Patents by Inventor Toru Nagashima

Toru Nagashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210341622
    Abstract: A first light emitting element emits first detecting light toward the outside of a vehicle. A second light emitting element emits second detecting light toward the outside of the vehicle. A first light receiving element outputs a first signal corresponding to an amount of incident light. A second light receiving element outputs a second signal corresponding to an amount of incident light. A processor acquires first data corresponding to the first signal and second data corresponding to the second signal, and exchanges the first data and the second data in a case where the first data is based on the second detecting light and the second data is based on the first detecting light.
    Type: Application
    Filed: July 18, 2019
    Publication date: November 4, 2021
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventors: Toru NAGASHIMA, Shuki YAMAMOTO
  • Publication number: 20210311191
    Abstract: A scanning device includes a motor and a mirror attached to the motor and configured to reflect emitted light of a light source. The scanning device is configured to scan probe light, which is reflected light reflected by the mirror, according to the rotation of the motor. A photosensor detects return light, which is light reflected from a point on an object. A processor detects the distance to the point on the object based on the output of the photosensor. A distance measurement sensor changes the angular resolution according to the distance to the object.
    Type: Application
    Filed: May 27, 2021
    Publication date: October 7, 2021
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventor: Toru NAGASHIMA
  • Publication number: 20210295065
    Abstract: An object identification system includes a camera and a processing device. The processing device includes a classifier subjected to machine learning based on the output image of the camera so as to allow it to identify an object. A gating camera divides a field of view in the depth direction into multiple ranges, and captures an image while changing the time difference between light projection and exposure for each range. The classifier is subjected to machine learning using multiple images IMG1 through IMGN generated by the gating camera as the learning data.
    Type: Application
    Filed: June 9, 2021
    Publication date: September 23, 2021
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventors: Kensuke ARAI, Toru NAGASHIMA, Koji ITABA, Jun KANO
  • Publication number: 20210286081
    Abstract: A vehicular object identification system includes a distance sensor and a processing device. The distance sensor scans a single beam in the horizontal direction so as to measure the distances to points on the surface of an object OBJ. The processing device includes a classifier that is capable of identifying the kind of the object OBJ based on point cloud data PCD that corresponds to the single scan line acquired by the distance sensor. The classifier is implemented based on a learned model generated by machine learning. The machine learning is executed using multiple items of point cloud data that correspond to multiple scan lines acquired by measuring a predetermined object by means of a LiDAR that supports the multiple scan lines in the vertical direction.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 16, 2021
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventor: Toru NAGASHIMA
  • Publication number: 20200410262
    Abstract: A three-dimensional sensor generates multiple items of line data with respect to multiple horizontal lines arranged at different heights. Multiple first neural networks each generate first intermediate data relating to a corresponding item from among the multiple items of line data. Each first intermediate data indicates the probability of matching between the corresponding line data and each of multiple portions of multiple kinds. A combining processing unit receives the multiple items of first intermediate data, and combines the first intermediate data thus received so as to generate at least one item of second intermediate data. A second neural network receives the at least one item of second intermediate data, and generates final data that indicates the probability of matching between the object and each of the multiple kinds.
    Type: Application
    Filed: September 15, 2020
    Publication date: December 31, 2020
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventor: Toru NAGASHIMA
  • Patent number: 10822718
    Abstract: A method for producing an AlN single crystal substrate, the method including: i) preparing a first base substrate consisting of a first AlN single crystal; ii) growing a first AlN single crystal layer over a main face of the first base substrate, to obtain a layered body; iii) cutting the first MN single crystal layer of the layered body, to separate the layered body into a second base substrate and a first part of the first AlN single crystal layer, the second base substrate including the first base substrate and a thin film layered thereon, the thin film being a second part of the first AlN single crystal layer; iv) polishing a surface of the thin film, to obtain a third base substrate consisting of a second AlN single crystal; and v) growing a second AlN single crystal layer over the polished surface of the third base substrate.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: November 3, 2020
    Assignee: TOKUYAMA CORPORATION
    Inventors: Toru Nagashima, Reiko Okayama, Masayuki Fukuda, Hiroyuki Yanagi
  • Publication number: 20200299862
    Abstract: A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (?A??B)/?B is within the range of ±0.1%, wherein ?A is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and ?B is an average value of peak wave numbers of micro-Raman spectra in the outer region.
    Type: Application
    Filed: September 21, 2018
    Publication date: September 24, 2020
    Applicant: TOKUYAMA CORPORATION
    Inventors: Masayuki FUKUDA, Toru NAGASHIMA
  • Publication number: 20200255030
    Abstract: A sensing system provided in a vehicle capable of running in an autonomous driving mode, includes: a LiDAR unit configured to acquire point group data indicating surrounding environment of the vehicle; and a LiDAR control module configured to identify information associated with a target object existing around the vehicle, based on the point group data acquired from the LiDAR unit. The LiDAR control module is configured to control the LiDAR unit so as to increase a scanning resolution of the LiDAR unit in a first angular area in a detection area of the LiDAR unit, wherein the first angular area is an area where the target object exists.
