Abstract: An aspect of the disclosure relates to a semiconductor device including a semiconductor element, a connection terminal configured to output a signal based on an output of the semiconductor element, a protection circuit connected to the connection terminal, and a voltage limiting element connected to the connection terminal, wherein the protection circuit is connected to a first power supply line having a first potential and a second power supply line having a second potential lower than the first potential, and wherein a potential supplied to the voltage limiting element is higher than the second potential and lower than the first potential.

Abstract: An image capturing apparatus performs a global electronic shutter operation in which a plurality of pixels are exposed during the same exposure period. In a first period, charge is accumulated by a photoelectric conversion unit. In a second period, accumulation units of a plurality of pixels accumulate charge. A ratio of saturation charge quantity of the photoelectric conversion unit to saturation charge quantity of the accumulation unit has a certain relationship with a ratio of a length of the first period to the sum of the length of the first period and the length of the second period.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A photoelectric conversion apparatus includes a pixel. The pixel includes a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The photoelectric conversion apparatus includes a control line, a voltage control unit, and a current source. The control line is electrically connected to a source of the amplification transistor. The voltage control unit controls the voltage of the control line. The current source outputs a reference current. A path of a current from the amplification transistor is separated from a path of the reference current. The photoelectric conversion apparatus includes a comparison unit configured to compare the current from the amplification transistor with the reference current. During a period in which a transistor connected to the gate of the amplification transistor is in a conductive state, the selection transistor is in a non-conductive state.

Abstract: A solid-state imaging device includes pixels each of which includes a photoelectric converter configured to generate charges by photoelectric conversion, a holding unit configured to hold charges generated by the photoelectric converter, and a transfer unit configured to transfer charges from the photoelectric converter to the holding unit, and outputs a signal based on charges in the holding unit, a transfer control unit configured to control the transfer unit to transfer charges generated by the photoelectric converter during one exposure period to the holding unit by a variable number, which is one or greater, of transfer operations, an amplifier unit configured to amplify the signal, and a control unit configured to control a gain of the amplifier unit to be a first gain when the number of transfer operations is first number and to be a second gain when the number of transfer operations is a second number.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A solid-state imaging device includes pixels including a photoelectric converter, a holding portion, and a transfer unit transferring charges from the photoelectric converter to the holding portion, and outputting a signal based on charges held in the holding portion, a signal line the signal is output from the pixels, a clipping unit limiting signal level so that it falls within a range having an upper limit or a lower limit determined by a clipping level, a transfer control unit controlling the transfer unit so that the charges generated during one exposure period are transferred through transfer operation performed at frequency variable but at least once, and a clipping level control unit controlling so that the clipping level is set to first clipping level when the transfer operation is performed at first frequency, and is set to second clipping level when the transfer operation is performed at second frequency.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: Provided is a solid-state image pickup element including: a plurality of pixels arranged in a pixel well region; a readout circuit arranged in a peripheral well region, having a first input terminal for receiving the pixel signals from the plurality of pixels and a second input terminal for receiving a reference signal; and a reference signal circuit arranged in the peripheral well region, having a first electrode to which a ground voltage is supplied, and being configured to output the reference signal to the second input terminal of the readout circuit, wherein a resistance value R1 of an electrical path from one of a plurality of pixel well contacts to the first electrode and a resistance value R2 of an electrical path from one of a plurality of peripheral well contacts closest to the first electrode to the first electrode satisfy a relationship of R1<R2.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A photoelectric conversion device includes a photoelectric converter, a transistor having a gate to which a voltage corresponding to charges generated by the photoelectric converter is supplied, a control line connected to a first main electrode of the transistor, and a readout unit configured to read out a signal corresponding to a voltage of the gate, and a voltage controller configured to change a voltage of the control line. The readout unit generates a digital signal corresponding to the voltage of the gate, based on a current flowing through a second main electrode of the transistor during a period in which the voltage controller changes the voltage of the control line.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having one principle surface including recessed portions, and insulation bodies in the recessed portions. The semiconductor substrate includes photoelectric conversion elements each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the second conductivity type which has at least a portion disposed nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: The imaging apparatuses according to the embodiments perform an operation of outputting a plurality of signals from pixels to an output line a plurality of times. In each operation, both of first and second transfer switches are brought into an on state so that a discharge operation of discharging charge of a photoelectric conversion unit through a holding unit is performed. In a first period, the photoelectric conversion unit of at least one of the pixels accumulates charge. The operation performed a plurality of times includes a first operation and a second operation to be performed after the first operation. After the output operation in the first operation is terminated, the discharge operation in the second operation is performed.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: Provided is a solid-state image pickup element including: a plurality of pixels arranged in a pixel well region; a readout circuit arranged in a peripheral well region, having a first input terminal for receiving the pixel signals from the plurality of pixels and a second input terminal for receiving a reference signal; and a reference signal circuit arranged in the peripheral well region, having a first electrode to which a ground voltage is supplied, and being configured to output the reference signal to the second input terminal of the readout circuit, wherein a resistance value R1 of an electrical path from one of a plurality of pixel well contacts to the first electrode and a resistance value R2 of an electrical path from one of a plurality of peripheral well contacts closest to the first electrode to the first electrode satisfy a relationship of R1<R2.