Abstract: A pedal reaction force applying device includes an acceleration pedal used in a stepping-in operation and a returning operation, a motor configured to apply a pedal reaction force acting on an acceleration pedal in the stepping-in operation and the returning operation, a power transmitting device provided between the acceleration pedal and the motor and including a speed-reduction mechanism, an operation direction determiner configured to determine an operation direction of the acceleration pedal, and a reaction force controller configured to control the pedal reaction force on the acceleration pedal. The reaction force controller controls a magnitude of the pedal reaction force by controlling a power of the motor based on the operation direction of the acceleration pedal determined by the operation direction determiner.

Abstract: A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Abstract: A display including a light-emitting element is provided. The light-emitting element includes a lower display electrode, an organic layer including a light-emitting layer, and an upper display electrode, wherein the lower display electrode is formed in a source-drain electrode layer or a gate electrode layer. A method of manufacture and an electronic device including the display are also provided.

Abstract: A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Abstract: A pedal reaction force applying device includes an acceleration pedal used in a stepping-in operation and a returning operation, a motor configured to apply a pedal reaction force acting on an acceleration pedal in the stepping-in operation and the returning operation, a power transmitting device provided between the acceleration pedal and the motor and including a speed-reduction mechanism, an operation direction determiner configured to determine an operation direction of the acceleration pedal, and a reaction force controller configured to control the pedal reaction force on the acceleration pedal. The reaction force controller controls a magnitude of the pedal reaction force by controlling a power of the motor based on the operation direction of the acceleration pedal determined by the operation direction determiner.

Abstract: A display device includes a first electrode, an organic layer including a light emitting region, and a second electrode. The display device also includes a conductive layer electrically connected to the second electrode and including an opening corresponding to the light emitting region.

Abstract: A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.

Abstract: A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

Abstract: A thin-film transistor includes: a gate electrode; a gate insulating film disposed on the gate electrode; an oxide semiconductor layer disposed on the gate insulating film and having a channel region located to face the gate electrode; a channel protective layer disposed on the gate insulating film and the oxide semiconductor layer; and source and drain electrodes each connected to the oxide semiconductor layer through a connection hole formed in the channel protective layer, in which the oxide semiconductor layer has, in a part of the channel region, a narrow region with a narrower width than a width of the connection hole.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

Abstract: A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

Abstract: There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.

Abstract: A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.

Abstract: A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

Abstract: A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.

Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.

Abstract: A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.

Abstract: Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.