Patents by Inventor Toshihiro Wakabayashi

Toshihiro Wakabayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210001245
    Abstract: Diabatic distillation column 1 includes first and second cooling devices 11, 12 configured to indirectly cool fluid in rectifying section 2 with a circulating working fluid, first and second heating devices 21, 22 configured to indirectly heat fluid in stripping section 3 with the circulating working fluid, first compressor 31 configured to compress the working fluid from first cooling device 11 on first circulation path P11-P14 between first cooling device 11 and first heating device 21, second compressor 32 configured to compress the working fluid from second cooling device 12 on second circulation path P21-P24 between second cooling device 12 and second heating device 22, first expansion device 41 configured to expand the working fluid from first heating device 21 on first circulation path P11-P14, and second expansion device 42 configured to expand the working fluid from second heating device 22 on second circulation path P21-P24.
    Type: Application
    Filed: November 30, 2018
    Publication date: January 7, 2021
    Applicant: TOYO ENGINEERING CORPORATION
    Inventors: Toshihiro WAKABAYASHI, Masaki TOGO
  • Patent number: 10265640
    Abstract: The duty of internal heat exchange can be flexibly adjusted without impairing energy saving performance of a HIDiC. A method of adjusting the duty of heat exchange in a heat exchange structure of a HIDiC includes totally condensing a portion of the vapor fed to a heat exchange structure in a heat exchange structure; and providing a liquid control valve downstream of the heat exchange structure on the first line, without providing a control valve on a vapor-flowing part of first and second lines of the HIDiC, and adjusting a flow rate of a portion of the compressor outlet vapor flowing into the heat exchange structure by using the control valve, while compensating for a pressure loss needed for the control valve by using a liquid head of a condensate, and/or by using pressurization by a pump.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: April 23, 2019
    Assignee: Toyo Engineering Corporation
    Inventors: Takato Nakao, Toshihiro Wakabayashi, Kouichi Tachikawa
  • Patent number: 10016699
    Abstract: Significant energy saving can be achieved for a distillation column even when the distillation column has a large column temperature difference. Provided is a distillation column including a first and second columns, wherein the first column includes a part of a rectifying section or a part of a stripping section; the second column includes, if the first column includes a part of the rectifying section, the rest of the rectifying section and the whole of the stripping section, or the second column includes, if the first column includes a part of the stripping section, the rest of the stripping section and the whole of the rectifying section; and the second column constitutes a mechanical-heat-pump distillation column.
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: July 10, 2018
    Assignee: Toyo Engingeering Corporation
    Inventors: Toshihiro Wakabayashi, Kouichi Tachikawa
  • Patent number: 9908060
    Abstract: A distillation apparatus of the present invention includes high-pressure column 1 corresponding to a region above a heat exchanging section located at a lowermost part of a region including a trayed section or a packed bed section, which is used as a rectifying section; and low-pressure column 2 that is located above as seen from high-pressure column 1, which integrates a region including a trayed section or a packed bed section which is used as a stripping section, with rectifying section corresponding portion 2g that corresponds to a region locating below the heat exchanging section located at the lowermost part in the rectifying section. Rectifying section corresponding portion 2g is located on top 2c of the stripping section in low-pressure column 2 so that rectifying section corresponding portion 2g continues to the stripping section.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: March 6, 2018
    Assignee: Toyo Engineering Corporation
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Patent number: 9851140
    Abstract: A distillation apparatus includes a first distillation column and one or more second distillation columns. A higher-pressure part of the first distillation column includes at least part of a rectifying section, and performs gas-liquid contact at a relatively high pressure. A lower pressure-part of the first distillation column includes at least part of a stripping section and performs gas-liquid contact at a relatively low pressure. A vapor line, which includes a pressurizing means, directs a vapor discharged from a column top of the lower-pressure part to a column bottom of the higher-pressure part. A liquid line directs a liquid discharged from the column bottom of the higher-pressure part to the column top of the lower pressure part. Corresponding heat exchange structures transfer heat in both directions between the rectifying section of the first distillation column and at least one second distillation column.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: December 26, 2017
    Assignee: TOYO ENGINEERING CORPORATION
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Publication number: 20170209806
    Abstract: The duty of internal heat exchange can be flexibly adjusted without impairing energy saving performance of a HIDiC. A method of adjusting the duty of heat exchange in a heat exchange structure of a HIDiC includes totally condensing a portion of the vapor fed to a heat exchange structure in a heat exchange structure; and providing a liquid control valve downstream of the heat exchange structure on the first line, without providing a control valve on a vapor-flowing part of first and second lines of the HIDiC, and adjusting a flow rate of a portion of the compressor outlet vapor flowing into the heat exchange structure by using the control valve, while compensating for a pressure loss needed for the control valve by using a liquid head of a condensate, and/or by using pressurization by a pump.
