Patents by Inventor Toshihide Suto

Toshihide Suto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220268861
    Abstract: A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.
    Type: Application
    Filed: May 13, 2022
    Publication date: August 25, 2022
    Inventor: Toshihide SUTO
  • Patent number: 11366183
    Abstract: A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: June 21, 2022
    Assignee: TDK Corporation
    Inventor: Toshihide Suto
  • Patent number: 11204263
    Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: December 21, 2021
    Assignee: TDK CORPORATION
    Inventors: Tsuyoshi Umehara, Keisuke Uchida, Toshihide Suto, Hiraku Hirabayashi
  • Publication number: 20210231755
    Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Applicant: TDK CORPORATION
    Inventors: Yongfu CAI, Toshihide SUTO
  • Patent number: 10996291
    Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: May 4, 2021
    Assignee: TDK CORPORATION
    Inventors: Yongfu Cai, Toshihide Suto
  • Publication number: 20200300669
    Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Applicant: TDK CORPORATION
    Inventors: Tsuyoshi UMEHARA, Keisuke UCHIDA, Toshihide SUTO, Hiraku HIRABAYASHI
  • Patent number: 10712178
    Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: July 14, 2020
    Assignee: TDK CORPORATION
    Inventors: Keisuke Uchida, Tsuyoshi Umehara, Toshihide Suto, Hiraku Hirabayashi
  • Publication number: 20190285709
    Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 19, 2019
    Applicant: TDK Corporation
    Inventors: Yongfu CAI, Toshihide SUTO
  • Publication number: 20190195967
    Abstract: A magnetic sensor according to the invention has a magnetoresistive element having a multi-layer structure and a magnetically sensitive axis, and at least a soft magnetic body that is arranged near the magnetoresistive element. The soft magnetic body has a sloping line at least at a corner thereof, wherein the sloping line is tilted with respect to two sides of the soft magnetic body that extend to the corner, as viewed in a stacking direction of the magnetoresistive element.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 27, 2019
    Inventor: Toshihide SUTO
  • Patent number: 10312286
    Abstract: A magnetic sensor for detecting a component of an external magnetic field in a specific direction includes a resistor array including a plurality of resistive element sections each having a magnetoresistance element. Each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: June 4, 2019
    Assignee: TDK Corporation
    Inventors: Toshihide Suto, Hiraku Hirabayashi
  • Publication number: 20190128699
    Abstract: A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.
    Type: Application
    Filed: September 6, 2018
    Publication date: May 2, 2019
    Applicant: TDK CORPORATION
    Inventors: Keisuke UCHIDA, Tsuyoshi UMEHARA, Toshihide SUTO, Hiraku HIRABAYASHI
  • Publication number: 20160204161
    Abstract: A magnetic sensor for detecting a component of an external magnetic field in a specific direction includes a resistor array including a plurality of resistive element sections each having a magnetoresistance element. Each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.
    Type: Application
    Filed: December 29, 2015
    Publication date: July 14, 2016
    Inventors: Toshihide Suto, Hiraku Hirabayashi
  • Patent number: 8896304
    Abstract: A magnetic sensor includes first and second MR elements, and an electrode electrically connecting the first and second MR elements to each other. The electrode includes a first portion having a first surface, a second portion having a second surface, and a coupling portion coupling the first and second portions to each other. The first surface is in contact with an end face of the first MR element. The second surface is in contact with an end face of the second MR element. Each of the first and second surfaces has a three-hold or higher rotationally symmetric shape. The diameter of a first inscribed circle inscribed in the outer edge of the first surface and the diameter of the second inscribed circle inscribed in the outer edge of the second surface are greater than the width of the coupling portion.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: November 25, 2014
    Assignee: TDK Corporation
    Inventor: Toshihide Suto
  • Publication number: 20140009145
    Abstract: A magnetic sensor includes first and second MR elements, and an electrode electrically connecting the first and second MR elements to each other. The electrode includes a first portion having a first surface, a second portion having a second surface, and a coupling portion coupling the first and second portions to each other. The first surface is in contact with an end face of the first MR element. The second surface is in contact with an end face of the second MR element. Each of the first and second surfaces has a three-hold or higher rotationally symmetric shape. The diameter of a first inscribed circle inscribed in the outer edge of the first surface and the diameter of the second inscribed circle inscribed in the outer edge of the second surface are greater than the width of the coupling portion.
    Type: Application
    Filed: February 26, 2013
    Publication date: January 9, 2014
    Applicant: TDK CORPORATION
    Inventor: Toshihide SUTO
  • Publication number: 20100140651
    Abstract: The present invention provides a diffraction grating light-emitting diode in which the external quantum efficiency is improved by appropriately setting the period of holes when the holes are two-dimensionally periodically formed. A light-emitting diode is configured by laminating, on a sapphire substrate, an n-type GaN layer, an InGaN/GaN active layer, a p-type GaN layer, and a transparent electrode layer. Further, a large number of holes are two-dimensionally periodically formed in the transparent electrode layer, the p-type GaN layer, the InGaN/GaN active layer, and the n-type GaN layer so as to extend in a direction substantially perpendicular to these layers.
    Type: Application
    Filed: February 11, 2010
    Publication date: June 10, 2010
    Applicant: ALPS ELECTRIC CO., LTD.
    Inventors: Susumu NODA, Takashi ASANO, Masayuki FUJITA, Hitoshi KITAGAWA, Toshihide SUTO
  • Patent number: 7319581
    Abstract: A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.
    Type: Grant
    Filed: December 2, 2005
    Date of Patent: January 15, 2008
    Assignee: ALPS Electric Co., Ltd.
    Inventors: Toshihide Suto, Shigefumi Sakai, Sasahiro Takahashi
  • Publication number: 20060133006
    Abstract: A capacitive pressure sensor includes: a conductive silicon substrate having a diaphragm; an insulating substrate having a fixed electrode, the insulating substrate overlapping the conductive silicon substrate so as to be bonded thereto; and a sealed chamber formed between the diaphragm and the fixed electrode. A conductive silicon member is buried in a part of the insulating substrate, a portion of the conductive silicon member is exposed toward a surface of the insulating substrate facing the sealed chamber so as to form the fixed electrode, and another portion of the conductive silicon member is exposed toward the other surface of the insulating substrate not facing the sealed chamber so as to form a lead electrode of the fixed electrode.
    Type: Application
    Filed: December 2, 2005
    Publication date: June 22, 2006
    Inventors: Toshihide Suto, Shigefumi Sakai, Sasahiro Takahashi