Abstract: An improved dried egg white has a pH of 9.5 or more and a carbon dioxide concentration is 1% or less in a sealed 250 ml vial, when 25 g of the product is stored in the vial at 75° C. for 24 hours.

Abstract: A substrate processing apparatus comprises a chamber. The chamber includes a container and an upper lid for closing an upper opening of the container. On the upper side of the chamber, an elevator for vertically moving the upper lid is disposed integrally with the chamber.

Abstract: Black ink compositions are provided. First embodiment contains a water-soluble long-wavelength dye L and a water-soluble short-wavelength dye S, in which the water-soluble short-wavelength dye S has 3 or more azo groups per molecule and a naphthalene skeleton. Second embodiment contains a water-soluble short-wavelength dye S whose absorption spectrum in aqueous solvent has a maximum between 440 nm and 540 nm and a half-band width of 90 to 200 nm and a water-soluble long-wavelength dye L whose absorption spectrum in aqueous solvent has a maximum between 550 nm and 700 nm and a half-band width of 100 nm or more. Third embodiment contains water, a water-miscible organic solvent, and a coloring material, in which C. I. Direct Red 84 is contained as a water-soluble short-wavelength dye S.

Abstract: A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.

Abstract: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises: depositing an insulation film on a silicon substrate; forming element isolation regions by processing the insulation film as well as exposing the surface of the silicon substrate in the region thereof acting as active element forming regions later; and forming the active element forming regions by epitaxially growing a silicon film on the exposed surface of the silicon substrate such that the thickness thereof is larger than the short side width in the perpendicular cross section thereof as well as smaller than the dimension of the element isolation regions in the depth direction thereof.

Abstract: A production method for laminated glass capable of performing a firing step for a fired substance and a bend-forming step to an inner sheet and an outer sheet in the same forming furnace when laminated glass having a fired substance between an inner sheet and an outer sheet is produced, whereby the inner sheet and the outer sheet overlap each other with high accuracy and a production device thereof, are provided. A production method for laminated glass having a fired substance between an inner sheet 2 and an outer sheet 3 wherein a firing step for firing a fired substance in a state that the inner sheet 2 and the outer sheet 3 are kept away and a bend-forming step in a state that the inner sheet 2 and the outer sheet 3 overlap each other, is carried out in the same forming furnace.

Abstract: A semiconductor memory device includes a trench formed in the semiconductor substrate, a diffusion layer for a first electrode formed within the semiconductor substrate so as to be in contact with an inner surface of the trench, a capacitor insulating film formed on the diffusion layer, a conductive layer for a second electrode formed so as to bury a lower portion of the trench, a first insulating film formed on the conductive layer and along a side surface of the trench, a first conductive layer formed so as to bury an intermediate portion of the trench, a first contact layer formed so as to bury an upper portion of the trench, and a second contact layer formed on the surface of the semiconductor substrate so as to be in contact with the first contact layer.

Abstract: A semiconductor memory device includes: a semiconductor substrate; a plurality of trench capacitors each including a capacitor dielectric film formed on a sidewall of a first trench to be formed in the semiconductor substrate, a storage node formed so as to bury the first trench via the capacitor dielectric film, and a buried plate formed in the semiconductor substrate so as to surround the first trench; a device isolation trench formed in the semiconductor substrate so as to define a device formation area across neighboring two trench capacitors; a first insulating film for device isolation formed of a first insulating material to surround the device isolation trench; a plurality of transistors formed on the device forming area respectively including a gate electrode formed on the semiconductor substrate via a gate insulating film so as to be a word line continuing in one direction and source/drain diffusion layers formed on the surface layer of the semiconductor substrate sandwiching the gate electrode such

Abstract: A stage base comprises a base body, an elevator, and a shifter. The base body has a bottom face facing a reference surface. The elevator is attached to the base body and operative to move the base body in a vertical direction with respect to the reference surface. The shifter is attached to the elevator. The shifter enables the base body to move along the reference surface.

