Abstract: A photoelectric conversion element includes a first photoelectric conversion unit configured to generate an electron serving as a signal charge, a second photoelectric conversion unit configured to generate a hole serving as a signal charge, a first floating diffusion region to which the electron generated in the first photoelectric conversion unit is transferred, a second floating diffusion region to which the hole generated in the second photoelectric conversion unit is transferred, an amplifying transistor including a gate electrically connected to the first floating diffusion region and the second floating diffusion region, a first charge ejection unit configured to eject the electron generated in the first photoelectric conversion unit, and a second charge ejection unit configured to eject the hole generated in the second photoelectric conversion unit, wherein the first photoelectric conversion unit and the second photoelectric conversion unit are arranged along a principal surface of a semiconductor sub

Abstract: A photoelectric conversion device includes a first photoelectric conversion portion configured to generate electrons; a second photoelectric conversion portion configured to generate holes; a charge-to-voltage conversion portion including an n-type first semiconductor region configured to collect the generated electrons and a p-type second semiconductor region configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.

Abstract: A semiconductor device is provided. The device generates a signal based on both a first carrier generated in a first photodiode and a second carrier generated in a second photodiode. The first photodiode includes a first region of a second conductivity type and a second region of a first conductivity type arranged between a surface of a substrate and the first region. The second photodiode includes a third region of the first conductivity type and a fourth region of the second conductivity type arranged between the surface and the third region. A fifth region of the first conductivity type is provided at a position farther apart from the surface than the first region. A peak of an impurity concentration of the third region is positioned in a range where the first region exists between the second region and the fifth region.

Abstract: A semiconductor apparatus includes a first photodiode arranged in a semiconductor substrate, a second photodiode arranged in the semiconductor substrate, a charge voltage conversion part connected to a cathode of the first photodiode and an anode of the second photodiode and configured to convert a charge amount in accordance with electrons generated in the first photodiode and holes generated in the second photodiode into a voltage, and a signal generation part configured to generate a signal in accordance with the voltage of the charge voltage conversion part.

Abstract: A photoelectric conversion apparatus, comprising first and second photoelectric conversion portions, a charge holding portion, and first and second transferring portions for transferring charges generated in the first and second photoelectric conversion portions, respectively, to the charge holding portion, wherein a first ratio is a ratio of an amount of electrons transferred by the first transferring portion to an amount of the electrons generated in the first photoelectric conversion portion, a second ratio is a ratio of an amount of holes transferred by the second transferring portion to an amount of the holes generated in the second photoelectric conversion portion, and a ratio of the first ratio to the second ratio is lower than a ratio of mobility of electrons to mobility of holes.

Abstract: A semiconductor device is provided. The device generates a signal based on both a first carrier generated in a first photodiode and a second carrier generated in a second photodiode. The first photodiode includes a first region of a second conductivity type and a second region of a first conductivity type arranged between a surface of a substrate and the first region. The second photodiode includes a third region of the first conductivity type and a fourth region of the second conductivity type arranged between the surface and the third region. A fifth region of the first conductivity type is provided at a position farther apart from the surface than the first region. A peak of an impurity concentration of the third region is positioned in a range where the first region exists between the second region and the fifth region.

Abstract: A semiconductor apparatus includes a first photodiode arranged in a semiconductor substrate, a second photodiode arranged in the semiconductor substrate, a charge voltage conversion part connected to a cathode of the first photodiode and an anode of the second photodiode and configured to convert a charge amount in accordance with electrons generated in the first photodiode and holes generated in the second photodiode into a voltage, and a signal generation part configured to generate a signal in accordance with the voltage of the charge voltage conversion part.

Abstract: A photoelectric conversion device includes a first photoelectric conversion portion configured to generate electrons; a second photoelectric conversion portion configured to generate holes; a charge-to-voltage conversion portion including an n-type first semiconductor region configured to collect the generated electrons and a p-type second semiconductor region configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.

Abstract: A photoelectric conversion element includes a first photoelectric conversion unit configured to generate an electron serving as a signal charge, a second photoelectric conversion unit configured to generate a hole serving as a signal charge, a first floating diffusion region to which the electron generated in the first photoelectric conversion unit is transferred, a second floating diffusion region to which the hole generated in the second photoelectric conversion unit is transferred, an amplifying transistor including a gate electrically connected to the first floating diffusion region and the second floating diffusion region, a first charge ejection unit configured to eject the electron generated in the first photoelectric conversion unit, and a second charge ejection unit configured to eject the hole generated in the second photoelectric conversion unit, wherein the first photoelectric conversion unit and the second photoelectric conversion unit are arranged along a principal surface of a semiconductor sub

Abstract: A solid-state image sensor is provided. The sensor includes a substrate having a light-receiving surface. The substrate includes a charge accumulation portion that forms part of a photoelectric conversion element, a charge holding portion arranged at a position deeper than the charge accumulation portion from the light-receiving surface, and a first transfer portion configured to transfer charges generated by the photoelectric conversion element to the charge holding portion along a depth direction of the substrate. A distance between the charge holding portion and the light-receiving surface is not less than 4 ?m.

