Abstract: In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on which the terminal electrodes are provided. Through electrodes connecting to the terminal electrodes and piercing the insulating layer are formed. Metal wirings connecting to the through electrodes are formed on the insulating layer. External terminal electrodes connecting the metal wiring are formed. Second spacing, spacing between the adjacent external terminal electrodes, is larger than first spacing, spacing between the adjacent terminal electrodes.

Abstract: A wiring board (package) has a structure in which multiple wiring layers are stacked one on top of another with insulating layers each interposed between corresponding two of the wiring layers, and the wiring layers are connected to one another through vias formed in each of the insulating layers. In a peripheral region of the package, reinforcing patterns are provided on the same surfaces where the corresponding wiring layers are provided, respectively. Each of the reinforcing patterns is formed of a conductive layer formed on the same surface where the corresponding one of the wiring layers is provided, and is provided in an intermittent ring-like shape when viewed in a planar view.

Abstract: In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on which the terminal electrodes are provided. Through electrodes connecting to the terminal electrodes and piercing the insulating layer are formed. Metal wirings connecting to the through electrodes are formed on the insulating layer. External terminal electrodes connecting the metal wiring are formed. Second spacing, spacing between the adjacent external terminal electrodes, is larger than first spacing, spacing between the adjacent terminal electrodes.

Abstract: In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on which the terminal electrodes are provided. Through electrodes connecting to the terminal electrodes and piercing the insulating layer are formed. Metal wirings connecting to the through electrodes are formed on the insulating layer. External terminal electrodes connecting the metal wiring are formed. Second spacing, spacing between the adjacent external terminal electrodes, is larger than first spacing, spacing between the adjacent terminal electrodes.

Abstract: A wiring board (package) has a structure in which multiple wiring layers are stacked one on top of another with insulating layers each interposed between corresponding two of the wiring layers, and the wiring layers are connected to one another through vias formed in each of the insulating layers. In a peripheral region of the package, reinforcing patterns are provided on the same surfaces where the corresponding wiring layers are provided, respectively. Each of the reinforcing patterns is formed of a conductive layer formed on the same surface where the corresponding one of the wiring layers is provided, and is provided in an intermittent ring-like shape when viewed in a planar view.

Abstract: In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on which the terminal electrodes are provided. Through electrodes connecting to the terminal electrodes and piercing the insulating layer are formed. Metal wirings connecting to the through electrodes are formed on the insulating layer. External terminal electrodes connecting the metal wiring are formed. Second spacing, spacing between the adjacent external terminal electrodes, is larger than first spacing, spacing between the adjacent terminal electrodes.