Patents by Inventor Toshimitsu Miyada

Toshimitsu Miyada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Valve and semiconductor fabricating equipment using the same
    Patent number: 5380396
    Abstract: Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.
    Type: Grant
    Filed: October 19, 1993
    Date of Patent: January 10, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuhiro Shikida, Kazuo Sato, Yoshio Kawamura, Shinji Tanaka, Yasuaki Horiuchi, Akira Koide, Toshimitsu Miyada
  • Valve and semiconductor fabricating equipment using the same
    Patent number: 5284179
    Abstract: Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.
    Type: Grant
    Filed: May 29, 1992
    Date of Patent: February 8, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuhiro Shikida, Kazuo Sato, Yoshio Kawamura, Shinji Tanaka, Yasuaki Horiuchi, Akira Koide, Toshimitsu Miyada