Patents by Inventor Toshihiko Uno

Toshihiko Uno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9525784
    Abstract: There are provided an image processing system, an information processing apparatus, display method and a computer-readable, non-transitory medium that can enhance user convenience when selecting an image reading apparatus. The image processing system has a plurality of image reading apparatuses and an information processing apparatus.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: December 20, 2016
    Assignee: PFU Limited
    Inventor: Toshihiko Uno
  • Publication number: 20130278965
    Abstract: There are provided an image processing system, an information processing apparatus, display method and a computer-readable, non-transitory medium that can enhance user convenience when selecting an image reading apparatus. The image processing system has a plurality of image reading apparatuses and an information processing apparatus.
    Type: Application
    Filed: February 5, 2013
    Publication date: October 24, 2013
    Applicant: PFU LIMITED
    Inventor: Toshihiko Uno
  • Patent number: 7759696
    Abstract: A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: July 20, 2010
    Assignee: Panasonic Corporation
    Inventors: Saichirou Kaneko, Tetsuji Yamashita, Toshihiko Uno
  • Patent number: 7301179
    Abstract: An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region 100, 102 is filled with the sealing resin to put the sealing resin into direct contact with the source electrode 70 and the drain electrode 80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film 90 in a high temperature and high humidity atmosphere are discharged to the source electrode 70 and the drain electrode 80 via the ion-through region 100, 102 and thus do not influence an N?-type extended drain region 30. Therefore, the drain breakdown voltage can be improved.
    Type: Grant
    Filed: August 16, 2005
    Date of Patent: November 27, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Saichirou Kaneko, Kazuyuki Sawada, Toshihiko Uno
  • Publication number: 20070090482
    Abstract: A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.
    Type: Application
    Filed: October 18, 2006
    Publication date: April 26, 2007
    Inventors: Saichirou Kaneko, Tetsuji Yamashita, Toshihiko Uno
  • Patent number: 7170134
    Abstract: P-type buried regions 104a and 104b are formed in an extended drain region 102 formed in a P-type semiconductor substrate 110. An N-type buried region 113 is formed between the P-type buried regions 104a and 104b. An N-type impurity concentration of the N-type buried region 113 along a G–G? plane is low in the vicinity of boundaries between the N-type buried region 113 and the P-type buried regions 104a and 104b and is increased from the boundaries to an inside of the N-type buried region 113.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: January 30, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuhiro Takehana, Toshihiko Uno
  • Publication number: 20060055064
    Abstract: An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region 100, 102 is filled with the sealing resin to put the sealing resin into direct contact with the source electrode 70 and the drain electrode 80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film 90 in a high temperature and high humidity atmosphere are discharged to the source electrode 70 and the drain electrode 80 via the ion-through region 100, 102 and thus do not influence an N?-type extended drain region 30. Therefore, the drain breakdown voltage can be improved.
    Type: Application
    Filed: August 16, 2005
    Publication date: March 16, 2006
    Inventors: Saichirou Kaneko, Kazuyuki Sawada, Toshihiko Uno
  • Patent number: 7008865
    Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 ?m from the substrate surface is about 1×1015/cm3 or more and is about 30% or more of that at a depth of about 2 ?m from the substrate surface.
    Type: Grant
    Filed: February 24, 2004
    Date of Patent: March 7, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Toshihiko Uno
  • Publication number: 20050127450
    Abstract: P-type buried regions 104a and 104b are formed in an extended drain region 102 formed in a P-type semiconductor substrate 110. An N-type buried region 113 is formed between the P-type buried regions 104a and 104b. An N-type impurity concentration of the N-type buried region 113 along a G-G? plane is low in the vicinity of boundaries between the N-type buried region 113 and the P-type buried regions 104a and 104b and is increased from the boundaries to an inside of the N-type buried region 113.
