Patents by Inventor Toshihiko Nagase

Toshihiko Nagase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10985210
    Abstract: A nonvolatile storage device includes first and second interconnections and a memory cell between the first and second interconnections. The memory cell includes a storage element, a first switch, and a second switch. The first switch has two terminals and transitions from an off-state to an on-state when a first threshold voltage is applied between its terminals and then voltage between the terminals falls to a first hold voltage. The second switch has two terminals and transitions from an off-state to an on-state when a second threshold voltage is applied between its terminals and then voltage between the terminals falls to a second hold voltage. An off-current of the first switch is less than an off-current of the second switch. The first threshold voltage is greater than the second threshold voltage, which is greater than the first hold voltage, which is greater than or equal to the second hold voltage.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: April 20, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masahiko Nakayama, Toshihiko Nagase, Tomomi Funayama, Hironobu Furuhashi, Kazumasa Sunouchi
  • Patent number: 10964884
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first surface in contact with the nonmagnetic layer and a second surface on an opposite side to the first surface, a diameter of the second surface of the first magnetic layer is less than a diameter of the first surface of the first magnetic layer and is 10 nm or more, and a ratio of a height of the first magnetic layer to the diameter of the second surface of the first magnetic layer is 0.9 or more.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: March 30, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke Watanabe, Toshihiko Nagase
  • Patent number: 10964883
    Abstract: According to one embodiment, a magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element including: a first ferromagnetic layer; a second ferromagnetic layer; a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a second non-magnetic layer at an opposite side of the first non-magnetic layer relative to the first ferromagnetic layer; and a third non-magnetic layer at an opposite side of the first ferromagnetic layer relative to the second non-magnetic layer. The second non-magnetic layer including rare-earth oxide, and the third non-magnetic layer including ruthenium (Ru) or molybdenum (Mo).
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: March 30, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke Watanabe, Toshihiko Nagase
  • Publication number: 20210087669
    Abstract: A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.
    Type: Application
    Filed: August 26, 2020
    Publication date: March 25, 2021
    Applicant: Kioxia Corporation
    Inventors: Yuta KONNO, Toshihiko Nagase, Atsuko Sakata, Kohei Nagata, Ryohei Kitao, Akifumi Gawase, Takeshi Iwasaki
  • Publication number: 20210083007
    Abstract: According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.
    Type: Application
    Filed: February 27, 2020
    Publication date: March 18, 2021
    Inventors: Hiroki KAWAI, Daisuke WATANABE, Toshihiko NAGASE
  • Patent number: 10910032
    Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: February 2, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Tatsuya Kishi, Tsuneo Inaba, Daisuke Watanabe, Masahiko Nakayama, Nobuyuki Ogata, Masaru Toko, Hisanori Aikawa, Jyunichi Ozeki, Toshihiko Nagase, Young Min Eeh, Kazuya Sawada
  • Patent number: 10873021
    Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: December 22, 2020
    Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Young Min Eeh, Daisuke Watanabe, Jae-Hyoung Lee, Toshihiko Nagase, Kazuya Sawada, Tadaaki Oikawa, Kenichi Yoshino, Taiga Isoda
  • Patent number: 10854252
    Abstract: According to one embodiment, a device includes an element including: a first stacked; a first nonmagnet on the first stacked; a second stacked on the first nonmagnet; a second nonmagnet on the second stacked; and a first magnet on the second nonmagnet. The second stacked including: a second magnet in contact with the second nonmagnet, including Fe and Co; a third nonmagnet at an opposite side of the second nonmagnet relative to the second magnet, including Mo or W; and a third magnet on the first nonmagnet, in contact with the third nonmagnet, including Fe and Co. An atomic ratio of Fe in the third magnet is lower than an atomic ratio of Fe in the second magnet.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: December 1, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Toshihiko Nagase, Daisuke Watanabe
  • Publication number: 20200303632
    Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first nonmagnet, a second nonmagnet, a first ferromagnet between the first nonmagnet and the second nonmagnet, a third nonmagnet including a rare-earth oxide, the second nonmagnet between the first ferromagnet and the third nonmagnet, and a fourth nonmagnet between the second nonmagnet and the third nonmagnet and including a metal.
    Type: Application
    Filed: September 10, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke WATANABE, Toshihiko NAGASE, Koji UEDA, Young Min EEH
  • Publication number: 20200303455
    Abstract: A nonvolatile storage device includes first and second interconnections and a memory cell between the first and second interconnections. The memory cell includes a storage element, a first switch, and a second switch. The first switch has two terminals and transitions from an off-state to an on-state when a first threshold voltage is applied between its terminals and then voltage between the terminals falls to a first hold voltage. The second switch has two terminals and transitions from an off-state to an on-state when a second threshold voltage is applied between its terminals and then voltage between the terminals falls to a second hold voltage. An off-current of the first switch is less than an off-current of the second switch. The first threshold voltage is greater than the second threshold voltage, which is greater than the first hold voltage, which is greater than or equal to the second hold voltage.
