Patents by Inventor Toshihiko Uno
Toshihiko Uno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9525784Abstract: There are provided an image processing system, an information processing apparatus, display method and a computer-readable, non-transitory medium that can enhance user convenience when selecting an image reading apparatus. The image processing system has a plurality of image reading apparatuses and an information processing apparatus.Type: GrantFiled: February 5, 2013Date of Patent: December 20, 2016Assignee: PFU LimitedInventor: Toshihiko Uno
-
Publication number: 20130278965Abstract: There are provided an image processing system, an information processing apparatus, display method and a computer-readable, non-transitory medium that can enhance user convenience when selecting an image reading apparatus. The image processing system has a plurality of image reading apparatuses and an information processing apparatus.Type: ApplicationFiled: February 5, 2013Publication date: October 24, 2013Applicant: PFU LIMITEDInventor: Toshihiko Uno
-
Patent number: 7759696Abstract: A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.Type: GrantFiled: October 18, 2006Date of Patent: July 20, 2010Assignee: Panasonic CorporationInventors: Saichirou Kaneko, Tetsuji Yamashita, Toshihiko Uno
-
Patent number: 7301179Abstract: An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region 100, 102 is filled with the sealing resin to put the sealing resin into direct contact with the source electrode 70 and the drain electrode 80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film 90 in a high temperature and high humidity atmosphere are discharged to the source electrode 70 and the drain electrode 80 via the ion-through region 100, 102 and thus do not influence an N?-type extended drain region 30. Therefore, the drain breakdown voltage can be improved.Type: GrantFiled: August 16, 2005Date of Patent: November 27, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Saichirou Kaneko, Kazuyuki Sawada, Toshihiko Uno
-
Publication number: 20070090482Abstract: A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.Type: ApplicationFiled: October 18, 2006Publication date: April 26, 2007Inventors: Saichirou Kaneko, Tetsuji Yamashita, Toshihiko Uno
-
Patent number: 7170134Abstract: P-type buried regions 104a and 104b are formed in an extended drain region 102 formed in a P-type semiconductor substrate 110. An N-type buried region 113 is formed between the P-type buried regions 104a and 104b. An N-type impurity concentration of the N-type buried region 113 along a G–G? plane is low in the vicinity of boundaries between the N-type buried region 113 and the P-type buried regions 104a and 104b and is increased from the boundaries to an inside of the N-type buried region 113.Type: GrantFiled: November 23, 2004Date of Patent: January 30, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yasuhiro Takehana, Toshihiko Uno
-
Publication number: 20060055064Abstract: An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80. The passivation film 90 is coated with a sealing resin to package the semiconductor device. At this point, the ion-through region 100, 102 is filled with the sealing resin to put the sealing resin into direct contact with the source electrode 70 and the drain electrode 80. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation film 90 in a high temperature and high humidity atmosphere are discharged to the source electrode 70 and the drain electrode 80 via the ion-through region 100, 102 and thus do not influence an N?-type extended drain region 30. Therefore, the drain breakdown voltage can be improved.Type: ApplicationFiled: August 16, 2005Publication date: March 16, 2006Inventors: Saichirou Kaneko, Kazuyuki Sawada, Toshihiko Uno
-
Method of manufacturing a semiconductor device having a high breakdown voltage and low on-resistance
Patent number: 7008865Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 ?m from the substrate surface is about 1×1015/cm3 or more and is about 30% or more of that at a depth of about 2 ?m from the substrate surface.Type: GrantFiled: February 24, 2004Date of Patent: March 7, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Toshihiko Uno -
Publication number: 20050127450Abstract: P-type buried regions 104a and 104b are formed in an extended drain region 102 formed in a P-type semiconductor substrate 110. An N-type buried region 113 is formed between the P-type buried regions 104a and 104b. An N-type impurity concentration of the N-type buried region 113 along a G-G? plane is low in the vicinity of boundaries between the N-type buried region 113 and the P-type buried regions 104a and 104b and is increased from the boundaries to an inside of the N-type buried region 113.Type: ApplicationFiled: November 23, 2004Publication date: June 16, 2005Inventors: Yasuhiro Takehana, Toshihiko Uno