Abstract: A semiconductor memory includes a semiconductor substrate; a capacitor arranged in a lower portion of the trench; a collar oxide film arranged on a side of the trench above the capacitor and having an upper collar member and a lower collar member, the upper collar member being thinner than the lower collar member so as to provide a height difference therebetween; a storage node arranged on a side of the collar oxide film; a select transistor provided on the semiconductor substrate and having a doped layer in contact with the collar oxide film; and a conductor portion arranged upon the storage node and the doped layer.

Abstract: A flow regulating valve (11), which has a valve disk (11b) operably disposed in a flow channel and is capable of regulating the flow of fluid according to the valve opening degree of the valve disk (11b), is characterized by comprising a stress detecting means (13) for detecting the flow-channel-direction force component of a load applied to the valve disk by the fluid, and a valve opening degree detecting means (12) for detecting the degree of opening of the valve disk. The flow rate calculating means (14) finds the flow rate (Qm) from the stress (fm) obtained from the stress detecting means and from the valve opening degree (?m) obtained from the valve opening degree detecting means. A control means (15) controls a valve disk driving means (18) on the basis of the flow rate to drive the valve disk for opening and closing. This makes it possible to find the flow rate with higher sensitivity and accuracy than in the prior art, the construction being compact and simple, providing stabilized data.

Abstract: A semiconductor memory device includes a trench formed in the semiconductor substrate, a diffusion layer for a first electrode formed within the semiconductor substrate so as to be in contact with an inner surface of the trench, a capacitor insulating film formed on the diffusion layer, a conductive layer for a second electrode formed so as to bury a lower portion of the trench, a first insulating film formed on the conductive layer and along a side surface of the trench, a first conductive layer formed so as to bury an intermediate portion of the trench, a first contact layer formed so as to bury an upper portion of the trench, and a second contact layer formed on the surface of the semiconductor substrate so as to be in contact with the first contact layer.

Abstract: A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.

Abstract: A method for forming a multicolor image comprises: preparing: an image-receiving sheet having a support and an image-receiving layer; and at least four thermal transfer sheets each including a support, a light-to-heat converting layer and an image-forming layer, in which each of the at least four thermal transfer sheets has a different color and each of the image-forming layers in the at least four thermal transfer sheets has a ratio of an optical density (OD) to a layer thickness: OD/layer thickness (?m unit) of 1.

Abstract: A stage base comprises a base body, an elevator, and a shifter. The base body has a bottom face facing a reference surface. The elevator is attached to the base body and operative to move the base body in a vertical direction with respect to the reference surface. The shifter is attached to the elevator. The shifter enables the base body to move along the reference surface.

Abstract: An image recording method includes the steps of attaching recording paper on an outer peripheral surface of a recording drum, attaching an image receiving sheet having an image receiving layer on the recording paper to transfer the image receiving layer thereon, attaching a toner sheet on the image recording sheet, and transferring toner of the toner sheet onto the image receiving layer in accordance with recording data.

Abstract: A substrate processing apparatus comprises a chamber. The chamber includes a container and an upper lid for closing an upper opening of the container. On the upper side of the chamber, an elevator for vertically moving the upper lid is disposed integrally with the chamber.

Abstract: A CD (compact disc) system is provided in a software form, by which a virtual CD-R (compact disc recordable) can be formed on a computer, and an actual CD-R can be easily and quickly formed from this formed virtual CD-R. While original data is processed, a virtual CD-R is formed in accordance with a structural requirement of a CD into a storage means employed in the computer. Furthermore, an actual CD-R is formed from the above-explained CD-R.

Abstract: A heat transfer sheet comprising a light-heat conversion layer having an infrared absorption colorant and an image forming layer sequentially disposed on a support, wherein an optical density in a 600 nm to 1000 nm range of the light-heat conversion layer is within a range of 0.3 to 2.0.

Abstract: A method for forming a multicolor image comprises: