Patents by Inventor Toshihiko Ouchi

Toshihiko Ouchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9958330
    Abstract: A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: May 1, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasushi Koyama, Toshihiko Ouchi
  • Patent number: 9961280
    Abstract: Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixel 101 having an electromagnetic wave detecting element 111 configured to detect an electromagnetic wave; a switch 110 configured to read out a signal from the pixel; a signal generating unit 102 configured to generate a signal 114 having a predetermined period, wherein the pixel is connected to a transmission line 103 for supplying, to the pixel, the signal having the predetermined period, and to a scanning line 106 and 107 for reading out the signal from the pixel through the switch, and the pixel has a frequency converting element 113 configured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: May 1, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Ryota Sekiguchi, Toshihiko Ouchi
  • Patent number: 9786806
    Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: October 10, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Ryota Sekiguchi, Toshihiko Ouchi
  • Patent number: 9722126
    Abstract: A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e2 times the electric field intensity of the terahertz wave at the interface.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: August 1, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takayuki Koizumi, Toshihiko Ouchi
  • Publication number: 20170059963
    Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.
    Type: Application
    Filed: November 16, 2016
    Publication date: March 2, 2017
    Inventor: Toshihiko Ouchi
  • Publication number: 20170062644
    Abstract: A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e2 times the electric field intensity of the terahertz wave at the interface.
    Type: Application
    Filed: August 4, 2016
    Publication date: March 2, 2017
    Inventors: Takayuki Koizumi, Toshihiko Ouchi
  • Publication number: 20160377958
    Abstract: The present invention relates to a terahertz wave generating apparatus including a terahertz wave generating element including a nonlinear optical crystal that generates a terahertz wave in response to light incident on the nonlinear optical crystal, a coupling member to extract the terahertz wave generated from the nonlinear optical crystal, a photodetector to detect light emitted from the nonlinear optical crystal, and an adjusting unit to adjust the light incident on the nonlinear optical crystal based on a result of detection by the photodetector.
    Type: Application
    Filed: July 10, 2014
    Publication date: December 29, 2016
    Inventor: Toshihiko Ouchi
  • Publication number: 20160351744
    Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.
    Type: Application
    Filed: December 22, 2014
    Publication date: December 1, 2016
    Applicants: CANON KABUSHIKI KAISHA, CANON KABUSHIKI KAISHA
    Inventors: Ryota Sekiguchi, Toshihiko Ouchi
  • Publication number: 20160169746
    Abstract: A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.
    Type: Application
    Filed: November 20, 2015
    Publication date: June 16, 2016
    Inventors: Yasushi Koyama, Toshihiko Ouchi
  • Patent number: 9304373
    Abstract: A terahertz wave generation element is provided, which includes: an optical waveguide including a core of electro-optic crystal; an optical coupler for extracting a terahertz wave generated from the optical waveguide when light propagates in the optical waveguide to a space; and a reflecting layer disposed on the opposite side to the optical coupler with respect to the core of the optical waveguide, so as to reflect the generated terahertz wave. According to the element, it is possible to provide a generation element that can generate a relatively high intensity terahertz wave efficiently by photoexcitation or generate a terahertz wave having a relatively narrow pulse width, so as to flexibly control waveform shaping of the generated terahertz wave.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: April 5, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshihiko Ouchi
  • Publication number: 20160094183
    Abstract: The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.
    Type: Application
    Filed: December 9, 2015
    Publication date: March 31, 2016
    Inventors: Toshihiko Ouchi, Ryota Sekiguchi
  • Patent number: 9281433
    Abstract: A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: March 8, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Toshihiko Ouchi
  • Patent number: 9236833
    Abstract: The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: January 12, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshihiko Ouchi, Ryota Sekiguchi
  • Publication number: 20150365611
    Abstract: Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixel 101 having an electromagnetic wave detecting element 111 configured to detect an electromagnetic wave; a switch 110 configured to read out a signal from the pixel; a signal generating unit 102 configured to generate a signal 114 having a predetermined period, wherein the pixel is connected to a transmission line 103 for supplying, to the pixel, the signal having the predetermined period, and to a scanning line 106 and 107 for reading out the signal from the pixel through the switch, and the pixel has a frequency converting element 113 configured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.
    Type: Application
    Filed: February 25, 2014
    Publication date: December 17, 2015
    Applicant: Canon Kabushiki Kaisha
    Inventors: Ryota Sekiguchi, Toshihiko Ouchi
  • Publication number: 20150355085
    Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.
    Type: Application
    Filed: August 19, 2015
    Publication date: December 10, 2015
    Inventor: Toshihiko Ouchi
  • Patent number: 9152009
    Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: October 6, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Toshihiko Ouchi
  • Publication number: 20150241348
    Abstract: To acquire information of a test body by irradiating the test body with a terahertz wave, an information acquiring apparatus includes a photoconductive device, a terahertz wave irradiating unit, a terahertz wave irradiating unit, a detecting unit, and a light irradiating unit. The photoconductive device generates the terahertz wave by light incident from a light source. The terahertz wave irradiating unit separates the terahertz wave generated by the photoconductive device and light transmitting through, or reflecting from, the photoconductive device, and irradiates the test body with the separated terahertz wave. The detecting unit detects the terahertz wave from the test body. The light irradiating unit irradiates the detection unit with the light separated by the terahertz wave irradiating unit.
    Type: Application
    Filed: February 24, 2015
    Publication date: August 27, 2015
    Inventor: Toshihiko Ouchi
  • Patent number: 9104912
    Abstract: The present invention provides an apparatus and a method for transforming a time waveform of an electromagnetic wave into a time waveform suited for signal processing and the like so as to measure the time waveform. A wavelet transform is performed on a first time waveform of an electromagnetic wave, such as a terahertz wave, measured in advance, and a second time waveform suited for signal processing and having a high correlation with a mother wavelet used in the wavelet transform is formed by controlling a wavelet expansion coefficient. In a second measurement process and onward of a target object, a transforming unit, such as a bias voltage controller, is used to transform the electromagnetic wave into a transformed time waveform so as to measure the time waveform.
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: August 11, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Michinori Shioda, Toshihiko Ouchi
  • Publication number: 20150212388
    Abstract: A terahertz wave generation element is provided, which includes: an optical waveguide including a core of electro-optic crystal; an optical coupler for extracting a terahertz wave generated from the optical waveguide when light propagates in the optical waveguide to a space; and a reflecting layer disposed on the opposite side to the optical coupler with respect to the core of the optical waveguide, so as to reflect the generated terahertz wave. According to the element, it is possible to provide a generation element that can generate a relatively high intensity terahertz wave efficiently by photoexcitation or generate a terahertz wave having a relatively narrow pulse width, so as to flexibly control waveform shaping of the generated terahertz wave.
    Type: Application
    Filed: April 7, 2015
    Publication date: July 30, 2015
    Inventor: Toshihiko Ouchi
  • Patent number: 9091869
    Abstract: A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: July 28, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshihiko Ouchi