-
Publication number: 20040164376Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 &mgr;m from the substrate surface is about 1×1015/cm3 or more and is about 30% or more of that at a depth of about 2 &mgr;m from the substrate surface.Type: ApplicationFiled: February 24, 2004Publication date: August 26, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventor: Toshihiko Uno
-
Publication number: 20040085511Abstract: An intraocular lens which is placed between an iris and a crystalline lens, includes: an optical part which has a predetermined refractive power, the optical part being larger in diameter than a diameter of a pupil and including a fine pore formed through the optical part and arranged within a region centering an optical center of the optical part corresponding to a pupil area; and a support part which holds the optical part in an eye.Type: ApplicationFiled: October 27, 2003Publication date: May 6, 2004Applicant: NIDEK CO., LTDInventors: Toshihiko Uno, Yuichi Ohashi
-
Publication number: 20030102507Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 &mgr;m from the substrate surface is about 1×1015/cm3 or more and is about 30% or more of that at a depth of about 2 &mgr;m from the substrate surface.Type: ApplicationFiled: December 2, 2002Publication date: June 5, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Toshihiko Uno
-
Patent number: 6343262Abstract: A method for providing twenty-four hour maintenance of a measuring instrument by outputting the data from the measuring instrument to a measuring computer, and if maintenance is needed, transmitting the data to a maintenance computer at one of a plurality of servicing centers, judging whether or not that servicing center is capable of performing the maintenance, and if it is not capable of performing the maintenance, selecting another servicing center that is capable of performing the maintenance and transmitting the measuring instrument's data to one of the maintenance computers at that servicing center, which will then perform the maintenance to the measuring instrument.Type: GrantFiled: December 14, 1998Date of Patent: January 29, 2002Assignee: Horiba, Ltd.Inventors: Toshihiko Uno, Masatomo Ishikura
-
Patent number: 6294133Abstract: A detector assembly for detecting a plurality of different properties at the same location at the same time is provided by integrating onto a single semiconductor substrate a first detector unit for measuring a first property and a second detector unit for measuring a second property. The first and second detector units can share, for example, a common element, such as a sensor device that can provide electrical output signals representative of, respectively, the first property and the second property. The common element can include a diaphragm with a pyroelectric element to provide a measurement of temperature and pressure.Type: GrantFiled: January 12, 1999Date of Patent: September 25, 2001Assignee: Horiba, Ltd.Inventors: Kazuaki Sawada, Katsuhiko Tomita, Tsuyoshi Nakanishi, Hiroki Tanabe, Susumu Mimura, Toshihiko Uno
-
Patent number: 5810928Abstract: A method of measuring gas component Concentrations of special material gases for semiconductor, and a semiconductor equipment are provided. The method and apparatus can be incorporated in a gas pipe line system in an inline manner, and measure the component and concentration of a gas flowing through a gas pipe line or a gas with which the gas pipe line system is filled, thereby eliminating any erroneous connection. In the method of measuring gas component concentrations of special material gases for semiconductor, as means for attaining the objects, an infrared gas detector is disposed in a gas pipe line between a gas cylinder containing a special material gas for semiconductor and a semiconductor producing section, so that the gas component and concentration are measured in an inline manner. An apparatus for supplying special material gases for semiconductor is also provided.Type: GrantFiled: November 16, 1995Date of Patent: September 22, 1998Assignees: Mitsubishi Corporation, Horiba Co. Ltd., Stec, Inc.Inventors: Hiroyuki Harada, Toshihiko Uno, Shigeyuki Akiyama, Tetuo Shimizu
-
