Patents by Inventor Toshihiro Kuriyama
Toshihiro Kuriyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8130305Abstract: A solid-state image sensing device includes: a plurality of light receiving elements arranged in a matrix in a device formation region surrounded by a device isolation region of a semiconductor substrate; a plurality of vertical transfer sections for transferring charges of the light receiving elements in the column direction; and a horizontal transfer section for receiving the charges from the vertical transfer sections and for transferring the received charges in the row direction. The horizontal transfer section includes: a horizontal channel region; and a plurality of horizontal transfer electrodes extending over the horizontal channel region and the device isolation region and being spaced apart from each other. The distance between the horizontal transfer electrodes is larger at a boundary between the device formation region and the device isolation region than in the middle of the horizontal channel region.Type: GrantFiled: July 1, 2009Date of Patent: March 6, 2012Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 8120130Abstract: It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are provided a plurality of photoelectric conversion portions arranged in a matrix on a substrate, a vertical transfer channel arranged between vertical columns of the photoelectric conversion portions, a plurality of vertical transfer electrodes for transferring a charge of the photoelectric conversion portions to the vertical transfer channel, a light-shielding film that is laminated on the vertical transfer electrodes via a first insulating film and has a plurality of window portions, each defining a light-receiving portion of each of the photoelectric conversion portions, and a shunt wiring that is arranged in a region overlapping the vertical transfer channel and is insulated from the light-shielding film by a second insulating film.Type: GrantFiled: June 17, 2008Date of Patent: February 21, 2012Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 8030724Abstract: A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.Type: GrantFiled: May 3, 2010Date of Patent: October 4, 2011Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Publication number: 20110024864Abstract: A semiconductor device includes a through electrode penetrating a semiconductor substrate, a conductor pad formed on the through electrode and made of a conductor electrically connected to the through electrode, and an interconnection layer formed on a surface of the semiconductor substrate and electrically connected to the conductor pad.Type: ApplicationFiled: August 10, 2010Publication date: February 3, 2011Applicant: PANASONIC CORPORATIONInventors: Noboru KOKUSENYA, Toshihiro KURIYAMA
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Patent number: 7847852Abstract: An object of the present invention is to provide a solid-state imaging device that can be slimmed down and have an improved picture quality without sacrificing its sensitivity and the manufacturing method of the solid-state imaging device. The solid-state imaging device includes an imaging unit where unit cells are arranged in a two-dimensional array. Each of these unit cells has a photodiode and a first microlens and a second microlens which are formed above the photodiode. The maximum curvatures of the convex parts become greater from the center part to the periphery of the imaging unit.Type: GrantFiled: August 4, 2005Date of Patent: December 7, 2010Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 7791159Abstract: A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.Type: GrantFiled: October 30, 2008Date of Patent: September 7, 2010Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Publication number: 20100207228Abstract: A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.Type: ApplicationFiled: May 3, 2010Publication date: August 19, 2010Applicant: Panasonic CorporationInventor: Toshihiro KURIYAMA
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Publication number: 20100188536Abstract: The semiconductor element according to an aspect of the present invention is a solid-state imaging element formed on a semiconductor substrate, having an overflow drain structure for draining excessive charges generated in photoelectric conversion elements, and reading out signal charges accumulated in the photoelectric conversion elements to a vertical transfer unit via a readout gate electrode. The solid-state imaging element includes: a first voltage generating circuit which applies, to the semiconductor substrate, substrate voltage defining the height of overflow barrier in the overflow drain structure; and a second voltage generating circuit which selectively generates first voltage and second voltage each including the height of pulse wave superimposed onto the substrate voltage, at a time when readout pulse to be applied to the readout gate electrode is generated.Type: ApplicationFiled: July 9, 2008Publication date: July 29, 2010Applicant: PANASONIC CORPORATIONInventors: Tsuyoshi Hasuka, Toshihiro Kuriyama, Hiroyuki Mori, Junji Manabe
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Patent number: 7760251Abstract: The present invention aims to provide a solid-state imaging device that enables miniaturization of camera while maintaining the level of electrostatic damage resistance in the solid-state imaging device, and includes: an imaging unit 100 that transfers signal charge generated by performing photoelectric conversion on incident light, converts the signal charge into an electric signal, and outputs the electric signal as an image signal; and a peripheral circuit portion 110 which includes: a signal electrode pad 111; a power supply electrode pad 112; and a protection circuit 113 that has diodes 320 and 330 placed in opposition, and that discharges static electricity entering from the exterior, to the power supply electrode pad 112.Type: GrantFiled: May 3, 2005Date of Patent: July 20, 2010Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 7723145Abstract: A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.Type: GrantFiled: November 20, 2008Date of Patent: May 25, 2010Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 7705375Abstract: A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction; and a plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes. Each of the vertical transfer registers includes a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel.Type: GrantFiled: October 23, 2006Date of Patent: April 27, 2010Assignee: Panasonic CorporationInventors: Kenichi Nishijima, Toshihiro Kuriyama
