Patents by Inventor Toshiharu Kinoshita

Toshiharu Kinoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10393449
    Abstract: A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: August 27, 2019
    Assignees: NGK Insulators, Ltd., NGK Adrec Co., Ltd., Tokyo Institute of Technology
    Inventors: Shinichi Miwa, Toshiharu Kinoshita, Iori Himoto, Yukitaka Kato, Jun Kariya
  • Patent number: 10371460
    Abstract: A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000° C. or less.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: August 6, 2019
    Assignees: NGK Insulators, Ltd., NGK Adrec Co., Ltd.
    Inventors: Shinichi Miwa, Toshiharu Kinoshita, Iori Himoto
  • Publication number: 20170284747
    Abstract: A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000° C. or less.
    Type: Application
    Filed: March 24, 2017
    Publication date: October 5, 2017
    Applicants: NGK INSULATORS, LTD., NGK Adrec Co., Ltd.
    Inventors: Shinichi MIWA, Toshiharu KINOSHITA, Iori HIMOTO
  • Publication number: 20170284746
    Abstract: A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.
    Type: Application
    Filed: March 24, 2017
    Publication date: October 5, 2017
    Applicants: NGK INSULATORS, LTD., NGK Adrec Co., Ltd.
    Inventors: Shinichi MIWA, Toshiharu KINOSHITA, Iori HIMOTO
  • Publication number: 20090215160
    Abstract: A connection base portion of a stripping solution unit storing a stripping solution is connected to an insertion opening of a channel in an insertion portion of an endoscope. A distal end portion of the insertion portion formed with a distal end opening of the channel is attached, with a sealing film, to an opening in a top cover of a bacteria collection container with a filter inside to be sealed from outside. By suction operation of a syringe at a bottom of the bacteria collection container, the stripping solution is sucked into the insertion opening, flows out from the distal end opening through the channel, and is filtered through the filter. A medium is supplied to the filter for cultivation. A result of the cultivation is observed, and an evaluation result as to cleanliness is obtained from presence or absence of bacteria.
    Type: Application
    Filed: February 5, 2009
    Publication date: August 27, 2009
    Applicant: OLYMPUS MEDICAL SYSTEMS CORP.
    Inventors: Tsuruo Hatori, Yuki Nagai, Toshiharu Kinoshita, Hidetaka Tsuji, Yosuke Kanamori
  • Patent number: 7494949
    Abstract: A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 ?m as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 ?m, 10 to 30% by mass of a Si powder of 0.05 to 30 ?m, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg.
    Type: Grant
    Filed: July 23, 2004
    Date of Patent: February 24, 2009
    Assignees: NGK Insulators, Ltd., NGK Adrec Co., Ltd.
    Inventors: Toshiharu Kinoshita, Tsuneo Komiyama
  • Publication number: 20060281625
    Abstract: The present invention provides a silicon nitride-bonded SiC refractory which contains SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9, and a method for producing a silicon nitride-bonded SiC refractory, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 ?m as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 ?m, 10 to 30% by mass of a Si powder of 0.05 to 30 ?m, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg. According to the silicon nitride-bonded SiC refractory and the method for production thereof, there can be obtained a refractory which has heat resistance, thermal shock resistance and oxidation resistance and which is high in strength and superior in creep resistance and thermal conductivity.
    Type: Application
    Filed: July 23, 2004
    Publication date: December 14, 2006
    Applicants: NGK INSULATORS, LTD., NGK ADREC CO., LTD.
    Inventors: Toshiharu Kinoshita, Tsuneo Komiyama
  • Patent number: 7141309
    Abstract: A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100–2,500° C. for 1–5 hours to obtain a base material, impregnating the base material with an organic resin, treating the base material with heat, and impregnating the base material with metal silicon at 1,450–1,800° C. under reduced pressure.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: November 28, 2006
    Assignee: NGK Insulators, Ltd.
    Inventors: Toshiharu Kinoshita, Tsuneo Komiyama
  • Publication number: 20040183232
    Abstract: A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100-2,500° C. for 1-5 hours to obtain a base material, impregnating the base material with an organic resin, treating the base material with heat, and impregnating the base material with metal silicon at 1,450-1,800° C. under reduced pressure.
    Type: Application
    Filed: March 18, 2004
    Publication date: September 23, 2004
    Applicants: NGK Insulators, Ltd., NGK Adrec Co., Ltd.
