Patents by Inventor Toshihide Agemura
Toshihide Agemura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200111638Abstract: A measuring apparatus that irradiates a sample with a charged particle beam to observe the sample includes a particle source that outputs the charged particle beam, a lens that collects the charged particle beam, a detector that detects a signal of emitted electrons emitted from the sample which is irradiated with the charged particle beam, and a control device that controls the output of the charged particle beam and the detection of the signal of the emitted electrons in accordance with an observation condition, in which the control device sets, as the observation condition, a first parameter for controlling an irradiation cycle of the charged particle beam, a second parameter for controlling a pulse width of the pulsed charged particle beam, and a third parameter for controlling detection timing of the signal of the emitted electron within the irradiation time of the pulsed charged particle beam, and the third parameter is determined in accordance with a difference in intensity of signals of the pluraliType: ApplicationFiled: May 12, 2017Publication date: April 9, 2020Inventors: Ryoko ARAKI, Natsuki TSUNO, Yohei NAKAMURA, Masahiro SASAJIMA, Mitsuhiro NAKAMURA, Toshihide AGEMURA
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Publication number: 20200090903Abstract: A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.Type: ApplicationFiled: March 29, 2017Publication date: March 19, 2020Inventors: Ryo HIRANO, Hideo MORISHITA, Toshihide AGEMURA, Junichi KATANE, Tsunenori NOMAGUCHI
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Publication number: 20190385810Abstract: The charged particle beam device includes a charged particle beam source which emits a primary charged particle beam, an objective lens which focuses the primary charged particle beam on a sample, a passage electrode which is formed of a metal material and is disposed between the charged particle beam source and a tip end of the objective lens, a detector which detects a secondary charged particle emitted from the sample, and an electrostatic field electrode which is electrically insulated from the passage electrode. The passage electrode is formed such that the primary charged particle beam passes through the inside of the passage electrode. The electrostatic field electrode is formed to cover an outer periphery of the passage electrode.Type: ApplicationFiled: February 22, 2017Publication date: December 19, 2019Applicant: Hitachi High-Technologies CorporationInventors: Ryuju SATO, Toshihide AGEMURA, Tsunenori NOMAGUCHI
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Patent number: 10453648Abstract: There is provided a charged particle beam apparatus capable of obtaining a high SN ratio with a small electron irradiation amount. The charged particle beam apparatus includes a charged particle detection device. The charged particle detection device detects an analog pulse waveform signal (110) in a detection of emitted electrons (1 event) when one primary electron enters a sample, converts the analog pulse waveform signal (110) into a digital signal (111), perform a wave height discrimination (112) with the use of a unit peak corresponding electron, and outputs the digital signal (111) as a multilevel count value.Type: GrantFiled: October 22, 2015Date of Patent: October 22, 2019Assignee: Hitachi High-Technologies CorporationInventors: Yoshinobu Kimura, Natsuki Tsuno, Toshihide Agemura, Takeshi Ogashiwa, Junichiro Tomizawa
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Patent number: 10297416Abstract: The purpose of the present invention is to be able to acquire high-resolution images in a scanning electron microscope using a combination of a cold cathode (CFE) electron source and a boosting process, even at low accelerating voltage enhancing the current stability of the CFE electron source. A configuration in which a CFE electron source (101), an anode electrode (103) at positive (+) potential, and an insulator (104) for isolating the anode electrode (103) from ground potential are accommodated within a single vacuum chamber (105), and an ion pump (106) and a non-evaporable getter (NEG) pump (107) are connected to the vacuum chamber (105), is employed.Type: GrantFiled: October 20, 2014Date of Patent: May 21, 2019Assignee: Hitachi High-Technologies CorporationInventors: Toshihide Agemura, Masashi Sasaki, Daisuke Kobayashi, Shunsuke Sato
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Publication number: 20190148105Abstract: In a charged particle beam apparatus is provided with an optical image capturing apparatus having an angle different from that of a column, a sample may collide with other components when the sample is faced toward the optical image capturing apparatus. The charged particle beam apparatus includes a stage configured to place a sample thereon and to move the sample inside a sample chamber; a column configured to observe the sample by irradiating a charged particle beam on the sample; a first image capturing apparatus configured to observe a surface of the sample irradiated with the charged particle beam from an angle different from that of the column; and a control unit configured to, when observing the sample via the first image capturing apparatus, separate the sample from the column and to tilt the sample through the stage to face toward the first image capturing apparatus.Type: ApplicationFiled: June 17, 2016Publication date: May 16, 2019Inventors: Munekazu KOYANAGI, Wataru SUZUKI, Toshihide AGEMURA
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Patent number: 10249471Abstract: The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a long time. In order to realize very accurate three-dimensional structure/composition analysis, in the automatic sequence for repeatedly performing sample observation using a scanning electron microscope using a CFE electron source and sample processing using a FIB device, low temperature flushing using the CFE electron source is performed at predetermined timing except for a SEM observation time. According to the present invention, the automatic sequence for repeatedly performing the sample observation using the scanning electron microscope using the CFE electron source and the sample processing using the FIB device can be performed for a long time. Therefore, it is possible to acquire a SEM image which achieves high resolution and improved current stability while the low acceleration voltage is used.Type: GrantFiled: December 26, 2014Date of Patent: April 2, 2019Assignee: Hitachi High-Technologies CorporationInventor: Toshihide Agemura