    Type: Application
    Filed: January 25, 2017
    Publication date: July 27, 2017
    Inventors: Takato Nakao, Toshihiro Wakabayashi, Kouichi Tachikawa
  • Patent number: 9573866
    Abstract: An apparatus includes a first distillation apparatus for obtaining a fraction enriched in C8+ aromatics; a second distillation apparatus for obtaining a fraction enriched in C8 aromatics; an adsorption separation apparatus for obtaining an extract containing para-xylene and a raffinate containing xylene isomers; a third distillation apparatus for obtaining a fraction enriched in para-xylene; and a fourth distillation apparatus for obtaining a fraction enriched in xylene isomers. The second distillation apparatus includes a high-pressure part including a rectifying section; a low-pressure part including a stripping section; a line for directing overhead vapor of the low-pressure part to a column bottom of the high-pressure part; a line for directing a column bottom liquid of the high-pressure part to a column top of the low-pressure part; and a heat exchange structure for transferring heat from the rectifying section to the stripping section.
    Type: Grant
    Filed: November 11, 2013
    Date of Patent: February 21, 2017
    Assignee: TOYO ENGINEERING CORPORATION
    Inventors: Shouta Io, Toshihiro Wakabayashi
  • Patent number: 9278295
    Abstract: A distillation apparatus includes a rectifying column, a stripping column, a first pipe that communicates a column top of the stripping column with a column bottom of the rectifying column, and a compressor configured to compress vapor from the stripping column and then to feed the compressed vapor to the rectifying column. The distillation apparatus further includes a heat exchanger located at a predetermined stage of the rectifying column, a liquid withdrawal unit located at a predetermined stage of the stripping column and configured to withdraw a part of liquid from the predetermined stage to an outside of the column, a second pipe that introduces the liquid from the liquid withdrawal unit to the heat exchanger, and a third pipe that introduces fluids introduced through the second pipe to the heat exchanger and then discharged out of the heat exchanger to a stage directly below the liquid withdrawal unit.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: March 8, 2016
    Assignee: TOYO ENGINEERING CORPORATION
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Patent number: 9266034
    Abstract: A distillation apparatus includes a rectifying column, a stripping column located above seen from the rectifying column, a liquid sump unit located at a predetermined stage of the stripping column and configured to hold liquid that has flowed downward, a heat exchanger located in the liquid sump unit, a second pipe for introducing vapor in the rectifying column to the heat exchanger of the stripping column, and a third pipe for introducing fluids flowing out from the heat exchanger of the stripping column to the rectifying column. Further, a flare line having lower pressure than pressure in the rectifying column is connected to a downstream side of the third pipe. The distillation apparatus can switch a first flow toward an inside of the rectifying column through the third pipe to a second flow branching from the third pipe toward a pipe at a lower pressure side.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: February 23, 2016
    Assignee: TOYO ENGINEERING CORPORATION
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Publication number: 20150202547
    Abstract: Significant energy saving can be achieved for a distillation column even when the distillation column has a large column temperature difference. Provided is a distillation column including a first and second columns, wherein the first column includes a part of a rectifying section or a part of a stripping section; the second column includes, if the first column includes a part of the rectifying section, the rest of the rectifying section and the whole of the stripping section, or the second column includes, if the first column includes a part of the stripping section, the rest of the stripping section and the whole of the rectifying section; and the second column constitutes a mechanical-heat-pump distillation column.
    Type: Application
    Filed: January 9, 2015
    Publication date: July 23, 2015
    Inventors: Toshihiro Wakabayashi, Kouichi Tachikawa
  • Publication number: 20150143845
    Abstract: A distillation apparatus includes a first distillation column and one or more second distillation columns. A higher-pressure part of the first distillation column includes at least part of a rectifying section, and performs gas-liquid contact at a relatively high pressure. A lower pressure-part of the first distillation column includes at least part of a stripping section and performs gas-liquid contact at a relatively low pressure. A vapor line, which includes a pressurizing means, directs a vapor discharged from a column top of the lower-pressure part to a column bottom of the higher-pressure part. A liquid line directs a liquid discharged from the column bottom of the higher-pressure part to the column top of the lower pressure part. Corresponding heat exchange structures transfer heat in both directions between the rectifying section of the first distillation column and at least one second distillation column.
    Type: Application
    Filed: November 20, 2014
    Publication date: May 28, 2015
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Publication number: 20140142364
    Abstract: An apparatus includes a first distillation apparatus for obtaining a fraction enriched in C8+ aromatics; a second distillation apparatus for obtaining a fraction enriched in C8 aromatics; an adsorption separation apparatus for obtaining an extract containing para-xylene and a raffinate containing xylene isomers; a third distillation apparatus for obtaining a fraction enriched in para-xylene; and a fourth distillation apparatus for obtaining a fraction enriched in xylene isomers. The second distillation apparatus includes a high-pressure part including a rectifying section; a low-pressure part including a stripping section; a line for directing overhead vapor of the low-pressure part to a column bottom of the high-pressure part; a line for directing a column bottom liquid of the high-pressure part to a column top of the low-pressure part; and a heat exchange structure for transferring heat from the rectifying section to the stripping section.
