Patents by Inventor Toshiaki Sasaki
Toshiaki Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230032229Abstract: A power management system for managing a predetermined facility including a power generator includes a receiver for receiving a message including a first information element for identifying a right holder for a moving body and a second information element for identifying a right holder for the power generator when charging of a power storage device provided in the moving body is performed by power generated by the power generator, and a controller for identifying an attribution subject of an environmental value generated by the charging of the power storage device based on the first information element and the second information element.Type: ApplicationFiled: December 25, 2020Publication date: February 2, 2023Inventors: Issei SUZUKI, Toshiaki SASAKI
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Patent number: 10889244Abstract: The lighting control device includes a controller, a diagnosis circuit, a latch circuit, and a logic circuit. The controller outputs a control signal. The diagnosis circuit outputs an irregular signal. The latch circuit decides a state of a forcibly lighting signal. The logic circuit controls a light source in accordance with an ignition signal, the control signal, and the forcibly lighting signal. The logic circuit turns on the light source in accordance with the ignition signal while receiving the forcibly lighting signal, and turns on the light source in accordance with the control signal while not receiving the forcibly lighting signal.Type: GrantFiled: August 18, 2016Date of Patent: January 12, 2021Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Masatoshi Ueno, Masaaki Takamatsu, Toshiaki Sasaki, Kazuya Kato
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Patent number: 10177259Abstract: Provided is a solar cell module which has a high anti-glare property and is capable of maintaining power output at a high level. In a solar cell module with a light-incident surface formed by laminating an antireflection film on a plate body made of glass, and a surface of the plate body is roughened. A substance for forming the antireflection film is introduced into a space formed in a crack situated slightly inside from the roughened surface. Formation of a layer of air in the crack is prevented to suppress reflection of light at a portion in which the crack is formed.Type: GrantFiled: June 13, 2014Date of Patent: January 8, 2019Assignee: KANEKA CORPORATIONInventors: Toshiaki Sasaki, Toshinobu Nakata
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Publication number: 20170072837Abstract: The lighting control device includes a controller, a diagnosis circuit, a latch circuit, and a logic circuit. The controller outputs a control signal. The diagnosis circuit outputs an irregular signal. The latch circuit decides a state of a forcibly lighting signal. The logic circuit controls a light source in accordance with an ignition signal, the control signal, and the forcibly lighting signal. The logic circuit turns on the light source in accordance with the ignition signal while receiving the forcibly lighting signal, and turns on the light source in accordance with the control signal while not receiving the forcibly lighting signal.Type: ApplicationFiled: August 18, 2016Publication date: March 16, 2017Inventors: Masatoshi UENO, Masaaki TAKAMATSU, Toshiaki SASAKI, Kazuya KATO
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Patent number: 9346171Abstract: A substrate transport apparatus including a first substrate holder and a second substrate holder capable of respectively holding substrates includes a first drive arm which has first and second end portions, and is rotatable with rotation of a first drive shaft, a second drive arm which has a third end portion spaced apart from the first end portion by a first distance, and a fourth end portion spaced apart from the second end portion by a second distance, and is rotatable with rotation of a second drive shaft coaxial with the first drive shaft, two first driven arms coupled to the first substrate holder, and two second driven arms coupled to the second substrate holder.Type: GrantFiled: January 29, 2013Date of Patent: May 24, 2016Assignee: CANON ANELVA CORPORATIONInventors: Kazuhito Watanabe, Yukihito Tashiro, Satoshi Nakamura, Daisuke Kobinata, Toshiaki Sasaki, Naoyuki Nozawa
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Publication number: 20160141432Abstract: A solar cell module with an anti-glare property, capable of exhibiting a high antifouling property. A surface of a plate body made of glass in the module is roughened, and an antireflection film is laminated thereon. A change point at which the slope of the contour line of the surface changes steeply exists on a cross-section cutting through the plate body in the thickness direction. With the change point as a boundary, straight lines obtained by pseudo-leveling of the contour lines existing within 0.7 micrometer on one side and 0.7 micrometer on another side, are a one-side pseudo-straight line and an other-side pseudo-straight line, respectively, a steep slope portion in which an angle formed by the pseudo-straight lines is 135 degrees or less, and a total number of less than 5 large cracks having an opening width of 0.2 micrometer or more are distributed per 58-micrometer compartment range.Type: ApplicationFiled: June 13, 2014Publication date: May 19, 2016Inventors: Toshiaki Sasaki, Toshinobu Nakata