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Patent number: 10128081Abstract: A composite charged particle beam apparatus modulates an irradiation condition of a charged particle beam at high speed and detects a signal in synchronization with a modulation period to extract a signal arising from a particular charged particle beam when a sample is irradiated with a plurality of charged particle beams simultaneously. Light emitted from two or more kinds of scintillators having different light emitting properties is dispersed, signal strength is detected, and a signal is processed based on a ratio of first signal strength when the sample is irradiated with a first charged particle beam alone to second signal strength when the sample is irradiated with a second charged particle beam alone. The apparatus can extract only a signal arising from a desired charged particle beam even when the sample is irradiated with the plurality of charged particle beams simultaneously.Type: GrantFiled: August 8, 2017Date of Patent: November 13, 2018Assignee: Hitachi High-Technologies CorporationInventors: Tsunenori Nomaguchi, Toshihide Agemura
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Patent number: 10014151Abstract: This composite charged particle beam device comprises a first charged particle beam column (6), a second charged particle beam column (1) which is equipped with a deceleration system, and is equipped with a detector (3) inside the column, a test piece stage (10) on which a test piece (9) is placed, and an electric field correction electrode (13) which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column.Type: GrantFiled: February 4, 2016Date of Patent: July 3, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yuta Imai, Hideo Morishita, Toshihide Agemura
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Patent number: 9966218Abstract: The present invention provides an electron beam device that achieves high spatial resolution and high luminance, while remaining insusceptible to the effects of external disturbance. The present invention relates to an electron beam device, wherein, between, e.g., an electron source for generating an electron beam and an objective lens for focusing the electron beam onto a sample, a high voltage beam tube is disposed close to the electron source and a low voltage beam tube is disposed close to the objective lens. This makes it possible to achieve high luminance while maintaining spatial resolution, even with an SEM that is provided with a type of objective lens that actively leaks a magnetic field onto a sample.Type: GrantFiled: April 22, 2015Date of Patent: May 8, 2018Assignee: Hitachi High-Technologies CorporationInventors: Tsunenori Nomaguchi, Toshihide Agemura
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Publication number: 20180025885Abstract: This composite charged particle beam device comprises a first charged particle beam column (6), a second charged particle beam column (1) which is equipped with a deceleration system, and is equipped with a detector (3) inside the column, a test piece stage (10) on which a test piece (9) is placed, and an electric field correction electrode (13) which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column.Type: ApplicationFiled: February 4, 2016Publication date: January 25, 2018Inventors: Yuta IMAI, Hideo MORISHITA, Toshihide AGEMURA
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Publication number: 20170358421Abstract: A composite charged particle beam apparatus modulates an irradiation condition of a charged particle beam at high speed and detects a signal in synchronization with a modulation period to extract a signal arising from a particular charged particle beam when a sample is irradiated with a plurality of charged particle beams simultaneously. Light emitted from two or more kinds of scintillators having different light emitting properties is dispersed, signal strength is detected, and a signal is processed based on a ratio of first signal strength when the sample is irradiated with a first charged particle beam alone to second signal strength when the sample is irradiated with a second charged particle beam alone. The apparatus can extract only a signal arising from a desired charged particle beam even when the sample is irradiated with the plurality of charged particle beams simultaneously.Type: ApplicationFiled: August 8, 2017Publication date: December 14, 2017Inventors: Tsunenori NOMAGUCHI, Toshihide AGEMURA
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Publication number: 20170345614Abstract: There is provided a charged particle beam apparatus capable of obtaining a high SN ratio with a small electron irradiation amount. The charged particle beam apparatus includes a charged particle detection device. The charged particle detection device detects an analog pulse waveform signal (110) in a detection of emitted electrons (1 event) when one primary electron enters a sample, converts the analog pulse waveform signal (110) into a digital signal (111), perform a wave height discrimination (112) with the use of a unit peak corresponding electron, and outputs the digital signal (111) as a multilevel count value.Type: ApplicationFiled: October 22, 2015Publication date: November 30, 2017Inventors: Yoshinobu KIMURA, Natsuki TSUNO, Toshihide AGEMURA, Takeshi OGASHIWA, Junichiro TOMIZAWA
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Publication number: 20170330722Abstract: The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a long time. In order to realize very accurate three-dimensional structure/composition analysis, in the automatic sequence for repeatedly performing sample observation using a scanning electron microscope using a CFE electron source and sample processing using a FIB device, low temperature flushing using the CFE electron source is performed at predetermined timing except for a SEM observation time. According to the present invention, the automatic sequence for repeatedly performing the sample observation using the scanning electron microscope using the CFE electron source and the sample processing using the FIB device can be performed for a long time. Therefore, it is possible to acquire a SEM image which achieves high resolution and improved current stability while the low acceleration voltage is used.Type: ApplicationFiled: December 26, 2014Publication date: November 16, 2017Inventor: Toshihide AGEMURA
