Patents by Inventor Toshihiko Nagase
Toshihiko Nagase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190080833Abstract: According to one emcodiment, a magnetic device comprising a magnetoresistive effect element, wherein the magnetoresistive effect element; includes: a first ferromagnetic body, a second ferromagnetic body, and a first rare-earth ferromagnetic oxide that is provided between the first ferromagnetic body and the second ferromagnetic body and magnetically joins the first ferromagnetic body and the second ferromagnetic body.Type: ApplicationFiled: March 13, 2018Publication date: March 14, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Young Min EEH, Toshihiko NAGASE, Daisuke WATANABE, Kazuya SAWADA, Tadaaki OIKAWA, Kenichi YOSHINO
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Publication number: 20190080739Abstract: According to one embodiment, a magnetoresistive element includes: a first magnetic layer having a magnetization direction that is variable; a second magnetic layer having a magnetization direction that is invariable; a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a third magnetic layer that fixes the magnetization direction of the second magnetic layer and that antiferromagnetically couples with the second magnetic layer; and a second non-magnetic layer provided between the second magnetic layer and the third magnetic layer. The second non-magnetic layer includes ruthenium (Ru) and a metal element.Type: ApplicationFiled: March 9, 2018Publication date: March 14, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Tadaaki OIKAWA, Young Min EEH, Kazuya SAWADA, Kenichi YOSHINO, Toshihiko NAGASE, Daisuke WATANABE
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Patent number: 10203380Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer between the free layer and the pinned layer, wherein the free layer may include a first magnetic layer; a second magnetic layer having a smaller perpendicular magnetic anisotropy energy density than the first magnetic layer; and a spacer interposed between the first magnetic layer and the second magnetic layer.Type: GrantFiled: December 14, 2017Date of Patent: February 12, 2019Assignees: SK Hynix Inc., Toshiba Memory CorporationInventors: Ku-Youl Jung, Guk-Cheon Kim, Toshihiko Nagase, Daisuke Watanabe, Won-Joon Choi, Youngmin Eeh, Kazuya Sawada
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Patent number: 10199568Abstract: According to one embodiment, a magnetic storage device includes a substrate, a dummy contact disposed on a top surface of the substrate, extending linearly in a direction substantially perpendicular to the top surface of the substrate, and floating electrically, and a magnetoresistive effect element included in a layer and insulated from the dummy contact, wherein the layer is disposed on the top surface of the dummy contact.Type: GrantFiled: September 9, 2016Date of Patent: February 5, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Makoto Nagamine, Young Min Eeh, Daisuke Watanabe, Kazuya Sawada, Toshihiko Nagase
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Publication number: 20190019841Abstract: A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.Type: ApplicationFiled: September 9, 2018Publication date: January 17, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Youngmin EEH, Toshihiko NAGASE, Daisuke WATANABE, Kazuya SAWADA, Kenichi YOSHINO, Tadaaki OIKAWA, Hiroyuki OHTORI
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Patent number: 10170519Abstract: According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.Type: GrantFiled: September 9, 2016Date of Patent: January 1, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Youngmin Eeh, Toshihiko Nagase, Daisuke Watanabe, Koji Ueda, Makoto Nagamine, Kazuya Sawada
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Patent number: 10170691Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.Type: GrantFiled: June 20, 2016Date of Patent: January 1, 2019Assignees: SK Hynix Inc., TOSHIBA MEMORY CORPORATIONInventors: Jong-Koo Lim, Won-Joon Choi, Guk-Cheon Kim, Yang-Kon Kim, Ku-Youl Jung, Toshihiko Nagase, Youngmin Eeh, Daisuke Watanabe, Kazuya Sawada, Makoto Nagamine
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Patent number: 10153423Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.Type: GrantFiled: December 15, 2017Date of Patent: December 11, 2018Assignees: SK Hynix Inc., Toshiba Memory CorporationInventors: Yang-Kon Kim, Guk-Cheon Kim, Jae-Hyoung Lee, Jong-Koo Lim, Ku-Youl Jung, Toshihiko Nagase, Youngmin Eeh
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Patent number: 10103318Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.Type: GrantFiled: September 12, 2016Date of Patent: October 16, 2018Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX, INC.Inventors: Daisuke Watanabe, Yang Kon Kim, Makoto Nagamine, Youngmin Eeh, Koji Ueda, Toshihiko Nagase, Kazuya Sawada, Guk Cheon Kim, Bo Mi Lee, Won Joon Choi
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Publication number: 20180284199Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer between the free layer and the pinned layer, wherein the free layer may include a first magnetic layer; a second magnetic layer having a smaller perpendicular magnetic anisotropy energy density than the first magnetic layer; and a spacer interposed between the first magnetic layer and the second magnetic layer.Type: ApplicationFiled: December 14, 2017Publication date: October 4, 2018Inventors: Ku-Youl JUNG, Guk-Cheon KIM, Toshihiko NAGASE, Daisuke WATANABE, Won-Joon CHOI, Youngmin EEH, Kazuya SAWADA
