Abstract: An electrolyte solution containing a compound (1) represented by the formula (1), (wherein R101 and R102 are each individually a substituent such as a C1-C7 alkyl group, and the substituent optionally contains at least one divalent to hexavalent hetero atom in a structure or optionally has a structure obtained by replacing at least one hydrogen atom by a fluorine atom or a C0-C7 functional group) and at least one compound (11) selected from compounds such as a compound represented by formula (11-1) (wherein R111 and R112 are the same as or different from each other and are each a hydrogen atom or the like, and R113 is an alkyl group free from a fluorine atom or the like):

Abstract: A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.

Abstract: A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000° C. or less.

Abstract: A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.

Abstract: A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000° C. or less.

Abstract: A connection base portion of a stripping solution unit storing a stripping solution is connected to an insertion opening of a channel in an insertion portion of an endoscope. A distal end portion of the insertion portion formed with a distal end opening of the channel is attached, with a sealing film, to an opening in a top cover of a bacteria collection container with a filter inside to be sealed from outside. By suction operation of a syringe at a bottom of the bacteria collection container, the stripping solution is sucked into the insertion opening, flows out from the distal end opening through the channel, and is filtered through the filter. A medium is supplied to the filter for cultivation. A result of the cultivation is observed, and an evaluation result as to cleanliness is obtained from presence or absence of bacteria.

Abstract: A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 ?m as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 ?m, 10 to 30% by mass of a Si powder of 0.05 to 30 ?m, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg.

Abstract: The present invention provides a silicon nitride-bonded SiC refractory which contains SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9, and a method for producing a silicon nitride-bonded SiC refractory, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 ?m as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 ?m, 10 to 30% by mass of a Si powder of 0.05 to 30 ?m, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg. According to the silicon nitride-bonded SiC refractory and the method for production thereof, there can be obtained a refractory which has heat resistance, thermal shock resistance and oxidation resistance and which is high in strength and superior in creep resistance and thermal conductivity.

Abstract: A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100–2,500° C. for 1–5 hours to obtain a base material, impregnating the base material with an organic resin, treating the base material with heat, and impregnating the base material with metal silicon at 1,450–1,800° C. under reduced pressure.

Abstract: A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100-2,500° C. for 1-5 hours to obtain a base material, impregnating the base material with an organic resin, treating the base material with heat, and impregnating the base material with metal silicon at 1,450-1,800° C. under reduced pressure.

Abstract: Since the disinfectant solution bottle has a detachable section and a sealing section, the disinfectant solution bottle can be connected to the inlet of the disinfectant solution tank of the cleaning and disinfecting unit in a watertight manner; the mouth section of the bottle is closed with the sealing section before the disinfectant solution bottle is attached to the inlet of the disinfectant solution tank; and while the disinfectant solution is being connected to the inlet of the disinfectant solution tank, the disinfectant solution or concentrated disinfectant solution in the disinfectant solution bottle can flow into the disinfectant solution tank via the inlet because the inside of the disinfectant solution bottle and the inside of the disinfectant solution tank can communicate with each other in a watertight manner cut off from the outside, for example, due to automatic rupture of the sealing section when the disinfectant bottle is attached to the inlet of the disinfectant solution tank.

Abstract: There is provided a jig for use in heat treatment onto which a vitreous plate having had films exhibiting respective given functions formed on its surface is to be loaded when the vitreous plate undergoes heat treatment. The jig contains 50% by weight or more phase containing SiC, its thermal conductivity is 10 W/mK or more, its apparent porosity 0.2 to 25%, and in that its coefficient of thermal expansion is 3.8×10−6/°C. to 5.5×10−6/°C.

Abstract: There is provided a jig for use in heat treatment onto which a vitreous plate having had films exhibiting respective given functions formed on its surface is to be loaded when the vitreous plate undergoes heat treatment. The jig contains 50% by weight or more phase containing SiC, its thermal conductivity is 10 W/mK or more, its apparent porosity 0.2 to 25%, and in that its coefficient of thermal expansion is 3.8×10−6/°C. to 5.5×10−6/°C.

Abstract: An endoscope cleaning and disinfecting unit has an inlet arranged on its disinfectant solution tank through which a concentrated disinfectant solution is injected into the disinfectant solution tank. A diluting solution supply supplies a diluting solution for diluting the concentrated solution to the disinfectant solution tank and a plurality of level sensors detect the quantity of the disinfectant solution held in the disinfectant solution tank in stages. A control section controls the diluting solution supply based on the information detected by the level sensors to dilute the concentrated solution injected into the disinfectant solution tank through the inlet to a predetermined concentration.

Abstract: A public telephone set that processes call charge information is provided. The set includes a register for holding a pre-determined number of digits of the dialed number and a memory in which dial control codes corresponding to the predetermined number of digits are stored in advance. Depending upon the telephone number that is dialed, a memory location is directly addressed to obtain a control code. The control code specifies a memory location in which charging information such as a charge or time increment is stored. This information is then processed to determine the appropriate charge for the number dialed.

Abstract: In a coin telephone, a self diagnosis function and an alarm information transmission function upon formation of a loop in an off-hook mode are utilized. Upon reception of a ringing signal from a maintenance control center, self diagnosis is performed. Upon detection of a failure, a content of the failure and a control number of the coin telephone are sent to the maintenance control center. A failure check for a coin telephone which is not frequently used can be performed from the telephone center without requiring an off-hook operation.

Abstract: The key button telephone system comprises a key service unit and a plurality of key telephone units. The key service unit and each key telephone unit are interconnected by a pair of cables, one of which is used as a talking circuit and the other is used to transmit and receive information signals and operating power. The key service unit comprises a line circuit for supervising the state of a line, a station unit for supervising the line circuit, and for supplying to the key telephone unit an information signal representing the state of the line and the operating power, a switching network controlled by the control output from the station unit for connecting the key telephone unit to the line, and a common control circuit for controlling the line circuit and the station unit.