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Publication number: 20160133761Abstract: Provided is a solar cell module which has a high anti-glare property and is capable of maintaining power output at a high level. In a solar cell module with a light-incident surface formed by laminating an antireflection film on a plate body made of glass, and a surface of the plate body is roughened. A substance for forming the antireflection film is introduced into a space formed in a crack situated slightly inside from the roughened surface. Formation of a layer of air in the crack is prevented to suppress reflection of light at a portion in which the crack is formed.Type: ApplicationFiled: June 13, 2014Publication date: May 12, 2016Inventors: Toshiaki Sasaki, Toshinobu Nakata
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Patent number: 9252306Abstract: A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of an adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.Type: GrantFiled: December 5, 2008Date of Patent: February 2, 2016Assignee: KANEKA CORPORATIONInventors: Masahiro Goto, Wataru Yoshida, Toshiaki Sasaki
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MODIFIED NATURAL RUBBER, PROCESS FOR PRODUCING SAME, RUBBER COMPOSITION FOR TIRE, AND PNEUMATIC TIRE
Publication number: 20150291765Abstract: The present invention provides a modified natural rubber having a good balance of improved fuel economy, heat-aging resistance, processability, and breaking resistance, and a method for producing such a rubber. The present invention also provides a tire rubber composition and a pneumatic tire which are prepared using the modified natural rubber. The present invention relates to a highly purified, modified natural rubber whose pH is adjusted to 2 to 7.Type: ApplicationFiled: December 2, 2013Publication date: October 15, 2015Applicant: SUMITOMO RUBBER INDUSTRIES LTD.Inventors: Toshiaki Sasaki, Hirotoshi Otsuki, Yuka Yokoyama, Tatsuya Miyazaki, Ryo Mashita -
Patent number: 8999251Abstract: Inorganic fiber formed articles containing a mat-like aggregate of inorganic fibers, the articles obtained by a needling treatment wherein a needling density per unit area of a surface of a mat exceeds 50 punches/cm2, where: i) a ratio of a number NA of fiber bundles extending in a thickness direction and located in a region with a predetermined width W of section A in a predetermined direction, to a number NB of fiber bundles extending in the thickness direction and located in a region with a predetermined width W of section B in a direction orthogonal to the predetermined direction, NA/NB, is 0.5 or less; ii) a width of each of fiber bundle in sections A and B in the thickness direction is 0.3 mm or less; and iii) a needle mark is present in any 3 mm×3 mm region on the surface of the mat.Type: GrantFiled: November 4, 2010Date of Patent: April 7, 2015Assignee: Mitsubishi Plastics, Inc.Inventors: Toshiaki Sasaki, Tomoyuki Kobayashi, Hisashi Aoyagi
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Patent number: 8933327Abstract: A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935±5 cm?1 of the crystalline germanium semiconductor is less than 6000 cm?1.Type: GrantFiled: August 24, 2009Date of Patent: January 13, 2015Assignee: Kaneka CorporationInventors: Toshiaki Sasaki, Naoki Kadota
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Patent number: 8907204Abstract: Provided is a thin film photoelectric conversion device with maximized output characteristic, which is achieved by improving an uneven current value of a photoelectric conversion cell caused by an uneven film thickness and an uneven film quality of a photoelectric conversion semiconductor layer, which may be generated in scaling up an integrated-type thin film photoelectric conversion device. The thin film photoelectric conversion device includes: a substrate, a transparent electrode layer, a photoelectric conversion unit, and a back electrode layer. An increasing rate ?Zt of the film thickness Zt of the transparent electrode layer along X and an increasing rate ?Zs of the film thickness Zs of the photoelectric conversion unit along X have different signs, wherein one line segment in a parallel direction to a main surface of the substrate is taken as X?.Type: GrantFiled: May 19, 2009Date of Patent: December 9, 2014Assignee: Kaneka CorporationInventors: Takashi Fujibayashi, Toshiaki Sasaki, Yuko Tawada
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Patent number: 8704326Abstract: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon.Type: GrantFiled: January 27, 2011Date of Patent: April 22, 2014Assignee: Kaneka CorporationInventors: Naoki Kadota, Toshiaki Sasaki
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Patent number: 8658885Abstract: Provided is a substrate for a thin-film photoelectric conversion device which makes it possible to produce the device having improved characteristics at low cost and high productivity. The substrate includes a transparent base member, with a transparent underlying layer and a transparent electrode layer successively stacked on one main surface of the transparent base member. The underlying layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the one main surface with a coverage factor of particles ranging from 30% or more to less than 80%. An antireflection layer is provided on the other main surface of the transparent base. The antireflection layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the other main surface with a coverage factor greater than the underlying layer. The transparent electrode layer contains zinc oxide deposited by low-pressure CVD method.Type: GrantFiled: May 15, 2009Date of Patent: February 25, 2014Assignee: Kaneka CorporationInventors: Takashi Kikuchi, Toshiaki Sasaki
