Patents by Inventor Toshifumi Wakano

Toshifumi Wakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190115379
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Application
    Filed: December 7, 2018
    Publication date: April 18, 2019
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Publication number: 20190088693
    Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.
    Type: Application
    Filed: January 18, 2017
    Publication date: March 21, 2019
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Patent number: 10225497
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: March 5, 2019
    Assignee: Sony Corporation
    Inventors: Takuya Sano, Toshifumi Wakano
  • Publication number: 20190067361
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: October 23, 2018
    Publication date: February 28, 2019
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20190057990
    Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicant: SONY CORPORATION
    Inventors: Yosuke TANAKA, Toshifumi WAKANO, Keiji TATANI, Takashi NAGANO, Hayato IWAMOTO, Keiichi NAKAZAWA, Tomoyuki HIRANO, Shinpei YAMAGUCHI, Shunsuke MARUYAMA
  • Publication number: 20190051686
    Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity. In a pixel array unit, pixels are formed with a combination of a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a fifth color component with a second photoelectric conversion unit; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a sixth color component with a second photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).
    Type: Application
    Filed: October 4, 2018
    Publication date: February 14, 2019
    Inventors: KENJI AZAMI, YUSUKE OTAKE, TOSHIFUMI WAKANO
  • Publication number: 20190043901
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Application
    Filed: April 11, 2017
    Publication date: February 7, 2019
    Inventors: Hideyuki HONDA, Tetsuya UCHIDA, Toshifumi WAKANO, Yusuke TANAKA, Yoshiharu KUDOH, Hirotoshi NOMURA, Tomoyuki HIRANO, Shinichi YOSHIDA, Yoichi UEDA, Kosuke NAKANISHI
  • Patent number: 10186533
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: January 22, 2019
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Publication number: 20190019824
    Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.
    Type: Application
    Filed: September 4, 2018
    Publication date: January 17, 2019
    Applicant: SONY CORPORATION
    Inventors: Yosuke TANAKA, Toshifumi WAKANO, Keiji TATANI, Takashi NAGANO, Hayato IWAMOTO, Keiichi NAKAZAWA, Tomoyuki HIRANO, Shinpei YAMAGUCHI, Shunsuke MARUYAMA
  • Publication number: 20190007631
    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
    Type: Application
    Filed: September 5, 2018
    Publication date: January 3, 2019
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Publication number: 20190006399
    Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
    Type: Application
    Filed: October 18, 2017
    Publication date: January 3, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke OTAKE, Akira MATSUMOTO, Junpei YAMAMOTO, Ryusei NAITO, Masahiko NAKAMIZO, Toshifumi WAKANO
  • Publication number: 20180374903
    Abstract: This technology relates to an imaging apparatus and an electronic device structured to perform pupil correction appropriately. There are provided a photoelectric conversion film configured to absorb light of a predetermined color component to generate signal charges, a first lower electrode configured to be formed under the photoelectric conversion film, a second lower electrode configured to be connected with the first lower electrode, a via configured to connect the first lower electrode with the second lower electrode, and a photodiode configured to be formed under the second lower electrode and to generate signal charges reflecting the amount of incident light. A first distance between the center of the photodiode and the center of the via at the center of the angle of view is different from a second distance therebetween at an edge of the angle of view. The present technology can be applied to imaging apparatuses.
    Type: Application
    Filed: December 9, 2016
    Publication date: December 27, 2018
    Applicant: SONY CORPORATION
    Inventors: Yusuke OTAKE, Toshifumi WAKANO
  • Patent number: 10134797
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: November 20, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Patent number: 10128300
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: November 13, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20180324371
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.
    Type: Application
    Filed: July 12, 2018
    Publication date: November 8, 2018
    Applicant: SONY CORPORATION
    Inventors: Takuya SANO, Toshifumi WAKANO
  • Patent number: 10121807
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: November 6, 2018
    Assignee: Sony Corporation
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Patent number: 10115752
    Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: October 30, 2018
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Kenji Azami, Yusuke Otake, Toshifumi Wakano
  • Publication number: 20180261643
    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.
    Type: Application
    Filed: May 16, 2018
    Publication date: September 13, 2018
    Applicant: Sony Corporation
    Inventor: Toshifumi Wakano
  • Publication number: 20180261644
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: November 14, 2017
    Publication date: September 13, 2018
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20180261635
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Application
    Filed: May 15, 2018
    Publication date: September 13, 2018
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano