Abstract: A bonding method in which applied is a prescribed conductive bonding material, which contains a molded article of a metal powder. The metal powder is one or more selected from the group consisting of a gold powder, a silver powder, a platinum powder, and a palladium powder, and has a purity of 99.9% by mass or more, and an average particle size of 0.005 ?m to 1.0 ?m, and the conductive bonding material has a compressive deformation rate M, represented by the following expression, of 5% or more and 30% or less when compressed with a compression pressure of 5 MPa. [Expression 1] M={(h1?h2)/h1}×100, wherein h1 represents an average thickness of the conductive bonding material before compression, and h2 represents an average thickness of the conductive bonding material after the compression.

Abstract: The interposer substrate is joined in an overlapping state to one or more members having a connection part at one place or more, and electrically connected to the member. The interposer substrate includes a base material having one or more connection regions corresponding to connection parts of the member to be joined. A plurality of through-holes are formed in the connection region. A segment as one unit for electrical connection is constituted by forming the plurality of through-holes adjacent to each other. One or more segments are formed in the connection region. In the through-hole are formed a through electrode and a bump with a wide width formed at an end of the through electrode. The through electrode and bump are composed of a metal powder sintered body formed by sintering a metal powder including gold or the like having a predetermined purity and average particle size.

Abstract: A gold powder comprising gold having a purity of 99.9% by mass or more and having an average particle size of 0.01 ?m or more and 1.0 ?m or less, a content of a chloride ion is 100 ppm or less, and a content of a cyanide ion is 10 ppm or more and 1000 ppm or less. A total of the content of a chloride ion and the content of a cyanide ion is preferably 110 ppm or more and 1000 ppm or less. The gold powder has improved adaptability to various processes including bonding or the like with a content of a chloride ion, that is, an impurity, optimized. A gold paste using this gold powder is suitably used in various uses for bonding such as die bonding of a semiconductor chip, sealing a semiconductor package, and forming an electrode/wire.

Abstract: A sealing structure including: a set of base members forming a sealed space; a through-hole which is formed in at least one of the base members, and communicates with the sealed space; and a sealing member that seals the through-hole. An underlying metal film including a bulk-like metal such as gold is provided on a surface of the base member provided with the through-hole. The sealing member seals the through-hole while being bonded to the underlying metal film, and includes: a sealing material which is bonded to the underlying metal film, and includes a compressed product of a metal powder of gold or the like, the metal powder having a purity of 99.9% by mass or more; and a lid-like metal film which is bonded to the sealing material, and includes a bulk-like metal such as gold. Further, the sealing material includes: an outer periphery-side densified region being in contact with an underlying metal film; and a center-side porous region being in contact with the through-hole.

Abstract: A bonding method in which applied is a prescribed conductive bonding material, which contains a molded article of a metal powder. The metal powder is one or more selected from the group consisting of a gold powder, a silver powder, a platinum powder, and a palladium powder, and has a purity of 99.9% by mass or more, and an average particle size of 0.005 µm to 1.0 µm, and the conductive bonding material has a compressive deformation rate M, represented by the following expression, of 5 % or more and 30% or less when compressed with a compression pressure of 5 MPa. [Expression 1] M = {(h1 - h2)/h1} x 100, wherein h1 represents an average thickness of the conductive bonding material before compression, and h2 represents an average thickness of the conductive bonding material after the compression.

Abstract: A gold powder comprising gold having a purity of 99.9% by mass or more and having an average particle size of 0.01 ?m or more and 1.0 ?m or less, a content of a chloride ion is 100 ppm or less, and a content of a cyanide ion is 10 ppm or more and 1000 ppm or less. A total of the content of a chloride ion and the content of a cyanide ion is preferably 110 ppm or more and 1000 ppm or less. The gold powder has improved adaptability to various processes including bonding or the like with a content of a chloride ion, that is, an impurity, optimized. A gold paste using this gold powder is suitably used in various uses for bonding such as die bonding of a semiconductor chip, sealing a semiconductor package, and forming an electrode/wire.

Abstract: A sealing structure including: a set of base members forming a sealed space; a through-hole which is formed in at least one of the base members, and communicates with the sealed space; and a sealing member that seals the through-hole. An underlying metal film including a bulk-like metal such as gold is provided on a surface of the base member provided with the through-hole. The sealing member seals the through-hole while being bonded to the underlying metal film, and includes: a sealing material which is bonded to the underlying metal film, and includes a compressed product of a metal powder of gold or the like, the metal powder having a purity of 99.9% by mass or more; and a lid-like metal film which is bonded to the sealing material, and includes a bulk-like metal such as gold. Further, the sealing material includes: an outer periphery-side densified region being in contact with an underlying metal film; and a center-side porous region being in contact with the through-hole.

Abstract: A sealing structure with a surface of a base material with a through-hole, an underlying metal film, and a sealing member bonded to the underlying metal film to seal the through-hole. The sealing member includes a compressed product of a metal powder including gold having a purity of 99.9% by mass or more and a lid-like metal film including a bulk-like metal including gold and having a thickness of not less than 0.01 ?m and not more than 5 ?m. The sealing material includes an outer periphery-side densified region in contact with an underlying metal film and a center-side porous region in contact with the through-hole. The shape of pores in the densified region is specified, and the horizontal length (l) of a pore in the radial direction at any cross-section of the densified region and the width (W) of the densified region satisfy the relationship of l?0.1W.