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Publication number: 20120319111Abstract: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon.Type: ApplicationFiled: January 27, 2011Publication date: December 20, 2012Applicant: KANEKA CORPORATIONInventors: Naoki Kadota, Toshiaki Sasaki
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Publication number: 20120219464Abstract: There is provided an inorganic fiber formed article in which the thickness and the surface density can be easily controlled and which has excellent workability and handleability and prevents the deterioration of the work environment when the inorganic fiber formed article is processed for applications, e.g., a heat insulator or a mat. The inorganic fiber formed article includes a mat-like aggregate of inorganic fibers, the inorganic fiber formed article being subjected to needling treatment. The needling density of a surface of the mat exceeds 50 punches/cm2. One or more of requirements (1) to (3) described below is satisfied. (1) The ratio of the number NA of fiber bundles to the number NB of fiber bundles, i.e., NA/NB, is 0.5 or less, the fiber bundles extending in the thickness direction and being observed in regions with a predetermined width W of section A in the longitudinal direction and section B in the transverse direction.Type: ApplicationFiled: November 4, 2010Publication date: August 30, 2012Applicant: MITSUBISHI PLASTICS. INC.Inventors: Toshiaki Sasaki, Tomoyuki Kobayashi, Hisashi Aoyagi
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Patent number: 8092399Abstract: Even if a mattress or the like suffers long-term deterioration, a sleep state measuring apparatus is provided which can set a suitable amplification factor A of a biosignal. The sleep state measuring apparatus detects the biosignal which changes depending on the sleep state of a person who gets on the mattress filled with water, amplifies the biosignal, and estimates the sleep state based on the biosignal. A static component P of the mattress internal pressure detected by a biosignal sensor is first obtained (S 11). The mattress internal pressure is the pressure of water in the mattress. From the static component P of the mattress internal pressure, a fluctuation part ?V of the mattress internal pressure depending on the value is specified (S 12). Each value of the fluctuation part ?V of the mattress internal pressure is obtained beforehand by applying a predetermined load, and changing the static component P of the mattress internal pressure.Type: GrantFiled: August 18, 2008Date of Patent: January 10, 2012Assignee: Tanita CorporationInventor: Toshiaki Sasaki
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Publication number: 20110146756Abstract: A conventional thin-film photoelectric converter using amorphous germanium or crystalline silicon as a photoelectric conversion layer is problematic in that light having a long wavelength of 1100 nm or more cannot be used for photoelectric conversion, and is inefficient. The problem is solved by a thin-film photoelectric converter including one or more photoelectric conversion units each having a photoelectric conversion layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer, wherein the photoelectric conversion layer of at least one photoelectric conversion unit includes an intrinsic or weak n-type crystalline germanium semiconductor, and the absorption coefficient of infrared-absorption peak at wave number of 935±5 cm?1 of the crystalline germanium semiconductor is less than 6000 cm?1.Type: ApplicationFiled: August 24, 2009Publication date: June 23, 2011Applicant: KANEKA CORPORATIONInventors: Toshiaki Sasaki, Naoki Kadota
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Patent number: 7960646Abstract: In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.Type: GrantFiled: July 25, 2006Date of Patent: June 14, 2011Assignee: Kaneka CorporationInventors: Toshiaki Sasaki, Kenji Yamamoto
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Publication number: 20110073162Abstract: Provided is a substrate for a thin-film photoelectric conversion device which makes it possible to produce the device having improved characteristics at low cost and high productivity. The substrate includes a transparent base member, with a transparent underlying layer and a transparent electrode layer successively stacked on one main surface of the transparent base member. The underlying layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the one main surface with a coverage factor of particles—ranging from 30% or more to less than 80%. An antireflection layer is provided on the other main surface of the transparent base. The antireflection layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the other main surface with a coverage factor greater than the underlying layer. The transparent electrode layer contains zinc oxide deposited by low-pressure CVD method.Type: ApplicationFiled: May 15, 2009Publication date: March 31, 2011Applicant: KANEKA CORPORATIONInventors: Takashi Kikuchi, Toshiaki Sasaki