Patent number: 5693945Abstract: An ultraviolet light source is provided on one end of a cell into which a sample gas is introduced. A beam splitter for dividing beams which have been transmitted through the cell into two optical paths is provided on the other end of the cell. A first detector is provided in one optical path, and a second detector is provided in the other optical path. A gas filter filled with a component to be measured is positioned between the detectors and beam splitter so that a concentration of the component to be measured may be obtained on the basis of a difference between the output of the first detector and the product of the output of the second detector and an appointed constant. Influences resulting from components coexisting in the sample gas are reduced. Alternatively, an infrared light source may be provided on one end of a sample cell. A gas filter filled with a gas the same as the gas to be measured is provided at the other end of the sample cell.Type: GrantFiled: July 28, 1995Date of Patent: December 2, 1997Assignee: Horiba Ltd.Inventors: Shigeyuki Akiyama, Masahiko Fujiwara, Fujio Koga, Naohito Shimizu, Toshihiko Uno, Aritoshi Yoneda
-
Patent number: 5673767Abstract: A low profile cab-front-engine truck is converted by utilizing a normal chassis frame and a normal cab designed for a cab-over-engine truck in which an engine is arranged adjacent to a front axle and in which the cab is arranged over the engine. The cab is shifted to a front lower position in front of the engine. The low profile truck includes a frame extension provided on the forward end portion of the chassis frame, a front mount provided on the frame extension, and a rear mount provided on the frame extension or the chassis frame. The cab is supported at the front lower position by the front and rear mounts.Type: GrantFiled: November 28, 1995Date of Patent: October 7, 1997Assignee: Toyota Auto Body Co., Ltd.Inventors: Toshihiko Uno, Yuji Aoyagi, Masamitsu Iwatani, Tadashi Takenoshita
-
Patent number: 4817413Abstract: A method of using an opto-acoustic apparatus for measuring, in an environment containing extraneous noise, the concentration of a gas in a mixture of gases or of particulates in a gas.Type: GrantFiled: March 11, 1986Date of Patent: April 4, 1989Assignee: Horiba, Ltd.Inventors: Ichiro Asano, Toshihiko Uno
-
Patent number: 4669562Abstract: A power take-off apparatus in an automotive vehicle equipped with an automatic power transmission including a rotary element arranged to be driven by a prime mover of the vehicle when the transmission is conditioned in a neutral position during stopping of the vehicle and to be arrested when the power transmission is conditioned in a forward position. The power take-off apparatus comprises a drive gear mounted on the rotary element for rotation therewith, a driven gear arranged to be meshed with the drive gear, an electrically operated shift mechanism including an electric motor, and a linkage connected to the motor to move the driven gear toward and away from the drive gear in response to energization of the motor, and an electric control circuit for effecting energization of the motor when the transmission is maintained in the forward position during stopping of the vehicle and for maintaining the motor in its deenergized condition when the transmission is shifted to the neutral position.Type: GrantFiled: August 29, 1985Date of Patent: June 2, 1987Assignee: Toyota Jidosha Kabushiki KaishaInventors: Yutaka Taga, Kunio Morisawa, Toshihiko Uno, Masami Ito, Takashi Haneda
-
Patent number: 4500868Abstract: An automotive driving instruction system which comprises a plurality of sensors including a vehicle speed sensor etc. mounted at various parts of the automobile, a computer for reading the outputs of the sensors for calculating the driving conditions of the automobile, and a replaceable external memory unit. The computer calculates a plurality of values representing the driving conditions of the automobile on the basis of the outputs of the sensors, and controls to generate an alarm when any of the values thus calculated becomes to corresponding one of a plurality of predetermined values. Also, the accumulated value of the alarms and the respective accumulated values of the alarms for each of causes of alarming are stored in the external memory unit. At the end of a driving, the external memory unit is demounted, so that any habits of the driver is determined from the data stored in the external memory unit to contribute to the correction thereof.Type: GrantFiled: November 24, 1981Date of Patent: February 19, 1985Assignees: Nippondenso Co., Ltd., Toyota Jidosha Kogyo Kabushiki KaishaInventors: Naoki Tokitsu, Toshitaka Fujiwara, Toranosuke Kato, Toshihiko Uno