Abstract: A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rb1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yb1 represents a divalent linking group containing an ester bond (—C(?O)—O— or —O—C(?O)—), Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group. Va1 is a divalent hydrocarbon group. na1 represents an integer of 0 to 2. Ra?12 and Ra?13 are a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. Ra?14 is a phenyl group, a naphthyl group, or an anthryl group. In general formula (b1), Rb1 represents a cyclic hydrocarbon group. Yb1 represents a divalent linking group containing an ester bond. Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond. m is an integer of 1 or more, and Mm+ is an m-valent organic cation.

Abstract: A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group. Va1 is a divalent hydrocarbon group. na1 represents an integer of 0 to 2. Ra?12 and Ra?13 are a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. Ra?14 is a phenyl group, a naphthyl group, or an anthryl group. In general formula (b1), Rb1 represents a cyclic hydrocarbon group. Yb1 represents a divalent linking group containing an ester bond. Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond. m is an integer of 1 or more, and Mm+ is an m-valent organic cation.

Abstract: A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rb1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yb1 represents a divalent linking group containing an ester bond (—C(?O)—O— or —O—C(?O)—), Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Va1 is a divalent hydrocarbon group, na1 represents an integer of 0 to 2, Ya0 is a carbon atom, Xa0 is a group forming a monocyclic aliphatic hydrocarbon group together with Ya0, and Ra00 is an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), Rb1 represents a cyclic hydrocarbon group, Yb1 represents a divalent linking group containing an ester bond, Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, and Mm+ is an m-valent organic cation.

Abstract: A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length LR of the rod-like molecule is 2.0 or less times LN, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.

Abstract: A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length LR of the rod-like molecule is 2.0 or less times LN, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.

Abstract: Disclosed are: a composition for forming a resist protection film, which shows less damage to a resist film, can form a good, rectangular resist pattern, and can be used regardless of the structure of a resin used in a resist composition; and a method for forming a resist pattern by using the composition. Specifically, disclosed are: a composition for forming a resist protection film, which comprises (a) an alkali-soluble polymer and (b) an ether-based solvent; and a method for forming a resist pattern by using the composition.

Abstract: A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Abstract: Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Abstract: Disclosed are: a composition for forming a resist protection film, which shows less damage to a resist film, can form a good, rectangular resist pattern, and can be used regardless of the structure of a resin used in a resist composition; and a method for forming a resist pattern by using the composition. Specifically, disclosed are: a composition for forming a resist protection film, which comprises (a) an alkali-soluble polymer and (b) an ether-based solvent; and a method for forming a resist pattern by using the composition.

Abstract: A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.