Abstract: Aiming for easily carrying out an energy discrimination or an angle discrimination of a secondary particle emitted from a sample or easily setting an optimal observation condition, a charged particle beam apparatus is provided with a charged particle source for emitting a charged particle beam, a lens for focusing the charged particle beam to a sample, a detector for detecting a secondary particle emitted from the sample, and an orbit simulator for calculating a position at which the secondary particle emitted from the sample arrives; and in this structure, the orbit simulator calculates an orbit of a secondary particle that satisfies a predetermined condition, and a sample image is formed by using a signal detected at a position where the secondary particle satisfying the predetermined condition arrives at the detector.

Abstract: This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam (5) when the electron beam is passing through an objective lens; and a first detector (8) and a second detector (7) that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (9A). When the distance between the tip (13) at the sample side of the objective lens and the sensitive surface of the first detector is L1 and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L2, then L1/L2?5/9.

Abstract: The present invention relates to modulating an irradiation condition of a charged particle beam at high speed and detecting a signal in synchronization with a modulation period for the purpose of extracting a signal arising from a certain charged particle beam when a sample is irradiated with a plurality of charged particle beams simultaneously or, for example, for the purpose of separating a secondary electron signal arising from ion beam irradiation and a secondary electron signal arising from electron beam irradiation in an FIB-SEM system. The present invention further relates to dispersing light emitted from two or more kinds of scintillators having different light emitting properties, detecting each signal strength, and processing a signal on the basis of a ratio of first signal strength when the sample is irradiated with a first charged particle beam alone to second signal strength when the sample is irradiated with a second charged particle beam alone, the ratio being set by a mechanism.

Abstract: The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables high-resolution observation while a sample is placed at the position of a cross point. The present invention has the following configuration. A composite charged particle beam device is provided with a plurality of charged particle beam columns (101a, 102a), and is characterized in that a sample (103) is disposed at the position of an intersection point (171) where the optical axes of the plurality of columns intersect, a component (408a, 408b) that forms the tip of an objective lens of the charged particle beam column (102a) is detachable, and by replacing the component (408a, 408b), the distance between the intersection point (171) and the tip of the charge particle beam column can be changed.

Abstract: Aiming for easily carrying out an energy discrimination or an angle discrimination of a secondary particle emitted from a sample or easily setting an optimal observation condition, a charged particle beam apparatus is provided with a charged particle source for emitting a charged particle beam, a lens for focusing the charged particle beam to a sample, a detector for detecting a secondary particle emitted from the sample, and an orbit simulator for calculating a position at which the secondary particle emitted from the sample arrives; and in this structure, the orbit simulator calculates an orbit of a secondary particle that satisfies a predetermined condition, and a sample image is formed by using a signal detected at a position where the secondary particle satisfying the predetermined condition arrives at the detector.

Abstract: A charged particle beam apparatus that easily discriminates the angles and energy of the SE or the BSE, and images information necessary for a sample to be observed. The charged particle beam apparatus having a charged particle source that emits a primary charged particle beam, a condenser lens that condenses the primary charged particle beam on a sample, and a detector that detects secondary charged particles emitted from a radiated point on the sample, the charged particle beam apparatus including: a pulse processing unit that subjects a signal from the detector to pulse processing, and creates energy distribution information of the secondary charged particles; and a control unit that selects information in an arbitrary energy region of the energy distribution information, and display an image on a display unit.

Abstract: A charged particle beam device includes: a sample stage (146) supporting a sample; a charged particle beam optical system that focuses a charged particle beam from a charged particle source on the sample; a charged particle beam column (101) housing the charged particle beam optical system; a first differential evacuation diaphragm (108) attached to the charged particle beam column (101); a frontal sample chamber (103) disposed in connection with the charged particle beam column (101) via the first differential evacuation diaphragm (108); a second differential evacuation diaphragm (109) attached to the frontal sample chamber (103); a first vacuum pump (141) for evacuating the charged particle beam column (101); and a second vacuum pump (142) for evacuating the frontal sample chamber (103).

Abstract: A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.

Abstract: An object of the present invention is related to detecting of a detection signal at an optimum position in such a case that a sample plane is inclined with respect to a charged particle beam. The present invention is related to a charged particle beam apparatus for irradiating a charged particle beam to a sample, in which a detector is moved to a plurality of desirable positions around the sample so as to optimize positions of the detector. In accordance with the present invention, since it is possible to obtain an optimum detection signal in response to an attitude and a shape of the sample, a highly accurate sample observation, for instance, an SEM observation, an STEM observation, and an FIB observation can be carried out. Moreover, in an FIB-SEM apparatus, it is possible to highly accurately detect an end point of an FIB process.