Abstract: A sealing structure with a surface of a base material with a through-hole, an underlying metal film, and a sealing member bonded to the underlying metal film to seal the through-hole. The sealing member includes a compressed product of a metal powder including gold having a purity of 99.9% by mass or more and a lid-like metal film including a bulk-like metal including gold and having a thickness of not less than 0.01 ?m and not more than 5 ?m. The sealing material includes an outer periphery-side densified region in contact with an underlying metal film and a center-side porous region in contact with the through-hole. The shape of pores in the densified region is specified, and the horizontal length (l) of a pore in the radial direction at any cross-section of the densified region and the width (W) of the densified region satisfy the relationship of l?0.1W.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt % or more and an average particle size of 0.01 ?m to 1.0 ?m, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 ?m or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.

Abstract: The present invention relates to a package production method includes the step of superposing a pair of substrates on each other, and bonding the substrates to each other to hermetically seal the inside of a sealing region surrounded by a sealing material, which is formed on any of the substrates. The sealing material is formed of a sintered body obtained by sintering a metal powder of at least one selected from gold, silver, palladium and platinum, the metal powder having a purity of 99.9% by weight or more and an average particle size of 0.005 ?m to 1.0 ?m, at least one core material having a width smaller than the width of the sealing material in a cross-sectional shape, and protruding from the periphery is formed on the substrate, and the core material compresses the sealing material to exhibit a sealing effect when the pair of substrates are bonded to each other. Accordingly, a sufficient sealing effect can be exhibited while a pressuring force to the substrate is reduced.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention relates to a package production method includes the step of superposing a pair of substrates on each other, and bonding the substrates to each other to hermetically seal the inside of a sealing region surrounded by a sealing material, which is formed on any of the substrates. The sealing material is formed of a sintered body obtained by sintering a metal powder of at least one selected from gold, silver, palladium and platinum, the metal powder having a purity of 99.9% by weight or more and an average particle size of 0.005 ?m to 1.0 ?m, at least one core material having a width smaller than the width of the sealing material in a cross-sectional shape, and protruding from the periphery is formed on the substrate, and the core material compresses the sealing material to exhibit a sealing effect when the pair of substrates are bonded to each other. Accordingly, a sufficient sealing effect can be exhibited while a pressuring force to the substrate is reduced.

Abstract: The present invention is to provide an hermetic-sealing package member including a substrate and at least one frame-like sealing material for defining a sealing region formed on the substrate, in which the sealing material is formed of a sintered body obtained by sintering at least one metal powder selected from gold, silver, palladium, or platinum having a purity of 99.9 wt % or greater and an average particle size of 0.005 ?m to 1.0 ?m, and with respect to an arbitrary cross-section toward an outside from the sealing region, a length of an upper end of the sealing material is shorter than a length of a lower end. Examples of a cross-sectional shape of the sealing material may include one formed to have a base portion having a certain height and at least one mountain portion protruding from the base portion or one formed to have a mountain portion having substantially a triangular shape in which the length of the lower end of the sealing material is a bottom.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention is to provide an hermetic-sealing package member including a substrate and at least one frame-like sealing material for defining a sealing region formed on the substrate, in which the sealing material is formed of a sintered body obtained by sintering at least one metal powder selected from gold, silver, palladium, or platinum having a purity of 99.9 wt % or greater and an average particle size of 0.005 ?m to 1.0 ?m, and with respect to an arbitrary cross-section toward an outside from the sealing region, a length of an upper end of the sealing material is shorter than a length of a lower end. Examples of a cross-sectional shape of the sealing material may include one formed to have a base portion having a certain height and at least one mountain portion protruding from the base portion or one formed to have a mountain portion having substantially a triangular shape in which the length of the lower end of the sealing material is a bottom.

Abstract: The present invention relates to a through electrode to be mounted on a substrate having a through hole. The through electrode includes: a penetrating part that passes through the through hole; a convex bump part that is formed on at least one end of the penetrating part and is wider than the through electrode; and a metal film that has at least one layer and is formed on a surface of the convex bump part that comes in contact with the substrate. The through electrode part and the convex bump part are formed of a sintered body prepared by sintering one or more kind of metal powder selected from gold, silver, palladium, and platinum having a purity of 99.9 wt % or more and an average particle size of 0.005 ?m to 1.0 ?m, and the metal film contains gold, silver, palladium, or platinum having a purity of 99.9 wt % or more.

Abstract: An electrode material capable of making more satisfactory the dispersion at the time of production and the aging property of a resonator than Au and capable of reducing the price as compared to Au. An resonator electrode material including a ternary alloy composed of Au and two metals M1 and M2, and being used as an excitation electrode to excite oscillation in a piezoelectric element, wherein the two metals M1 and M2 are, respectively, (a) metal M1: a metal exhibiting a tendency to decrease the temporal frequency property (?f1/f1) from the reference value f1, and (b) metal M2: a metal exhibiting a tendency to increase the temporal frequency property (?f1/f1) from the reference value f1. The metal M1 is preferably at least any one of Ag, Al and Ni, and the metal M2 is preferably at least any one of Pd, Ru, Pt, Ir, Rh and Cu.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.