    Inventors: Toshiharu Kinoshita, Tsuneo Komiyama
  • Patent number: 6656438
    Abstract: Since the disinfectant solution bottle has a detachable section and a sealing section, the disinfectant solution bottle can be connected to the inlet of the disinfectant solution tank of the cleaning and disinfecting unit in a watertight manner; the mouth section of the bottle is closed with the sealing section before the disinfectant solution bottle is attached to the inlet of the disinfectant solution tank; and while the disinfectant solution is being connected to the inlet of the disinfectant solution tank, the disinfectant solution or concentrated disinfectant solution in the disinfectant solution bottle can flow into the disinfectant solution tank via the inlet because the inside of the disinfectant solution bottle and the inside of the disinfectant solution tank can communicate with each other in a watertight manner cut off from the outside, for example, due to automatic rupture of the sealing section when the disinfectant bottle is attached to the inlet of the disinfectant solution tank.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: December 2, 2003
    Assignee: Olympus Corporation
    Inventors: Toshiharu Kinoshita, Mikihiko Nakagawa
  • Patent number: 6649270
    Abstract: There is provided a jig for use in heat treatment onto which a vitreous plate having had films exhibiting respective given functions formed on its surface is to be loaded when the vitreous plate undergoes heat treatment. The jig contains 50% by weight or more phase containing SiC, its thermal conductivity is 10 W/mK or more, its apparent porosity 0.2 to 25%, and in that its coefficient of thermal expansion is 3.8×10−6/°C. to 5.5×10−6/°C.
    Type: Grant
    Filed: October 30, 2001
    Date of Patent: November 18, 2003
    Assignees: NGK Insulators, Ltd., NGK Adrec Co., Ltd.
    Inventors: Toshiharu Kinoshita, Shigeru Ogura
  • Publication number: 20020076560
    Abstract: There is provided a jig for use in heat treatment onto which a vitreous plate having had films exhibiting respective given functions formed on its surface is to be loaded when the vitreous plate undergoes heat treatment. The jig contains 50% by weight or more phase containing SiC, its thermal conductivity is 10 W/mK or more, its apparent porosity 0.2 to 25%, and in that its coefficient of thermal expansion is 3.8×10−6/°C. to 5.5×10−6/°C.
    Type: Application
    Filed: October 30, 2001
    Publication date: June 20, 2002
    Applicant: NGK INSULATORS, LTD.
    Inventors: Toshiharu Kinoshita, Shigeru Ogura
  • Patent number: 6379632
    Abstract: An endoscope cleaning and disinfecting unit has an inlet arranged on its disinfectant solution tank through which a concentrated disinfectant solution is injected into the disinfectant solution tank. A diluting solution supply supplies a diluting solution for diluting the concentrated solution to the disinfectant solution tank and a plurality of level sensors detect the quantity of the disinfectant solution held in the disinfectant solution tank in stages. A control section controls the diluting solution supply based on the information detected by the level sensors to dilute the concentrated solution injected into the disinfectant solution tank through the inlet to a predetermined concentration.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: April 30, 2002
    Assignee: Olympus Optical Co., Ltd.
    Inventors: Toshiharu Kinoshita, Mikihiko Nakagawa
  • Patent number: 4768223
    Abstract: A public telephone set that processes call charge information is provided. The set includes a register for holding a pre-determined number of digits of the dialed number and a memory in which dial control codes corresponding to the predetermined number of digits are stored in advance. Depending upon the telephone number that is dialed, a memory location is directly addressed to obtain a control code. The control code specifies a memory location in which charging information such as a charge or time increment is stored. This information is then processed to determine the appropriate charge for the number dialed.
    Type: Grant
    Filed: March 6, 1986
    Date of Patent: August 30, 1988
    Assignee: Tamura Electric Works, Ltd.
    Inventors: Toshiharu Kinoshita, Shuji Kunii, Yoshiki Sano
  • Patent number: 4644109
    Abstract: In a coin telephone, a self diagnosis function and an alarm information transmission function upon formation of a loop in an off-hook mode are utilized. Upon reception of a ringing signal from a maintenance control center, self diagnosis is performed. Upon detection of a failure, a content of the failure and a control number of the coin telephone are sent to the maintenance control center. A failure check for a coin telephone which is not frequently used can be performed from the telephone center without requiring an off-hook operation.
    Type: Grant
    Filed: October 7, 1985
    Date of Patent: February 17, 1987
    Assignee: Tamura Electric Works, Ltd.
    Inventors: Yoshiaki Takeda, Toshiharu Kinoshita, Osamu Kai
  • Patent number: 4125749
    Abstract: The key button telephone system comprises a key service unit and a plurality of key telephone units. The key service unit and each key telephone unit are interconnected by a pair of cables, one of which is used as a talking circuit and the other is used to transmit and receive information signals and operating power. The key service unit comprises a line circuit for supervising the state of a line, a station unit for supervising the line circuit, and for supplying to the key telephone unit an information signal representing the state of the line and the operating power, a switching network controlled by the control output from the station unit for connecting the key telephone unit to the line, and a common control circuit for controlling the line circuit and the station unit.
    Type: Grant
    Filed: August 5, 1976
    Date of Patent: November 14, 1978
    Assignee: Tamura Electric Works, Ltd.
    Inventors: Toshiharu Kinoshita, Yoshio Shinoda, Takashi Oyamada, Mitsuo Masuda, Noritomo Arai