Abstract: There is provided a technology which allows SEM observation in real time without deteriorating the processing efficiency in FIB processing. In the present invention, a composite charged-particle-beam apparatus having a FIB column and a SEM column includes an SE3 detector which detects secondary electrons (referred to as tertiary electrons in this specification) discharged when back-scattered electrons generated by irradiating a sample with an electron beam collide with structures in a sample chamber. With use of the tertiary electrons, a SEM image is generated, and based on the SEM image, an ion beam processing state can be observed.

Abstract: A precision of removal of a damaged layer of a sample created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer generated by an ion beam, transmitted electrons which are generated by irradiating an electron beam formed in an electron beam optics system onto a sample are detected by a two-dimensional detector, and a moment for finishing the removal machining of the damaged layer is determined based on the amount of blur of a diffraction pattern acquired with the two-dimensional detector.

Abstract: In order to provide a charged particle beam apparatus capable of irradiating a desired region in the surface of a sample with a charged particle beam from a wide range of angles, an electrode unit (204) comprising an electrode, the inclination angle of which (i.e. the angle of inclination relative to a plane orthogonal to the extension line of the center axis of the ion beam column (201a)) and the position of which (i.e. the position in the direction along the extension line of the center axis of the ion beam column (201a) and in directions orthogonal thereto) can be adjusted, is arranged within a sample chamber (203) of the charged particle beam apparatus. The charged particle beam apparatus is also configured so that a curved ion beam (201b) is irradiated onto a surface of a sample (202) by the electrode. This enables irradiation of the ion beam (201b) to a desired range within the surface of the sample (202), from a wide range of angles with respect to the sample surface.

Abstract: A composite charged particle beams apparatus of the present invention allows a sample (5)'s cross-section or edge plane to be observed by using an electron beam (2b), the sample (5)'s cross-section or edge plane being fabricated by using an ion beam (1b). The radiation device includes a detector (7) which is capable of detecting low-loss back-scattered electrons (12) including elastically-scattered electrons (11), these electrons (12, 11) being induced by the electron beam (2b) with which the sample (5)'s cross-section or edge plane is irradiated. Moreover, it is desirable that the detector (7) be set up in a space outside an electron-beam column (2a). The above-described configuration has allowed implementation of the high-resolving-power and low-damage SEM observation of the surface information about material and composition of the sample's FIB-fabricated cross-section or edge plane.

Abstract: There is provided a technology which allows SEM observation in real time without deteriorating the processing efficiency in FIB processing. In the present invention, a composite charged-particle-beam apparatus having a FIB column and a SEM column includes an SE3 detector which detects secondary electrons (referred to as tertiary electrons in this specification) discharged when back-scattered electrons generated by irradiating a sample with an electron beam collide with structures in a sample chamber. With use of the tertiary electrons, a SEM image is generated, and based on the SEM image, an ion beam processing state can be observed.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.

Abstract: A composite charged particle beams apparatus of the present invention allows a sample (5)'s cross-section or edge plane to be observed by using an electron beam (2b), the sample (5)'s cross-section or edge plane being fabricated by using an ion beam (1b). The radiation device includes a detector (7) which is capable of detecting low-loss back-scattered electrons (12) including elastically-scattered electrons (11), these electrons (12, 11) being induced by the electron beam (2b) with which the sample (5)'s cross-section or edge plane is irradiated. Moreover, it is desirable that the detector (7) be set up in a space outside an electron-beam column (2a). The above-described configuration has allowed implementation of the high-resolving-power and low-damage SEM observation of the surface information about material and composition of the sample's FIB-fabricated cross-section or edge plane.

Abstract: An object of the present invention is related to detecting of a detection signal at an optimum position in such a case that a sample plane is inclined with respect to a charged particle beam. The present invention is related to a charged particle beam apparatus for irradiating a charged particle beam to a sample, in which a detector is moved to a plurality of desirable positions around the sample so as to optimize positions of the detector. In accordance with the present invention, since it is possible to obtain an optimum detection signal in response to an attitude and a shape of the sample, a highly accurate sample observation, for instance, an SEM observation, an STEM observation, and an FIB observation can be carried out. Moreover, in an FIB-SEM apparatus, it is possible to highly accurately detect an end point of an FIB process.

Abstract: A charged particle beam apparatus facilitating adjusting a beam center axis of a charged particle beam in a case where optical conditions are modified or in a case where the beam center axis of the charged particle beam is moved due to state variation of the apparatus. When the beam center axis of a primary charged particle beam is adjusted with a deflector (aligner), a first processing step for measuring the sensitivity of the aligner and a second processing step for detecting the deviation between the center of the primary charged particle beam and the center of the objective aperture are provided. The charged particle beam apparatus determines the aligner set values, using the aligner sensitivity measured in the first processing step and the amount of deviation detected in the second processing step, such that the primary charged particle beam passes through the center of the objective aperture and controls the aligner using the aligner set values.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.