    Type: Application
    Filed: November 11, 2013
    Publication date: May 22, 2014
    Applicant: Toyo Engineering Corporation
    Inventors: Shouta Io, Toshihiro Wakabayashi
  • Publication number: 20140083839
    Abstract: The present invention provides a method for operating a stripper that is provided for a separating process in an aromatic component processing apparatus in which the stripper separates a component that is lighter than an aromatic component from the aromatic component via a distillation operation. In the method, using a HIDiC as the stripper, the pressure of the column top of rectifying section (201) of the HIDiC is determined, and the pressure of the column top of stripping section (202) of the HIDiC is set to be lower than the pressure of the column top of rectifying section (201).
    Type: Application
    Filed: September 16, 2013
    Publication date: March 27, 2014
    Applicant: Toyo Engineering Corporation
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Publication number: 20130256115
    Abstract: A distillation apparatus of the present invention includes high-pressure column 1 corresponding to a region above a heat exchanging section located at a lowermost part of a region including a trayed section or a packed bed section, which is used as a rectifying section; and low-pressure column 2 that is located above as seen from high-pressure column 1, which integrates a region including a trayed section or a packed bed section which is used as a stripping section, with rectifying section corresponding portion 2g that corresponds to a region locating below the heat exchanging section located at the lowermost part in the rectifying section. Rectifying section corresponding portion 2g is located on top 2c of the stripping section in low-pressure column 2 so that rectifying section corresponding portion 2g continues to the stripping section.
    Type: Application
    Filed: March 7, 2013
    Publication date: October 3, 2013
    Applicant: TOYO ENGINEERING CORPORATION
    Inventors: Toshihiro Wakabayashi, Takato Nakao
  • Patent number: 8440056
    Abstract: Provided is a heat integrated distillation apparatus includes: rectifying column including a trayed section or a packed bed section; stripping column including a trayed section or a packed bed section located higher than rectifying column; first pipe for connecting top part of the stripping column with bottom part of the rectifying column; and compressor that compresses vapor from top part of the stripping column to feed the compressed vapor to bottom part of the rectifying column. The heat integrated distillation apparatus further includes: heat exchanger located either at the trayed section or a packed bed section of rectifying column or at the trayed section or a packed bed section of stripping column; second pipe; and third pipe for circulating fluids through the heat exchanger.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: May 14, 2013
    Assignees: National Institute of Advanced Industrial Science and Technology, Toyo Engineering Company
    Inventors: Masaru Nakaiwa, Toshihiro Wakabayashi, Akihiko Tamakoshi
  • Publication number: 20130001696
    Abstract: A gate electrode and an electrode for protective diode are coupled to each other. An insulating film below the electrode for protective diode makes a leak current flow between the electrode for protective diode and an electron transit layer and an electron supply layer when a voltage equal to or more than a given value is applied to the gate electrode. The given value is higher than a voltage by which a HEMT is on-operated and lower than a breakdown voltage of a gate insulating film.
    Type: Application
    Filed: June 26, 2012
    Publication date: January 3, 2013
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Shinichi Akiyama, Yoshiyuki Kotani, Toshihiro Wakabayashi, Masato Miyamoto
  • Publication number: 20120125761
    Abstract: Provided is a heat integrated distillation apparatus in which energy efficiency and a degree of freedom in design is higher than a normal distillation column, and in which maintenance of the apparatus is simple. The heat integrated distillation apparatus includes: rectifying column (1); stripping column (2) located higher than rectifying column (1); first pipe (23) for connecting top part (2c) of the stripping column with bottom part (1a) of the rectifying column; and compressor (4) that compresses vapor from top part (2c) of the stripping column to feed the compressed vapor to bottom part to (1a) of the rectifying column.
    Type: Application
    Filed: September 24, 2010
    Publication date: May 24, 2012
    Applicant: TOYO ENGINEERING CORPORATION
    Inventors: Masaru Nakaiwa, Toshihiro Wakabayashi, Akihiko Tamakoshi
  • Patent number: 8012650
    Abstract: A semiconductor device manufacturing method allowing effective inspection at low cost of a wafer having formed thereon chips. When forming chips on the wafer, a reticle having formed thereon chip patterns, monitor element/circuit patterns and connection patterns is used according to a formation step of the chips. The reticle is constructed such that a part of the monitor element/circuit patterns and the connection patterns are formed in the inner side area of an outer peripheral dicing area and when exposing adjacent shot positions, the pattern is formed on a portion where no outer peripheral dicing areas overlap whereas no pattern is formed on a part of a portion where outer peripheral dicing areas overlap. When using the reticle, a circuit which surrounds the whole chip formation area can be formed with the chips.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: September 6, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Toshihiro Wakabayashi
  • Patent number: 7851890
    Abstract: By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this non-selective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: December 14, 2010
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Hidekazu Sato, Toshihiro Wakabayashi
  • Publication number: 20080035955
    Abstract: By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this non-selective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.
    Type: Application
    Filed: July 25, 2007
    Publication date: February 14, 2008
    Applicant: FUJITSU LIMITED
    Inventors: Hidekazu Sato, Toshihiro Wakabayashi