: A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.

Abstract: A sealing device for an elevator door includes a doorway member, doors, a movable member, a push-down mechanism and a sealing mechanism. The doorway member is provided for a gate. The doors open or close along the doorway member. The movable member is set horizontally and provided to be movable in a vertical direction in the doorway member, and it is urged upwards by an urging unit. The push-down mechanism pushes down the movable member against the force of the urging unit just before the doors are closed. The sealing mechanism is kept non-contact with the doors while they are moving, and seals the gap between the doors and the doorway member as it is brought into contact with upper section of the doors when the movable member is pushed down by the push-down mechanism.