    Type: Application
    Filed: November 23, 2004
    Publication date: June 16, 2005
    Inventors: Yasuhiro Takehana, Toshihiko Uno
  • Publication number: 20040164376
    Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 &mgr;m from the substrate surface is about 1×1015/cm3 or more and is about 30% or more of that at a depth of about 2 &mgr;m from the substrate surface.
    Type: Application
    Filed: February 24, 2004
    Publication date: August 26, 2004
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventor: Toshihiko Uno
  • Publication number: 20040085511
    Abstract: An intraocular lens which is placed between an iris and a crystalline lens, includes: an optical part which has a predetermined refractive power, the optical part being larger in diameter than a diameter of a pupil and including a fine pore formed through the optical part and arranged within a region centering an optical center of the optical part corresponding to a pupil area; and a support part which holds the optical part in an eye.
    Type: Application
    Filed: October 27, 2003
    Publication date: May 6, 2004
    Applicant: NIDEK CO., LTD
    Inventors: Toshihiko Uno, Yuichi Ohashi
  • Publication number: 20030102507
    Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 &mgr;m from the substrate surface is about 1×1015/cm3 or more and is about 30% or more of that at a depth of about 2 &mgr;m from the substrate surface.
    Type: Application
    Filed: December 2, 2002
    Publication date: June 5, 2003
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventor: Toshihiko Uno
  • Patent number: 6343262
    Abstract: A method for providing twenty-four hour maintenance of a measuring instrument by outputting the data from the measuring instrument to a measuring computer, and if maintenance is needed, transmitting the data to a maintenance computer at one of a plurality of servicing centers, judging whether or not that servicing center is capable of performing the maintenance, and if it is not capable of performing the maintenance, selecting another servicing center that is capable of performing the maintenance and transmitting the measuring instrument's data to one of the maintenance computers at that servicing center, which will then perform the maintenance to the measuring instrument.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: January 29, 2002
    Assignee: Horiba, Ltd.
    Inventors: Toshihiko Uno, Masatomo Ishikura
  • Patent number: 6294133
    Abstract: A detector assembly for detecting a plurality of different properties at the same location at the same time is provided by integrating onto a single semiconductor substrate a first detector unit for measuring a first property and a second detector unit for measuring a second property. The first and second detector units can share, for example, a common element, such as a sensor device that can provide electrical output signals representative of, respectively, the first property and the second property. The common element can include a diaphragm with a pyroelectric element to provide a measurement of temperature and pressure.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: September 25, 2001
    Assignee: Horiba, Ltd.
    Inventors: Kazuaki Sawada, Katsuhiko Tomita, Tsuyoshi Nakanishi, Hiroki Tanabe, Susumu Mimura, Toshihiko Uno
  • Patent number: 5810928
    Abstract: A method of measuring gas component Concentrations of special material gases for semiconductor, and a semiconductor equipment are provided. The method and apparatus can be incorporated in a gas pipe line system in an inline manner, and measure the component and concentration of a gas flowing through a gas pipe line or a gas with which the gas pipe line system is filled, thereby eliminating any erroneous connection. In the method of measuring gas component concentrations of special material gases for semiconductor, as means for attaining the objects, an infrared gas detector is disposed in a gas pipe line between a gas cylinder containing a special material gas for semiconductor and a semiconductor producing section, so that the gas component and concentration are measured in an inline manner. An apparatus for supplying special material gases for semiconductor is also provided.
    Type: Grant
    Filed: November 16, 1995
    Date of Patent: September 22, 1998
    Assignees: Mitsubishi Corporation, Horiba Co. Ltd., Stec, Inc.
    Inventors: Hiroyuki Harada, Toshihiko Uno, Shigeyuki Akiyama, Tetuo Shimizu
  • Patent number: 5693945
    Abstract: An ultraviolet light source is provided on one end of a cell into which a sample gas is introduced. A beam splitter for dividing beams which have been transmitted through the cell into two optical paths is provided on the other end of the cell. A first detector is provided in one optical path, and a second detector is provided in the other optical path. A gas filter filled with a component to be measured is positioned between the detectors and beam splitter so that a concentration of the component to be measured may be obtained on the basis of a difference between the output of the first detector and the product of the output of the second detector and an appointed constant. Influences resulting from components coexisting in the sample gas are reduced. Alternatively, an infrared light source may be provided on one end of a sample cell. A gas filter filled with a gas the same as the gas to be measured is provided at the other end of the sample cell.
