Abstract: According to one embodiment, a semiconductor device includes a first rare earth oxide layer, a first magnetic layer being adjacent to the first rare earth oxide layer, and a nonmagnetic layer, the first magnetic layer being disposed between the first rare earth oxide layer and the nonmagnetic layer and being oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer.

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.

Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer in which a magnetization direction is variable, a first nonmagnetic layer provided on the first magnetic layer, a second magnetic layer provided on the first nonmagnetic layer, a magnetization direction of the second magnetic layer being invariable, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer includes Mo.

Abstract: According to one embodiment, a magnetic storage device includes a substrate, a dummy contact disposed on a top surface of the substrate, extending linearly in a direction substantially perpendicular to the top surface of the substrate, and floating electrically, and a magnetoresistive effect element included in a layer and insulated from the dummy contact, wherein the layer is disposed on the top surface of the dummy contact.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Abstract: According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.

Abstract: According to one embodiment, a magnetoresistive memory device includes an electrode, a first layer which is provided on the electrode and includes an amorphous portion in at least a part of an electrode side, and a magnetoresisive element provided on the first layer.

Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.

Abstract: Provided are electronic device including a variable resistance element and a method for fabricating an electronic device including a variable resistance element. The electronic device including a variable resistance element includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include cooling the substrate, before forming the magnetic correction layer such that the magnetic correction layer is formed over the cooled substrate.

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.

Abstract: According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.

Abstract: A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Abstract: An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.

Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on a side of the first or second magnetic layer opposite to the nonmagnetic layer. The third magnetic layer has a multilayer film having an artificial lattice structure, and the third magnetic layer is partly microcrystalline or amorphous.

Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on a side of the first or second magnetic layer opposite to the nonmagnetic layer. The third magnetic layer has a multilayer film having an artificial lattice structure, and the third magnetic layer is partly microcrystalline or amorphous.

Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.