Patents by Inventor Toshihiko Fujii

Toshihiko Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210167489
    Abstract: An antenna device for a vehicle includes a camera that facilitates assembly. The antenna device for a vehicle includes: an antenna case that has a housing space formed therein; an antenna base that is covered with the antenna case from above to form the housing space; an antenna element that is held by the antenna base and housed in the housing space; and a camera that is housed in the housing space The antenna base has a wall portion extending upward. The camera is fixed to the wall portion.
    Type: Application
    Filed: April 11, 2019
    Publication date: June 3, 2021
    Applicant: YOKOWO CO., LTD.
    Inventors: Kentaro HAYASHI, Toshihiko FUJII
  • Patent number: 10645823
    Abstract: An electronic device includes: a circuit board; a case within which the circuit board is provided and which has a plurality of first contact parts to contact with the circuit board; a cover which has a plurality of second contact parts to contact with the circuit board; a hook part which is provided to one of the case and the cover; and a receiving part which is provided to other of the case and the cover and which corresponds to the hook part, and the hook part engages with the receiving part, whereby the cover is fitted onto the case and the plurality of first contact parts of the case and the plurality of second contact parts of the cover hold and fix the circuit board interposed therebetween.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: May 5, 2020
    Assignee: DENSO TEN Limited
    Inventors: Nobutaka Watanabe, Yasuaki Takeda, Toshihiko Fujii
  • Publication number: 20190313538
    Abstract: An electronic device includes: a circuit board; a case within which the circuit board is provided and which has a plurality of first contact parts to contact with the circuit board; a cover which has a plurality of second contact parts to contact with the circuit board; a hook part which is provided to one of the case and the cover; and a receiving part which is provided to other of the case and the cover and which corresponds to the hook part, and the hook part engages with the receiving part, whereby the cover is fitted onto the case and the plurality of first contact parts of the case and the plurality of second contact parts of the cover hold and fix the circuit board interposed therebetween.
    Type: Application
    Filed: February 14, 2019
    Publication date: October 10, 2019
    Applicant: DENSO TEN Limited
    Inventors: Nobutaka WATANABE, Yasuaki TAKEDA, Toshihiko FUJII
  • Patent number: 9821935
    Abstract: In a state where an engaging tab and a tab receiver are engaged with each other, the engaging tab is elastically deformed and thus a first end of a second portion applies a force to the tab receiver, the force applied toward a first side of a case.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: November 21, 2017
    Assignee: FUJITSU TEN LIMITED
    Inventors: Toshihiko Fujii, Yasuaki Takeda
  • Publication number: 20160295724
    Abstract: In a state where an engaging tab and a tab receiver are engaged with each other, the engaging tab is elastically deformed and thus a first end of a second portion applies a force to the tab receiver, the force applied toward a first side of a case.
    Type: Application
    Filed: February 24, 2016
    Publication date: October 6, 2016
    Applicant: FUJITSU TEN LIMITED
    Inventors: Toshihiko FUJII, Yasuaki TAKEDA
  • Patent number: 9372404
    Abstract: The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.
    Type: Grant
    Filed: April 30, 2013
    Date of Patent: June 21, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeru Watanabe, Seiichiro Tachibana, Toshihiko Fujii, Kazumi Noda, Toshiharu Yano, Takeshi Kinsho
  • Patent number: 9230827
    Abstract: The present invention provides a method for forming a resist under layer film used in a lithography process, comprising: a process for applying a composition for forming a resist under layer film containing an organic compound having an aromatic unit on a substrate; and a process for heat-treating the resist under layer film applied in an atmosphere whose oxygen concentration is 10% or more at 150° C. to 600° C. for 10 to 600 seconds after heat-treating the same in an atmosphere whose oxygen concentration is less than 10% at 50 to 350° C. There can be provided a method for forming a resist under layer film having excellent filling/flattening properties so that unevenness on a substrate can be flattened even in complex processes such as multi-layer resist method and double patterning.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: January 5, 2016
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shiori Nonaka, Seiichiro Tachibana, Daisuke Kori, Toshihiko Fujii, Tsutomu Ogihara
  • Patent number: 9076738
    Abstract: The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: July 7, 2015
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeru Watanabe, Toshihiko Fujii, Takeshi Kinsho, Tsutomu Ogihara
  • Publication number: 20140335692
    Abstract: The present invention provides a method for forming a resist under layer film used in a lithography process, comprising: a process for applying a composition for forming a resist under layer film containing an organic compound having an aromatic unit on a substrate; and a process for heat-treating the resist under layer film applied in an atmosphere whose oxygen concentration is 10% or more at 150° C. to 600° C. for 10 to 600 seconds after heat-treating the same in an atmosphere whose oxygen concentration is less than 10% at 50 to 350° C. There can be provided a method for forming a resist under layer film having excellent filling/flattening properties so that unevenness on a substrate can be flattened even in complex processes such as multi-layer resist method and double patterning.
    Type: Application
    Filed: April 15, 2014
    Publication date: November 13, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Shiori NONAKA, Seiichiro TACHIBANA, Daisuke KORI, Toshihiko FUJII, Tsutomu OGIHARA
  • Patent number: 8877422
    Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: November 4, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Daisuke Kori, Yusuke Biyajima, Toshihiko Fujii, Takeru Watanabe, Takeshi Kinsho
  • Patent number: 8853031
    Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: October 7, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Daisuke Kori, Yusuke Biyajima, Takeru Watanabe, Toshihiko Fujii, Takeshi Kinsho
  • Patent number: 8835092
    Abstract: There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
    Type: Grant
    Filed: January 27, 2011
    Date of Patent: September 16, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeru Watanabe, Takeshi Kinsho, Tsutomu Ogihara, Katsuya Takemura, Toshihiko Fujii, Daisuke Kori
  • Patent number: 8663898
    Abstract: There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: March 4, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takeru Watanabe, Yusuke Biyajima, Daisuke Kori, Takeshi Kinsho, Toshihiko Fujii
  • Patent number: 8652757
    Abstract: A method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, includes a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. A method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: February 18, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Toshihiko Fujii, Tsutomu Ogihara
  • Patent number: 8603732
    Abstract: There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: December 10, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takeru Watanabe, Takeshi Kinsho, Katsuya Takemura, Toshihiko Fujii, Daisuke Kori
  • Patent number: 8592956
    Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
    Type: Grant
    Filed: November 9, 2011
    Date of Patent: November 26, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Daisuke Kori, Yusuke Biyajima, Takeru Watanabe, Toshihiko Fujii, Takeshi Kinsho
  • Publication number: 20130302990
    Abstract: The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.
    Type: Application
    Filed: April 30, 2013
    Publication date: November 14, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takeru WATANABE, Seiichiro TACHIBANA, Toshihiko FUJII, Kazumi NODA, Toshiharu YANO, Takeshi KINSHO
  • Patent number: 8450048
    Abstract: There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: May 28, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Toshihiko Fujii, Tsutomu Ogihara
  • Patent number: 8338078
    Abstract: A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: December 25, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Toshihiko Fujii, Takeru Watanabe, Youichi Ohsawa
  • Publication number: 20120184103
    Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
    Type: Application
    Filed: December 7, 2011
    Publication date: July 19, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Daisuke KORI, Yusuke BIYAJIMA, Takeru WATANABE, Toshihiko FUJII, Takeshi KINSHO