Abstract: An electro-optical modulator includes a substrate 201; an optical waveguide formed of a silicon-containing i-type amorphous semiconductor 204 on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 area crystalline semiconductor layer.

Abstract: An optical semiconductor device in which a first optical waveguide 407 comprising a silicon-containing amorphous semiconductor layer and a second optical waveguide 409 containing a silicon-containing i-type semiconductor layer as a constituent element are disposed in different layers in a range in which optical interaction can occur. An electro-optical modulator 409 having a pin junction structure comprising a p-type semiconductor layer 403, an i-type semiconductor layer 404, and an n-type semiconductor layer 405 is provided to at least a portion of the second optical waveguide 409, and the index of refraction of the second optical waveguide is varied by the electro-optical modulator, whereby light waves propagated through the first optical waveguide are modulated.

Abstract: An optical semiconductor device in which a first optical waveguide 407 comprising a silicon-containing amorphous semiconductor layer and a second optical waveguide 409 containing a silicon-containing i-type semiconductor layer as a constituent element are disposed in different layers in a range in which optical interaction can occur. An electro-optical modulator 409 having a pin junction structure comprising a p-type semiconductor layer 403, an i-type semiconductor layer 404, and an n-type semiconductor layer 405 is provided to at least a portion of the second optical waveguide 409, and the index of refraction of the second optical waveguide is varied by the electro-optical modulator, whereby light waves propagated through the first optical waveguide are modulated.

Abstract: An object of the present invention is to provide an electro-optical modulator that allows high-speed carrier injection into a silicon-containing i-type amorphous semiconductor, particularly a-Si:H, and has little optical loss. An electro-optical modulator comprises: a substrate 201; an optical waveguide comprising a silicon-containing i-type amorphous semiconductor 204 formed on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 are a crystalline semiconductor layer.

Abstract: An interlayer light wave coupling device includes a substrate; a first core disposed on the substrate and having a first acute structure; a third core spatially set apart from the first core and having a second acute structure; and a second core disposed between the first core and the third core and having a smaller index of refraction than the first core and the third core. The acute structures of the first core and the third core are disposed so as to have no overlap as viewed from above.

Abstract: An interlayer light wave coupling device includes a substrate; a first core disposed on the substrate and having a first acute structure; a third core spatially set apart from the first core and having a second acute structure; and a second core disposed between the first core and the third core and having a smaller index of refraction than the first core and the third core. The acute structures of the first core and the third core are disposed so as to have no overlap as viewed from above.

Abstract: An image generating device includes: a gravity parameter changing section for changing a parameter relating to gravity of each of a plurality of rigid bodies which are constrained to one another and included in a first object based on a positional relationship between each of the plurality of rigid bodies and a second object; a physical calculation section for physically calculating a motion of each of the plurality of rigid bodies included in the first object based on the changed parameter; and an image rendering section for rendering an image representing a surface of the first object based on the motions of the plurality of rigid bodies included in the first object.

Abstract: A semiconductor pointed structure formed at an end portion of the core structure of a semiconductor photonic wire waveguide has a sloped side wall on at least one of the sides that constitute the pointed structure. The semiconductor pointed structure decreases in width and thickness towards the distal end. A method for fabrication of the structure is also disclosed.

Abstract: Provided is an image generating device including: a section for acquiring an arrangement of elements constituting an object with respect to a frame to be processed; an arrangement correction section including a control section and plurality of partial correction sections, for correcting an arrangement of each of the elements; and an image rendering section for rendering an image based on the arrangement of the elements corrected by the arrangement correction step. The plurality of partial correction sections respectively correct the arrangement of at least one of the plurality of elements, and the control section provides control so that at least one of the plurality of partial correction section corrects the arrangement of the elements based on the control data, which associates a state of the object and at least two of the plurality of partial correction sections, and on the state of the object.

Abstract: An image generating device includes: a gravity parameter changing section for changing a parameter relating to gravity of each of a plurality of rigid bodies which are constrained to one another and included in a first object based on a positional relationship between each of the plurality of rigid bodies and a second object; a physical calculation section for physically calculating a motion of each of the plurality of rigid bodies included in the first object based on the changed parameter; and an image rendering section for rendering an image representing a surface of the first object based on the motions of the plurality of rigid bodies included in the first object.

Abstract: The object of the present invention is to provide a device for detecting with higher sensitivity emission light in the form of fluorescence or phosphorescence emitted from a micro-object irradiated by an excitation light. The present invention provides means for suppressing reflected and scattered light arising from excitation light impinging on the semiconductor detection element of the device, comprising a pinhole formed in a fluorescence collecting microlens, through which the excitation light passes, irradiating the micro-object. The device may also be provided with another means for suppressing reflected and scattered excitation light comprising a non-horizontal surface that is not perpendicular to the excitation light, formed on a part of the light-transparent chip surface from which the excitation light exits.

Abstract: The object of the present invention is to provide a device for detecting with higher sensitivity emission light in the form of fluorescence or phosphorescence emitted from a micro-object irradiated by an excitation light. The present invention provides means for suppressing reflected and scattered light arising from excitation light impinging on the semiconductor detection element of the device, comprising a pinhole formed in a fluorescence collecting microlens, through which the excitation light passes, irradiating the micro-object. The device may also be provided with another means for suppressing reflected and scattered excitation light comprising a non-horizontal surface that is not perpendicular to the excitation light, formed on a part of the light-transparent chip surface from which the excitation light exits.

Abstract: In the detection of fluorescence Lf emitted by a micro-object irradiated with an excitation light Le by a semiconductor light-detecting element 20, a converging microlens 62 for converging the excitation light Le elevating the optical density thereof and irradiating the micro-object with the light, causing the micro-object to generate fluorescence Lf due to two-photon absorption, is inserted partway along the light path of the excitation light Le. This enables the fluorescence Lf emitted by the micro-object to be detected with high sensitivity.

Abstract: In the detection of fluorescence Lf emitted by a micro-object irradiated with an excitation light Le by a semiconductor light-detecting element 20, a converging microlens 62 for converging the excitation light Le elevating the optical density thereof and irradiating the micro-object with the light, causing the micro-object to generate fluorescence Lf due to two-photon absorption, is inserted partway along the light path of the excitation light Le. This enables the fluorescence Lf emitted by the micro-object to be detected with high sensitivity.

Abstract: A miniaturized optical excitation and detector system is described for detecting fluorescently labeled analytes in electrophoretic microchips and microarrays. The system uses miniature integrated components, light collection, optical fluorescence filtering, and an amorphous a-Si:H detector for detection. The collection of light is accomplished with proximity gathering and/or a micro-lens system. Optical filtering is accomplished by integrated optical filters. Detection is accomplished utilizing a-Si:H detectors.

Abstract: A miniaturized optical excitation and detector system is described for detecting fluorescently labeled analytes in electrophoretic microchips and microarrays. The system uses miniature integrated components, light collection, optical fluorescence filtering, and an amorphous a-Si:H detector for detection. The collection of light is accomplished with proximity gathering and/or a micro-lens system. Optical filtering is accomplished by integrated optical filters. Detection is accomplished utilizing a-Si:H detectors.