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Publication number: 20170309437Abstract: The purpose of the present invention is to be able to acquire high-resolution images in a scanning electron microscope using a combination of a cold cathode (CFE) electron source and a boosting process, even at low accelerating voltage enhancing the current stability of the CFE electron source. A configuration in which a CFE electron source (101), an anode electrode (103) at positive (+) potential, and an insulator (104) for isolating the anode electrode (103) from ground potential are accommodated within a single vacuum chamber (105), and an ion pump (106) and a non-evaporable getter (NEG) pump (107) are connected to the vacuum chamber (105), is employed.Type: ApplicationFiled: October 20, 2014Publication date: October 26, 2017Inventors: Toshihide AGEMURA, Masashi SASAKI, Daisuke KOBAYASHI, Shunsuke SATO
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Patent number: 9761409Abstract: The present invention relates to modulating an irradiation condition of a charged particle beam at high speed and detecting a signal in synchronization with a modulation period for the purpose of extracting a signal arising from a certain charged particle beam when a sample is irradiated with a plurality of charged particle beams simultaneously or, for example, for the purpose of separating a secondary electron signal arising from ion beam irradiation and a secondary electron signal arising from electron beam irradiation in an FIB-SEM system. The present invention further relates to dispersing light emitted from two or more kinds of scintillators having different light emitting properties, detecting each signal strength, and processing a signal on the basis of a ratio of first signal strength when the sample is irradiated with a first charged particle beam alone to second signal strength when the sample is irradiated with a second charged particle beam alone, the ratio being set by a mechanism.Type: GrantFiled: January 10, 2014Date of Patent: September 12, 2017Assignee: Hitachi High-Technologies CorporationInventors: Tsunenori Nomaguchi, Toshihide Agemura
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Publication number: 20170040139Abstract: The present invention provides an electron beam device that achieves high spatial resolution and high luminance, while remaining insusceptible to the effects of external disturbance. The present invention relates to an electron beam device, wherein, between, e.g., an electron source for generating an electron beam and an objective lens for focusing the electron beam onto a sample, a high voltage beam tube is disposed close to the electron source and a low voltage beam tube is disposed close to the objective lens. This makes it possible to achieve high luminance while maintaining spatial resolution, even with an SEM that is provided with a type of objective lens that actively leaks a magnetic field onto a sample.Type: ApplicationFiled: April 22, 2015Publication date: February 9, 2017Inventors: Tsunenori NOMAGUCHI, Toshihide AGEMURA
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Patent number: 9536703Abstract: This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam (5) when the electron beam is passing through an objective lens; and a first detector (8) and a second detector (7) that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (9A). When the distance between the tip (13) at the sample side of the objective lens and the sensitive surface of the first detector is L1 and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L2, then L1/L2?5/9.Type: GrantFiled: July 11, 2014Date of Patent: January 3, 2017Assignee: Hitachi High-Technologies CorporationInventors: Toshihide Agemura, Hideo Morishita
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Publication number: 20160379797Abstract: Disclosed is a charged particle beam apparatus wherein charged particles emitted from a sample are efficiently acquired at a position as close as possible to the sample, said position being in the objective lens. This charged particle beam apparatus is provided with: a charged particle beam receiving surface that is provided with a scintillator that emits light by means of charged particles; a photodetector that detects light emitted from the scintillator; a mirror that guides, to the photodetector, the light emitted from the scintillator; and an objective lens for focusing the charged particle beam to a sample. A distance (Lsm) between the charged particle beam receiving surface and the mirror is longer than a distance (Lpm) between the photodetector and the mirror, and the charged particle beam receiving surface, the mirror, and the photodetector are stored in the objective lens.Type: ApplicationFiled: June 25, 2014Publication date: December 29, 2016Inventors: Tsunenori NOMAGUCHI, Toshihide AGEMURA, Zulihuma YASENJIANG
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Patent number: 9478389Abstract: The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables high-resolution observation while a sample is placed at the position of a cross point. The present invention has the following configuration. A composite charged particle beam device is provided with a plurality of charged particle beam columns (101a, 102a), and is characterized in that a sample (103) is disposed at the position of an intersection point (171) where the optical axes of the plurality of columns intersect, a component (408a, 408b) that forms the tip of an objective lens of the charged particle beam column (102a) is detachable, and by replacing the component (408a, 408b), the distance between the intersection point (171) and the tip of the charge particle beam column can be changed.Type: GrantFiled: July 1, 2013Date of Patent: October 25, 2016Assignee: Hitachi High-Technologies CorporationInventors: Tsunenori Nomaguchi, Toshihide Agemura