Abstract: A solid-state image sensor is provided. The sensor includes a substrate having a light-receiving surface. The substrate includes a charge accumulation portion that forms part of a photoelectric conversion element, a charge holding portion arranged at a position deeper than the charge accumulation portion from the light-receiving surface, and a first transfer portion configured to transfer charges generated by the photoelectric conversion element to the charge holding portion along a depth direction of the substrate. A distance between the charge holding portion and the light-receiving surface is not less than 4 ?m.

Abstract: Provided is a display apparatus, which has both high light-emission efficiency and good display performance. The display apparatus includes multiple pixels, each of the multiple pixels including an organic light-emitting device including a first electrode, a light-emitting layer, and a second electrode, the multiple pixels including an optical unit for allowing a part of light emitted from the light-emitting layer to exit to outside while changing an exiting direction thereof, in which, in the multiple pixels including the optical unit, an optical distance between the light-emitting layer and the first electrode or an optical distance between the light-emitting layer and the second electrode is set to a predetermined value.

Abstract: Provided is a display apparatus, which has both high light-emission efficiency and good display performance. The display apparatus includes multiple pixels, each of the multiple pixels including an organic light-emitting device including a first electrode, a light-emitting layer, and a second electrode, the multiple pixels including an optical unit for allowing a part of light emitted from the light-emitting layer to exit to outside while changing an exiting direction thereof, in which, in the multiple pixels including the optical unit, an optical distance between the light-emitting layer and the first electrode or an optical distance between the light-emitting layer and the second electrode is set to a predetermined value.

Abstract: An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emitting material and being configured to emit light toward the first electrode and the second electrode. The light emitted toward the first electrode is reflected from a reflection plane located at the first electrode to cause interference with the light emitted toward the second electrode. The interference provides an interference intensity distribution having a maximum peak at a wavelength ?1. The light-emitting material of the light-emitting layer exhibits a photoluminescence spectrum having a maximum peak at a wavelength ?2. The organic light-emitting element produces an electroluminescence spectrum having a maximum peak at a wavelength ?3. These wavelengths satisfy the relationships: ?2??3 and |?2??3|<|?2??1|.

Abstract: In a display apparatus in which a plurality of pixel units including a plurality of pixels whose emission colors are different are arranged and white is displayable by the pixel unit, the pixel includes an organic EL device, and lenses are provided in the pixel unit to minimize a difference of currents supplied to the organic EL devices for respective emission colors when white of desired luminance is displayed.

Abstract: A display apparatus includes pixel units, each including a plurality of pixels having different emission colors. The pixel unit is provided with lenses so that the difference in deterioration property among the emission colors of the pixels.

Abstract: A pixel unit having two or more pixels different in emission color is provided with lenses in such a manner that the difference of the angular dependence of brightness in organic EL elements for every emission color of the pixels becomes small.

Abstract: Provided is a thin organic light-emitting device which exhibits satisfactory emission characteristics and is hardly affected by film thickness fluctuation in individual layers and exhibits stable emission characteristics and which includes a substrate, a first electrode provided on the substrate, an organic compound layer provided on the first electrode, a second electrode provided on the organic compound layer, and a first sealing layer provided on the light extraction side of the second electrode, in which an optical distance between a first reflective surface located on the substrate side and a second reflective surface located on the sealing layer side is adjusted so as to form a resonance portion of a resonator structure for resonating light emitted from the organic compound layer, and in which the second reflective layer is an interface on the light extraction side of the first sealing layer.

Abstract: A novel phenanthroline compound is provided which is represented by the general formula [I]: (wherein R1, R2, R3, R4, R5 and R6 are the same or different and each is selected from a hydrogen atom, an unsubstituted or substituted alkyl group, an unsubstituted or substituted aralkyl group, an unsubstituted or substituted aryl group, an unsubstituted or substituted heterocyclic group, and a halogen atom; and Ar1 and Ar2 are the same or different and each is selected from an unsubstituted or substituted fluorenyl group, an unsubstituted or substituted fluoranthenyl group, an unsubstituted or substituted perylenyl group, and an unsubstituted or substituted carbazolyl group). An organic light emitting device using the phenanthroline compound is also provided that has a light output with a high efficiency and a high luminance and has a high long-term durability.

Abstract: In a light emitting display apparatus, excellent color reproducibility and high luminance for an emission color having a low color purity and low emission efficiency are realized. An electroluminescent layer whose color purity and emission efficiency are to be improved is stacked as a first layer on a substrate, and is interposed between a reflective electrode layer and a semi-reflective electrode, and then light extracted from the electroluminescent layer is intensified by interference between a reflective surface in the reflective electrode layer and a reflective surface in the semi-reflective electrode.