Patents by Inventor Toshifumi Wakano

Toshifumi Wakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10804309
    Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: October 13, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yusuke Otake, Akira Matsumoto, Junpei Yamamoto, Ryusei Naito, Masahiko Nakamizo, Toshifumi Wakano
  • Publication number: 20200321369
    Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
    Type: Application
    Filed: June 18, 2020
    Publication date: October 8, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
  • Patent number: 10797097
    Abstract: The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: October 6, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke Tanaka, Takashi Nagano, Toshifumi Wakano, Takeshi Matsunuma
  • Publication number: 20200295218
    Abstract: An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.
    Type: Application
    Filed: September 21, 2018
    Publication date: September 17, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Toshifumi WAKANO, Yusuke OTAKE
  • Publication number: 20200286937
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 10, 2020
    Applicant: SONY CORPORATION
    Inventors: Hideyuki HONDA, Tetsuya UCHIDA, Toshifumi WAKANO, Yusuke TANAKA, Yoshiharu KUDOH, Hirotoshi NOMURA, Tomoyuki HIRANO, Shinichi YOSHIDA, Yoichi UEDA, Kosuke NAKANISHI
  • Publication number: 20200258930
    Abstract: An imaging device comprises a sensor substrate including a pixel array that includes at least a first pixel. The first pixel includes an avalanche photodiode including a light receiving region, a cathode, and an anode. The first pixel includes a wiring layer electrically connected to the cathode and arranged in the sensor substrate such that the wiring layer is in a path of incident light that exits the light receiving region.
    Type: Application
    Filed: May 1, 2020
    Publication date: August 13, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Akira TANAKA, Yusuke OTAKE, Toshifumi WAKANO
  • Patent number: 10741605
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: August 11, 2020
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20200251508
    Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Publication number: 20200249083
    Abstract: An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the PHOTODIODE substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.
    Type: Application
    Filed: September 3, 2018
    Publication date: August 6, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kyosuke ITO, Toshifumi WAKANO, Yusuke OTAKE
  • Patent number: 10714519
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: July 14, 2020
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 10700114
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: June 30, 2020
    Assignee: Sony Corporation
    Inventors: Hideyuki Honda, Tetsuya Uchida, Toshifumi Wakano, Yusuke Tanaka, Yoshiharu Kudoh, Hirotoshi Nomura, Tomoyuki Hirano, Shinichi Yoshida, Yoichi Ueda, Kosuke Nakanishi
  • Publication number: 20200203415
    Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 25, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kenji KOBAYASHI, Toshifumi WAKANO, Yusuke OTAKE
  • Patent number: 10680028
    Abstract: An imaging device includes a first chip (12). The first chip includes a first pixel (21) and a second pixel (21). The first pixel includes a first anode region (31) and a first cathode region (32), and the second pixel includes a second anode region (31) and a second cathode region (32). The first chip includes a first wiring layer (23). The first wiring layer includes a first anode electrode (37), a first anode via (38) coupled to the first anode electrode (37) and the first anode region (31), and a second anode via (38) coupled to the first anode electrode (37) and the second anode region (31).
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: June 9, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Kenji Kobayashi, Toshifumi Wakano, Yusuke Otake
  • Patent number: 10672818
    Abstract: An imaging device comprises a sensor substrate including a pixel array that includes at least a first pixel. The first pixel includes an avalanche photodiode including a light receiving region, a cathode, and an anode. The first pixel includes a wiring layer electrically connected to the cathode and arranged in the sensor substrate such that the wiring layer is in a path of incident light that exits the light receiving region.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: June 2, 2020
    Assignee: SONY CORPORATION
    Inventors: Akira Tanaka, Yusuke Otake, Toshifumi Wakano
  • Patent number: 10659705
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: May 19, 2020
    Assignee: Sony Corproation
    Inventors: Takuya Sano, Toshifumi Wakano
  • Patent number: 10651222
    Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: May 12, 2020
    Assignee: SONY CORPORATION
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
  • Publication number: 20200120300
    Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other.
    Type: Application
    Filed: December 16, 2019
    Publication date: April 16, 2020
    Applicant: SONY CORPORATION
    Inventors: Takuya SANO, Toshifumi WAKANO
  • Publication number: 20200091208
    Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
    Type: Application
    Filed: November 25, 2019
    Publication date: March 19, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
  • Publication number: 20200083266
    Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.
    Type: Application
    Filed: February 23, 2018
    Publication date: March 12, 2020
    Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
  • Publication number: 20200083265
    Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.
    Type: Application
    Filed: September 18, 2019
    Publication date: March 12, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke OTAKE, Toshifumi WAKANO