    Type: Grant
    Filed: July 28, 1995
    Date of Patent: December 2, 1997
    Assignee: Horiba Ltd.
    Inventors: Shigeyuki Akiyama, Masahiko Fujiwara, Fujio Koga, Naohito Shimizu, Toshihiko Uno, Aritoshi Yoneda
  • Patent number: 5673767
    Abstract: A low profile cab-front-engine truck is converted by utilizing a normal chassis frame and a normal cab designed for a cab-over-engine truck in which an engine is arranged adjacent to a front axle and in which the cab is arranged over the engine. The cab is shifted to a front lower position in front of the engine. The low profile truck includes a frame extension provided on the forward end portion of the chassis frame, a front mount provided on the frame extension, and a rear mount provided on the frame extension or the chassis frame. The cab is supported at the front lower position by the front and rear mounts.
    Type: Grant
    Filed: November 28, 1995
    Date of Patent: October 7, 1997
    Assignee: Toyota Auto Body Co., Ltd.
    Inventors: Toshihiko Uno, Yuji Aoyagi, Masamitsu Iwatani, Tadashi Takenoshita
  • Patent number: 4817413
    Abstract: A method of using an opto-acoustic apparatus for measuring, in an environment containing extraneous noise, the concentration of a gas in a mixture of gases or of particulates in a gas.
    Type: Grant
    Filed: March 11, 1986
    Date of Patent: April 4, 1989
    Assignee: Horiba, Ltd.
    Inventors: Ichiro Asano, Toshihiko Uno
  • Patent number: 4669562
    Abstract: A power take-off apparatus in an automotive vehicle equipped with an automatic power transmission including a rotary element arranged to be driven by a prime mover of the vehicle when the transmission is conditioned in a neutral position during stopping of the vehicle and to be arrested when the power transmission is conditioned in a forward position. The power take-off apparatus comprises a drive gear mounted on the rotary element for rotation therewith, a driven gear arranged to be meshed with the drive gear, an electrically operated shift mechanism including an electric motor, and a linkage connected to the motor to move the driven gear toward and away from the drive gear in response to energization of the motor, and an electric control circuit for effecting energization of the motor when the transmission is maintained in the forward position during stopping of the vehicle and for maintaining the motor in its deenergized condition when the transmission is shifted to the neutral position.
    Type: Grant
    Filed: August 29, 1985
    Date of Patent: June 2, 1987
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Yutaka Taga, Kunio Morisawa, Toshihiko Uno, Masami Ito, Takashi Haneda
  • Patent number: 4500868
    Abstract: An automotive driving instruction system which comprises a plurality of sensors including a vehicle speed sensor etc. mounted at various parts of the automobile, a computer for reading the outputs of the sensors for calculating the driving conditions of the automobile, and a replaceable external memory unit. The computer calculates a plurality of values representing the driving conditions of the automobile on the basis of the outputs of the sensors, and controls to generate an alarm when any of the values thus calculated becomes to corresponding one of a plurality of predetermined values. Also, the accumulated value of the alarms and the respective accumulated values of the alarms for each of causes of alarming are stored in the external memory unit. At the end of a driving, the external memory unit is demounted, so that any habits of the driver is determined from the data stored in the external memory unit to contribute to the correction thereof.
    Type: Grant
    Filed: November 24, 1981
    Date of Patent: February 19, 1985
    Assignees: Nippondenso Co., Ltd., Toyota Jidosha Kogyo Kabushiki Kaisha
    Inventors: Naoki Tokitsu, Toshitaka Fujiwara, Toranosuke Kato, Toshihiko Uno