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Patent number: 7671386Abstract: The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.Type: GrantFiled: December 28, 2006Date of Patent: March 2, 2010Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Publication number: 20100020219Abstract: A solid-state image sensing device includes: a plurality of light receiving elements arranged in a matrix in a device formation region surrounded by a device isolation region of a semiconductor substrate; a plurality of vertical transfer sections for transferring charges of the light receiving elements in the column direction; and a horizontal transfer section for receiving the charges from the vertical transfer sections and for transferring the received charges in the row direction. The horizontal transfer section includes: a horizontal channel region; and a plurality of horizontal transfer electrodes extending over the horizontal channel region and the device isolation region and being spaced apart from each other. The distance between the horizontal transfer electrodes is larger at a boundary between the device formation region and the device isolation region than in the middle of the horizontal channel region.Type: ApplicationFiled: July 1, 2009Publication date: January 28, 2010Inventor: Toshihiro Kuriyama
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Patent number: 7548666Abstract: A plurality of light receiving elements are arranged in a matrix with uniform space therebetween in a light receiving region defined on a semiconductor substrate. A plurality of read-out electrodes are formed on the semiconductor substrate in an arrangement corresponding to the light receiving elements to read charges generated by the light receiving elements, a light shield film having openings positioned above the light receiving elements is formed to cover the read-out electrodes, first optical waveguides are formed in the openings above the light receiving elements and second optical waveguides are formed on the light shield film. The second optical waveguides are in the form of dots, stripes or a grid when viewed in plan.Type: GrantFiled: October 19, 2006Date of Patent: June 16, 2009Assignee: Panasonic CorporationInventors: Toshihiro Kuriyama, Atsushi Tomozawa
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Publication number: 20090108391Abstract: A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.Type: ApplicationFiled: October 30, 2008Publication date: April 30, 2009Inventor: Toshihiro KURIYAMA
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Publication number: 20090085137Abstract: In a solid-state imaging device of the present invention, light-sensitive elements 54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate 51. A plurality of detecting electrodes 53 are provided on the semiconductor substrate 51 corresponding to the light-sensitive elements 54 for detecting an electrical charge generated by each light-sensitive element 54. A plurality of interconnections 57 coat the detecting electrodes 53, and apply a voltage thereto. A plurality of reflecting walls 62 are formed in a grid pattern over the interconnection 57 so as to partition the light-sensitive elements 54 individually for reflecting a portion of light entering the semiconductor substrate 51 from above onto the light receiving section of each light-sensitive element 54. The plurality of reflecting walls 62 are electrically insulated from the interconnections 57.Type: ApplicationFiled: December 4, 2008Publication date: April 2, 2009Applicant: PANASONIC CORPORATIONInventor: Toshihiro KURIYAMA
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Publication number: 20090075419Abstract: A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.Type: ApplicationFiled: November 20, 2008Publication date: March 19, 2009Applicant: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 7499094Abstract: Each intralayer lens disposed between a color filter 120 and photoelectric conversion sections has a Fresnel lens structure composed of a center lens 132 and an annular lens 134. As a result, the thickness of the intralayer lenses is reduced, and positions of upper lenses can be lowered without having to reduce the thickness of a color filter.Type: GrantFiled: April 15, 2004Date of Patent: March 3, 2009Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 7473944Abstract: A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.Type: GrantFiled: January 18, 2006Date of Patent: January 6, 2009Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama
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Patent number: 7470965Abstract: In a solid-state imaging device of the present invention, light-sensitive elements 54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate 51. A plurality of detecting electrodes 53 are provided on the semiconductor substrate 51 corresponding to the light-sensitive elements 54 for detecting an electrical charge generated by each light-sensitive element 54. A plurality of interconnections 57 coat the detecting electrodes 53, and apply a voltage thereto. A plurality of reflecting walls 62 are formed in a grid pattern over the interconnection 57 so as to partition the light-sensitive elements 54 individually for reflecting a portion of light entering the semiconductor substrate 51 from above onto the light receiving section of each light-sensitive element 54. The plurality of reflecting walls 62 are electrically insulated from the interconnections 57.Type: GrantFiled: July 20, 2004Date of Patent: December 30, 2008Assignee: Panasonic CorporationInventor: Toshihiro Kuriyama