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Patent number: 10090459Abstract: A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.Type: GrantFiled: January 3, 2017Date of Patent: October 2, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Daisuke Watanabe, Youngmin Eeh, Kazuya Sawada, Koji Ueda, Toshihiko Nagase
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Publication number: 20180277745Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.Type: ApplicationFiled: September 12, 2017Publication date: September 27, 2018Applicants: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.Inventors: Tadaaki OIKAWA, Toshihiko NAGASE, Youngmin EEH, Daisuke WATANABE, Kazuya SAWADA, Kenichi YOSHINO, Hiroyuki OHTORI, Yang Kon KIM, Ku Youl JUNG, Jong Koo LIM, Jae Hyoung LEE, Soo Man SEO, Sung Woong CHUNG, Tae Young LEE
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Publication number: 20180269043Abstract: According to one embodiment, a film formation method using a magnetron sputtering apparatus including first and second magnets provided on first and second target holders, includes forming an insulating film on a wafer placed on a main surface of a wafer stage by sputtering first and second insulating targets set on the first and second target holders, wherein the wafer includes an effective area to be used for a product and an ineffective area outside the effective area, and when viewed from a direction perpendicular to the main surface of the wafer stage, at least a part of the first magnet overlaps the effective area of the wafer placed on the main surface of the wafer stage, and the entire second magnet does not overlap the effective area of the wafer placed on the main surface of the wafer stage.Type: ApplicationFiled: September 14, 2017Publication date: September 20, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Koji UEDA, Koji YAMAKAWA, Toshihiko NAGASE, Youngmin EEH, Kazuya SAWADA
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Publication number: 20180205006Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction; a second magnetic layer, a magnetization direction of the second magnetic layer being invariable; a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer having a stacked layer structure in which amorphous magnetic material layer is sandwiched between crystalline magnetic material layers.Type: ApplicationFiled: March 12, 2018Publication date: July 19, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Daisuke WATANABE, Toshihiko NAGASE, Youngmin EEH, Kazuya SAWADA, Makoto NAGAMINE, Tadaaki OIKAWA, Kenichi YOSHINO, Hiroyuki OHTORI
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Patent number: 10026891Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.Type: GrantFiled: June 30, 2016Date of Patent: July 17, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Toshihiko Nagase, Tadashi Kai, Youngmin Eeh, Koji Ueda, Daisuke Watanabe, Kazuya Sawada, Hiroaki Yoda
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Publication number: 20180198060Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.Type: ApplicationFiled: December 15, 2017Publication date: July 12, 2018Inventors: Yang-Kon KIM, Guk-Cheon KIM, Jae-Hyoung LEE, Jong-Koo LIM, Ku-Youl JUNG, Toshihiko NAGASE, Youngmin EEH
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Patent number: 9991313Abstract: According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure.Type: GrantFiled: March 12, 2015Date of Patent: June 5, 2018Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX, INC.Inventors: Daisuke Watanabe, Makoto Nagamine, Youngmin Eeh, Koji Ueda, Toshihiko Nagase, Kazuya Sawada, Yang Kon Kim, Bo Mi Lee, Guk Cheon Kim, Won Joon Choi, Ki Seon Park
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Patent number: 9947859Abstract: An electronic device that includes a first structure including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer which is interposed between the first magnetic layer and the second magnetic layer; and a second structure disposed over the first structure, and including a magnetic correction layer for correcting a magnetic field of the first structure, wherein a width of a bottom surface of the second structure is larger than a width of a top surface of the first structure.Type: GrantFiled: December 3, 2014Date of Patent: April 17, 2018Assignees: SK Hynix Inc., TOSHIBA MEMORY CORPORATIONInventors: Cha-Deok Dong, Daisuke Watanabe, Kazuya Sawada, Young-Min Eeh, Koji Ueda, Toshihiko Nagase
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Patent number: 9947862Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer in which a magnetization direction is variable, a first nonmagnetic layer provided on the first magnetic layer, a second magnetic layer provided on the first nonmagnetic layer, a magnetization direction of the second magnetic layer being invariable, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer includes Mo.Type: GrantFiled: September 16, 2016Date of Patent: April 17, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Daisuke Watanabe, Toshihiko Nagase, Youngmin Eeh, Kazuya Sawada, Makoto Nagamine, Tadaaki Oikawa, Kenichi Yoshino, Hiroyuki Ohtori
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Publication number: 20180076383Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.Type: ApplicationFiled: March 20, 2017Publication date: March 15, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Kazuya SAWADA, Toshihiko NAGASE, Youngmin EEH, Daisuke WATANABE, Kenichi YOSHINO, Tadaaki OIKAWA, Hiroyuki OHTORI