Abstract: A semiconductor device comprises a heavily doped semiconductor layer exposed to both principal surfaces of a semiconductor substrate, a semiconductor element such as a diode, a bipolar transistor, and a MOS transistor, etc. formed on one principal surface side of the semiconductor substrate, a resistor region connected in series with the semiconductor element on the other principal surface side of the semiconductor substrate, and an electrode for current detection kept in contact with the semiconductor layer on the one principal surface side.

Abstract: Field plates for relaxing electric fields are provided for an active element in a semiconductor integrated circuit. A field plate integral with an electrode making ohmic contact with an elongated strip shaped diffusion region and extending beyond a pn-junction formed between the diffusion region and an adjacent region to surround the pn-junction has a larger width at its opposite ends than a width at its linear portions. A high breakdown voltage can be obtained by thus configuring the field plate without changing the diffusion region in size.

Abstract: The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

Abstract: Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.