    Type: Application
    Filed: October 24, 2018
    Publication date: August 13, 2020
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventors: Shuki YAMAMOTO, Toru NAGASHIMA, Misako KAMIYA, Shunsuke OKAMURA
  • Publication number: 20200183007
    Abstract: A recognition sensor includes a three-dimensional sensor and a controller. The three-dimensional sensor scans a scan beam in the horizontal direction, and measures the distance up to each of multiple measurement points defined on a scan line. The controller corrects the elevation angle of the three-dimensional sensor such that the height of a correction point, which is selected from among the multiple measurement points, approaches a predetermined value.
    Type: Application
    Filed: February 17, 2020
    Publication date: June 11, 2020
    Applicant: KOITO MANUFACTURING CO., LTD.
    Inventor: Toru NAGASHIMA
  • Publication number: 20190287799
    Abstract: An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.
    Type: Application
    Filed: May 24, 2019
    Publication date: September 19, 2019
    Applicant: TOKUYAMA CORPORATION
    Inventors: Toru NAGASHIMA, Masayuki FUKUDA
  • Patent number: 10354862
    Abstract: An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: July 16, 2019
    Assignee: TOKUYAMA CORPORATION
    Inventors: Toru Nagashima, Masayuki Fukuda
  • Publication number: 20190093255
    Abstract: A method for producing an AlN single crystal substrate, the method including: i) preparing a first base substrate consisting of a first AlN single crystal; ii) growing a first AlN single crystal layer over a main face of the first base substrate, to obtain a layered body; iii) cutting the first MN single crystal layer of the layered body, to separate the layered body into a second base substrate and a first part of the first AlN single crystal layer, the second base substrate including the first base substrate and a thin film layered thereon, the thin film being a second part of the first AlN single crystal layer; iv) polishing a surface of the thin film, to obtain a third base substrate consisting of a second AlN single crystal; and v) growing a second AlN single crystal layer over the polished surface of the third base substrate.
    Type: Application
    Filed: March 22, 2017
    Publication date: March 28, 2019
    Applicant: TOKUYAMA CORPORATION
    Inventors: Toru NAGASHIMA, Reiko OKAYAMA, Masayuki FUKUDA, Hiroyuki YANAGI
  • Patent number: 9840790
    Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: December 12, 2017
    Assignees: Hexatech, Inc., National University Corporation Tokyo University of Agriculture and Technology, Tokuyama Corporation
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Yuki Kubota, Rafael F. Dalmau, Jinqiao Xie, Baxter F. Moody, Raoul Schlesser, Zlatko Sitar
  • Publication number: 20170330745
    Abstract: An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.
    Type: Application
    Filed: November 9, 2015
    Publication date: November 16, 2017
    Applicant: TOKUYAMA CORPORATION
    Inventors: Toru NAGASHIMA, Masayuki FUKUDA
  • Patent number: 9806205
    Abstract: A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 ?m; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: October 31, 2017
    Assignee: Tokuyama Corporation
    Inventors: Toru Kinoshita, Toru Nagashima
  • Patent number: 9748410
    Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: August 29, 2017
    Assignee: Tokuyama Corporation
    Inventors: Toru Kinoshita, Toshiyuki Obata, Toru Nagashima
  • Publication number: 20170222064
    Abstract: A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 ?m; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.
    Type: Application
    Filed: July 21, 2015
    Publication date: August 3, 2017
    Applicant: Tokuyama Corporation
    Inventors: Toru Kinoshita, Toru Nagashima
  • Patent number: 9708733
    Abstract: The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0: H=VH/(VH+VAl)??(1) (In the formula (1), VH represents a supply of the halogen-based gas; and VAl represents a supply of the aluminum halide gas); and a growth rate of the aluminum-based group III nitride single crystal is no less than 10 ?m/h.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: July 18, 2017
    Assignee: TOKUYAMA CORPORATION
    Inventors: Akinori Koukitsu, Yoshinao Kumagai, Toru Nagashima, Reiko Okayama
  • Patent number: 9691942
    Abstract: The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm?1 or less.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: June 27, 2017
    Assignees: National University Corporation Tokyo University of Agriculture and Technology, Tokuyama Corporation
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Yuki Hiraren
  • Publication number: 20160254391
    Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.
    Type: Application
    Filed: October 15, 2014
    Publication date: September 1, 2016
    Applicant: TOKUYAMA CORPORATION
    Inventors: Toru Kinoshita, Toshiyuki Obata, Toru Nagashima