    Type: Application
    Filed: September 3, 2019
    Publication date: September 24, 2020
    Inventors: Masahiko NAKAYAMA, Toshihiko NAGASE, Tomomi FUNAYAMA, Hironobu FURUHASHI, Kazumasa SUNOUCHI
  • Publication number: 20200303626
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first surface in contact with the nonmagnetic layer and a second surface on an opposite side to the first surface, a diameter of the second surface of the first magnetic layer is less than a diameter of the first surface of the first magnetic layer and is 10 nm or more, and a ratio of a height of the first magnetic layer to the diameter of the second surface of the first magnetic layer is 0.9 or more.
    Type: Application
    Filed: September 10, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke WATANABE, Toshihiko NAGASE
  • Patent number: 10707269
    Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: July 7, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Toshihiko Nagase, Daisuke Watanabe, Koji Ueda, Tadashi Kai, Kazumasa Sunouchi
  • Publication number: 20200091227
    Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
    Type: Application
    Filed: March 14, 2019
    Publication date: March 19, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masayoshi IWAYAMA, Tatsuya KISHI, Masahiko NAKAYAMA, Toshihiko NAGASE, Daisuke WATANABE, Tadashi KAI
  • Publication number: 20200083285
    Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 12, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Toshihiko NAGASE, Daisuke WATANABE, Koji UEDA, Tadashi KAI, Kazumasa SUNOUCHI
  • Patent number: 10586917
    Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: March 10, 2020
    Assignees: SK hynix Inc., TOSHIBA MEMORY CORPORATION
    Inventors: Jong-Koo Lim, Won-Joon Choi, Guk-Cheon Kim, Yang-Kon Kim, Ku-Youl Jung, Toshihiko Nagase, Youngmin Eeh, Daisuke Watanabe, Kazuya Sawada, Makoto Nagamine
  • Publication number: 20200075841
    Abstract: According to one embodiment, a magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element including: a first ferromagnetic layer; a second ferromagnetic layer; a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a second non-magnetic layer at an opposite side of the first non-magnetic layer relative to the first ferromagnetic layer; and a third non-magnetic layer at an opposite side of the first ferromagnetic layer relative to the second non-magnetic layer. The second non-magnetic layer including rare-earth oxide, and the third non-magnetic layer including ruthenium (Ru) or molybdenum (Mo).
    Type: Application
    Filed: March 11, 2019
    Publication date: March 5, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke WATANABE, Toshihiko NAGASE
  • Publication number: 20200075072
    Abstract: According to one embodiment, a device includes an element including: a first stacked; a first nonmagnet on the first stacked; a second stacked on the first nonmagnet; a second nonmagnet on the second stacked; and a first magnet on the second nonmagnet. The second stacked including: a second magnet in contact with the second nonmagnet, including Fe and Co; a third nonmagnet at an opposite side of the second nonmagnet relative to the second magnet, including Mo or W; and a third magnet on the first nonmagnet, in contact with the third nonmagnet, including Fe and Co. An atomic ratio of Fe in the third magnet is lower than an atomic ratio of Fe in the second magnet.
    Type: Application
    Filed: March 4, 2019
    Publication date: March 5, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Toshihiko NAGASE, Daisuke WATANABE
  • Patent number: 10510950
    Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer, a magnetization direction of the second magnetic layer being invariable, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer has a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers. The magnetoresistive memory device further includes nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: December 17, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke Watanabe, Toshihiko Nagase, Youngmin Eeh, Kazuya Sawada, Makoto Nagamine, Tadaaki Oikawa, Kenichi Yoshino, Hiroyuki Ohtori
  • Patent number: 10490732
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: November 26, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yasuyuki Sonoda, Daisuke Watanabe, Masatoshi Yoshikawa, Youngmin Eeh, Shuichi Tsubata, Toshihiko Nagase, Yutaka Hashimoto, Kazuya Sawada, Kazuhiro Tomioka, Kenichi Yoshino, Tadaaki Oikawa
  • Patent number: 10468170
    Abstract: According to one embodiment, a magnetic device comprising a magnetoresistive effect element, wherein the magnetoresistive effect element includes: a first ferromagnetic body, a second ferromagnetic body, and a first rare-earth ferromagnetic oxide that is provided between the first ferromagnetic body and the second ferromagnetic body and magnetically joins the first ferromagnetic body and the second ferromagnetic body.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: November 5, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Young Min Eeh, Toshihiko Nagase, Daisuke Watanabe, Kazuya Sawada, Tadaaki Oikawa, Kenichi Yoshino