Patents by Inventor Toshihide Suto
Toshihide Suto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230251334Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.Type: ApplicationFiled: April 12, 2023Publication date: August 10, 2023Applicant: TDK CORPORATIONInventors: Yongfu CAI, Toshihide SUTO
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Patent number: 11650272Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.Type: GrantFiled: April 12, 2021Date of Patent: May 16, 2023Assignee: TDK CORPORATIONInventors: Yongfu Cai, Toshihide Suto
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Publication number: 20220268861Abstract: A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.Type: ApplicationFiled: May 13, 2022Publication date: August 25, 2022Inventor: Toshihide SUTO
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Patent number: 11366183Abstract: A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.Type: GrantFiled: December 12, 2018Date of Patent: June 21, 2022Assignee: TDK CorporationInventor: Toshihide Suto
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Patent number: 11204263Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.Type: GrantFiled: June 9, 2020Date of Patent: December 21, 2021Assignee: TDK CORPORATIONInventors: Tsuyoshi Umehara, Keisuke Uchida, Toshihide Suto, Hiraku Hirabayashi
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Publication number: 20210231755Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Applicant: TDK CORPORATIONInventors: Yongfu CAI, Toshihide SUTO
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Patent number: 10996291Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.Type: GrantFiled: March 18, 2019Date of Patent: May 4, 2021Assignee: TDK CORPORATIONInventors: Yongfu Cai, Toshihide Suto
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Publication number: 20200300669Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.Type: ApplicationFiled: June 9, 2020Publication date: September 24, 2020Applicant: TDK CORPORATIONInventors: Tsuyoshi UMEHARA, Keisuke UCHIDA, Toshihide SUTO, Hiraku HIRABAYASHI
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Patent number: 10712178Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.Type: GrantFiled: September 6, 2018Date of Patent: July 14, 2020Assignee: TDK CORPORATIONInventors: Keisuke Uchida, Tsuyoshi Umehara, Toshihide Suto, Hiraku Hirabayashi
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Publication number: 20190285709Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.Type: ApplicationFiled: March 18, 2019Publication date: September 19, 2019Applicant: TDK CorporationInventors: Yongfu CAI, Toshihide SUTO
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Publication number: 20190195967Abstract: A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.Type: ApplicationFiled: December 12, 2018Publication date: June 27, 2019Inventor: Toshihide SUTO
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Patent number: 10312286Abstract: A magnetic sensor for detecting a component of an external magnetic field in a specific direction includes a resistor array including a plurality of resistive element sections each having a magnetoresistance element. Each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.Type: GrantFiled: December 29, 2015Date of Patent: June 4, 2019Assignee: TDK CorporationInventors: Toshihide Suto, Hiraku Hirabayashi
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Publication number: 20190128699Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.Type: ApplicationFiled: September 6, 2018Publication date: May 2, 2019Applicant: TDK CORPORATIONInventors: Keisuke UCHIDA, Tsuyoshi UMEHARA, Toshihide SUTO, Hiraku HIRABAYASHI
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Publication number: 20160204161Abstract: A magnetic sensor for detecting a component of an external magnetic field in a specific direction includes a resistor array including a plurality of resistive element sections each having a magnetoresistance element. Each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.Type: ApplicationFiled: December 29, 2015Publication date: July 14, 2016Inventors: Toshihide Suto, Hiraku Hirabayashi
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Patent number: 8896304Abstract: A magnetic sensor includes first and second MR elements, and an electrode electrically connecting the first and second MR elements to each other. The electrode includes a first portion having a first surface, a second portion having a second surface, and a coupling portion coupling the first and second portions to each other. The first surface is in contact with an end face of the first MR element. The second surface is in contact with an end face of the second MR element. Each of the first and second surfaces has a three-hold or higher rotationally symmetric shape. The diameter of a first inscribed circle inscribed in the outer edge of the first surface and the diameter of the second inscribed circle inscribed in the outer edge of the second surface are greater than the width of the coupling portion.Type: GrantFiled: February 26, 2013Date of Patent: November 25, 2014Assignee: TDK CorporationInventor: Toshihide Suto
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Publication number: 20140009145Abstract: A magnetic sensor includes first and second MR elements, and an electrode electrically connecting the first and second MR elements to each other. The electrode includes a first portion having a first surface, a second portion having a second surface, and a coupling portion coupling the first and second portions to each other. The first surface is in contact with an end face of the first MR element. The second surface is in contact with an end face of the second MR element. Each of the first and second surfaces has a three-hold or higher rotationally symmetric shape. The diameter of a first inscribed circle inscribed in the outer edge of the first surface and the diameter of the second inscribed circle inscribed in the outer edge of the second surface are greater than the width of the coupling portion.Type: ApplicationFiled: February 26, 2013Publication date: January 9, 2014Applicant: TDK CORPORATIONInventor: Toshihide SUTO
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Publication number: 20100140651Abstract: The present invention provides a diffraction grating light-emitting diode in which the external quantum efficiency is improved by appropriately setting the period of holes when the holes are two-dimensionally periodically formed. A light-emitting diode is configured by laminating, on a sapphire substrate, an n-type GaN layer, an InGaN/GaN active layer, a p-type GaN layer, and a transparent electrode layer. Further, a large number of holes are two-dimensionally periodically formed in the transparent electrode layer, the p-type GaN layer, the InGaN/GaN active layer, and the n-type GaN layer so as to extend in a direction substantially perpendicular to these layers.Type: ApplicationFiled: February 11, 2010Publication date: June 10, 2010Applicant: ALPS ELECTRIC CO., LTD.Inventors: Susumu NODA, Takashi ASANO, Masayuki FUJITA, Hitoshi KITAGAWA, Toshihide SUTO
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Patent number: 7319581Abstract: A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.Type: GrantFiled: December 2, 2005Date of Patent: January 15, 2008Assignee: ALPS Electric Co., Ltd.Inventors: Toshihide Suto, Shigefumi Sakai, Sasahiro Takahashi
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Publication number: 20060133006Abstract: A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.Type: ApplicationFiled: December 2, 2005Publication date: June 22, 2006Inventors: Toshihide Suto, Shigefumi Sakai, Sasahiro Takahashi